专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08030575B2 Mounting structure providing electrical surge protection 有权
标题翻译：安装结构提供电涌保护
公开(公告)号：US08030575B2
公开(公告)日：2011-10-04
申请号：US11465241
申请日：2006-08-17
申请人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Grigory Simin
发明人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Grigory Simin
IPC分类号： H05K1/03
CPC分类号： H01L23/62 , H01L25/167 , H01L33/62 , H01L2924/0002 , H01L2924/3011 , Y10T29/4913 , Y10T29/49169 , Y10T29/53174 , H01L2924/00
摘要： A solution for protecting an electronic device from an electrical surge using a mounting structure is provided. In particular, the mounting structure comprises a conductive material and is electrically connected to the protected electrical device. The conductive material and/or mounting structure can have one or more properties that prevent the mounting structure from adversely impacting operation of the electronic device during normal operation, but enables the mounting structure to provide an alternative electrical path during the electrical surge.
摘要翻译：提供了一种使用安装结构保护电子设备免受电涌的解决方案。特别地，安装结构包括导电材料并且电连接到受保护的电气设备。导电材料和/或安装结构可以具有防止安装结构在正常操作期间不利地影响电子设备的操作的一个或多个特性，但是使安装结构能够在电涌期间提供替代的电路径。

2. 发明申请

US20070151755A1 MOUNTING STRUCTURE PROVIDING ELECTRICAL SURGE PROTECTION 有权
标题翻译：提供电气防护的安装结构
公开(公告)号：US20070151755A1
公开(公告)日：2007-07-05
申请号：US11465241
申请日：2006-08-17
申请人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Grigory Simin
发明人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Grigory Simin
IPC分类号： H05K1/16 , H05K3/30
CPC分类号： H01L23/62 , H01L25/167 , H01L33/62 , H01L2924/0002 , H01L2924/3011 , Y10T29/4913 , Y10T29/49169 , Y10T29/53174 , H01L2924/00
摘要： A solution for protecting an electronic device from an electrical surge using a mounting structure is provided. In particular, the mounting structure comprises a conductive material and is electrically connected to the protected electrical device. The conductive material and/or mounting structure can have one or more properties that prevent the mounting structure from adversely impacting operation of the electronic device during normal operation, but enables the mounting structure to provide an alternative electrical path during the electrical surge.
摘要翻译：提供了一种使用安装结构保护电子设备免受电涌的解决方案。特别地，安装结构包括导电材料并且电连接到受保护的电气设备。导电材料和/或安装结构可以具有防止安装结构在正常操作期间不利地影响电子设备的操作的一个或多个特性，但是使安装结构能够在电涌期间提供替代的电路径。

3. 发明授权

US08846473B2 Low-resistance electrode design 有权
标题翻译：低电阻电极设计
公开(公告)号：US08846473B2
公开(公告)日：2014-09-30
申请号：US13458213
申请日：2012-04-27
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H01L21/336 , H01L29/417 , G06F17/50 , H01L23/482
CPC分类号： H01L29/41758 , G06F17/5068 , H01L23/4824 , H01L23/647 , H01L2924/0002 , H01L2924/00
摘要： A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.
摘要翻译：提供了一种用于设计半导体器件的方案，其中确定一对电极的两个或多个属性以例如使电极之间的电阻最小化。每个电极可以包括多个指状件延伸的电流馈送触点，其以交替模式与另一个电极的指状物交叉指向。属性可以包括每个手指的目标深度，每对相邻手指的目标有效宽度和/或当前馈送触点的一个或多个目标属性。随后，可以制造包括该器件的器件和/或电路。

