专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050280457A1 High-speed current switch circuit 有权
公开(公告)号：US20050280457A1
公开(公告)日：2005-12-22
申请号：US11211944
申请日：2005-08-26
申请人： Yusuke Aiba , Masaki Ikeda , Takeshi Fujita , Hideaki Hirose , Akio Maruo
发明人： Yusuke Aiba , Masaki Ikeda , Takeshi Fujita , Hideaki Hirose , Akio Maruo
IPC分类号： H03K17/04 , G11B7/125 , H03K17/0412 , H03K17/687 , H03K5/12
CPC分类号： H03L7/02 , G11B7/126 , H03K17/04123
摘要： A high-speed current switch circuit of this invention has an n-type MOS transistor Q11 which switches and outputs a current, and a control circuit 11 which performs switching control of the MOS transistor Q11. In the control circuit 11, a source follower is formed by an N-type MOS transistor Q12 and a constant current source I2 which is a load on this transistor. A switch SW11 is connected to the MOS transistor Q12 to perform switching control of a current flowing through the MOS transistor Q12. The control circuit 11 includes a switch SW12 capable of grounding the gate of the MOS transistor 11. The source of the MOS transistor Q12 is connected to the gate of the MOS transistor Q11. Thus, even if a large current is caused to flow through the output transistor, the output transistor can be made to operate for switching at a high speed.

2. 发明授权

US06958631B2 High-speed current switch circuit 有权
标题翻译：高速电流开关电路
公开(公告)号：US06958631B2
公开(公告)日：2005-10-25
申请号：US10168572
申请日：2001-12-21
申请人： Yusuke Aiba , Masaki Ikeda , Takeshi Fujita , Hideaki Hirose , Akio Maruo
发明人： Yusuke Aiba , Masaki Ikeda , Takeshi Fujita , Hideaki Hirose , Akio Maruo
IPC分类号： H03K17/04 , G11B7/125 , H03K17/0412 , H03K17/687
CPC分类号： H03L7/02 , G11B7/126 , H03K17/04123
摘要： A high-speed current switch circuit of this invention has an n-type MOS transistor Q11 which switches and outputs a current, and a control circuit 11 which performs switching control of the MOS transistor Q11. In the control circuit 11, a source follower is formed by an N-type MOS transistor Q12 and a constant current source I2 which is a load on this transistor. A switch SW11 is connected to the MOS transistor Q12 to perform switching control of a current flowing through the MOS transistor Q12. The control circuit 11 includes a switch SW12 capable of grounding the gate of the MOS transistor 11. The source of the MOS transistor Q12 is connected to the gate of the MOS transistor Q11. Thus, even if a large current is caused to flow through the output transistor, the output transistor can be made to operate for switching at a high speed.
摘要翻译：本发明的高速电流开关电路具有切换并输出电流的n型MOS晶体管Q 11和执行MOS晶体管Q 11的开关控制的控制电路11。在控制电路11中，源极跟随器由N型MOS晶体管Q 12和作为该晶体管上的负载的恒流源I 2形成。开关SW 11连接到MOS晶体管Q 12，以对流过MOS晶体管Q12的电流进行开关控制。控制电路11包括能够使MOS晶体管11的栅极接地的开关SW 12。 MOS晶体管Q12的源极连接到MOS晶体管Q11的栅极。因此，即使使大电流流过输出晶体管，也可以使输出晶体管进行高速切换。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式