4. 发明申请

US20120216161A1 Low-Resistance Electrode Design 有权
标题翻译：低电阻电极设计
公开(公告)号：US20120216161A1
公开(公告)日：2012-08-23
申请号：US13458213
申请日：2012-04-27
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： G06F17/50
CPC分类号： H01L29/41758 , G06F17/5068 , H01L23/4824 , H01L23/647 , H01L2924/0002 , H01L2924/00
摘要： A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.
摘要翻译：提供了一种用于设计半导体器件的方案，其中确定一对电极的两个或多个属性以例如使电极之间的电阻最小化。每个电极可以包括多个指状件延伸的电流馈送触点，其以交替模式与另一个电极的指状物交叉指向。属性可以包括每个手指的目标深度，每对相邻手指的目标有效宽度和/或当前馈送触点的一个或多个目标属性。随后，可以制造包括该器件的器件和/或电路。

5. 发明申请

US20080203430A1 ENHANCEMENT MODE INSULATED GATE HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR 有权
标题翻译：增强型绝缘栅结构场效应晶体管
公开(公告)号：US20080203430A1
公开(公告)日：2008-08-28
申请号：US11781338
申请日：2007-07-23
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/402
摘要： Aspects of the present invention provide an enhancement mode (E-mode) insulated gate (IG) double heterostructure field-effect transistor (DHFET) having low power consumption at zero gate bias, low gate currents, and/or high reliability. An E-mode HFET in accordance with an embodiment of the invention includes: top and bottom barrier layers; and a channel layer sandwiched between the bottom and the top barrier layers, wherein the bottom and top barrier layers have a larger bandgap than the channel layer, and wherein polarization charges of the bottom barrier layer deplete the channel layer and polarization charges of the top barrier layer induce carriers in the channel layer; and wherein a total polarization charge in the bottom barrier layer is larger than a total polarization charge in the top barrier layer such that the channel layer is substantially depleted at zero gate bias.
摘要翻译：本发明的方面提供了一种在零栅极偏压，低栅极电流和/或高可靠性下具有低功耗的增强模式（E模式）绝缘栅（IG）双异质结构场效应晶体管（DHFET）。根据本发明的实施例的E型HFET包括：顶部和底部阻挡层; 以及夹在底部和顶部阻挡层之间的沟道层，其中底部和顶部势垒层具有比沟道层更大的带隙，并且其中底部势垒层的极化电荷消耗沟道层和顶部势垒的极化电荷层在沟道层中诱导载流子; 并且其中底部阻挡层中的总极化电荷大于顶部势垒层中的总极化电荷，使得沟道层在零栅极偏压下基本上耗尽。

6. 发明授权

US07634996B2 Ultraviolet radiation sterilization 有权
标题翻译：紫外线辐射灭菌
公开(公告)号：US07634996B2
公开(公告)日：2009-12-22
申请号：US11674494
申请日：2007-02-13
申请人： Remigijus Gaska , Michael Shur , Yuriy Bilenko
发明人： Remigijus Gaska , Michael Shur , Yuriy Bilenko
IPC分类号： A61M16/00
CPC分类号： A61L2/10 , A61M16/04
摘要： A solution for sterilizing one or more hollow components of a device, such as a medical device, is provided. Ultraviolet radiation having one or more predominant wavelength(s) and a sufficient dose is generated and directed to an interior side of the hollow component(s). The predominant wavelength(s) is/are selected to harm one or more target organisms that may be present on the interior side. The ultraviolet radiation can be delivered by a structure that is periodically inserted and retracted into the hollow component. The structure can be configured to provide additional cleaning capability, such as suction, for removing matter that may be present in the hollow component.
摘要翻译：提供了用于对诸如医疗装置的装置的一个或多个中空部件进行灭菌的解决方案。产生具有一个或多个主要波长和足够剂量的紫外线辐射并将其引导到中空部件的内侧。选择主要波长以损害可能存在于内侧的一种或多种靶生物体。紫外线辐射可以通过周期性地插入和缩回到中空部件中的结构传送。该结构可以构造成提供额外的清洁能力，例如抽吸，用于去除可能存在于中空部件中的物质。

7. 发明申请

US20070205382A1 ORGANISM GROWTH SUPPRESSION USING ULTRAVIOLET RADIATION 有权
标题翻译：使用超紫外线辐射的有机生长抑制
公开(公告)号：US20070205382A1
公开(公告)日：2007-09-06
申请号：US11380512
申请日：2006-04-27
申请人： Remigijus Gaska , Yuriy Bilenko , Michael Shur
发明人： Remigijus Gaska , Yuriy Bilenko , Michael Shur
IPC分类号： A61L2/10 , A61L9/20
CPC分类号： A61L2/10 , A61L2/23
摘要： A solution for suppressing organism growth using ultraviolet radiation generated by solid state ultraviolet radiation emitters, such as ultraviolet diodes is provided. The invention includes a connection structure that includes a plurality of solid state ultraviolet radiation emitters disposed thereon. Each of the plurality of solid state ultraviolet radiation emitters emits ultraviolet radiation having a wavelength less than or equal to four hundred nanometers to harm a target organism that may be present on a surface. In one embodiment, the connection structure comprises a two-dimensional mesh that may be placed adjacent an air filter, incorporated in a cover, and/or moved with respect to a surface, such as the interior of an air duct. In this manner, the invention can suppress and/or prevent the growth of organisms, such as biofilms and mold, in locations that are susceptible to such growth.
摘要翻译：提供了一种使用紫外线二极管等固体紫外线辐射发射体产生的紫外线照射来抑制生物生长的方法。本发明包括一种连接结构，其包括设置在其上的多个固态紫外线辐射发射器。多个固态紫外线辐射发射体中的每一个发射波长小于或等于四百纳米的紫外线辐射，以损害可能存在于表面上的靶生物体。在一个实施例中，连接结构包括二维网格，其可以放置在与空气过滤器相邻的地方，并入和/或相对于诸如空气管道的内部的表面移动。以这种方式，本发明可以抑制和/或防止生物体如生物膜和霉菌在易受这种生长影响的位置中的生长。

8. 发明授权

US08395324B2 Light emitting system with dual use light element 有权
标题翻译：具有双重使用光源的发光系统
公开(公告)号：US08395324B2
公开(公告)日：2013-03-12
申请号：US12763674
申请日：2010-04-20
申请人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Alexei Koudymov
发明人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Alexei Koudymov
IPC分类号： H05B37/02
CPC分类号： H05B33/0863 , H05B33/0866
摘要： A solution is provided in which one or more of a plurality of light elements is alternately operated as a light emitting element and a light detecting element. For example, a system can operate a light element as a light detecting element while operating at least one other light element as a light emitting element in order to manage operation of the light elements to generate light having a set of desired attributes, evaluating an operating condition of the other light element(s), and/or the like.
摘要翻译：提供了一种解决方案，其中多个光元件中的一个或多个交替地作为发光元件和光检测元件操作。例如，系统可以操作作为光检测元件的光元件，同时操作至少一个其它光元件作为发光元件，以便管理光元件的操作以产生具有一组所需属性的光，评估操作另一个光元件的状态和/或类似物。

9. 发明申请

US20050110053A1 Semiconductor sensing device 有权
标题翻译：半导体感测装置
公开(公告)号：US20050110053A1
公开(公告)日：2005-05-26
申请号：US10721803
申请日：2003-11-25
申请人： Michael Shur , Remigijus Gaska , Yuriy Bilenko
发明人： Michael Shur , Remigijus Gaska , Yuriy Bilenko
IPC分类号： G01N27/26 , G01N27/414 , H01L21/00 , H01L23/58
CPC分类号： G01N27/414 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like.
摘要翻译：一种半导体感测装置，其中感测层暴露于在接触件下方和/或邻近的区域内被测试的介质。在一个实施例中，该器件包括场效应晶体管，其中感测层设置在栅极触点下方。感测层通过包括在栅极接触中的一个或多个穿孔和/或设置在感测层上方的一个或多个层而暴露于介质。感测层可以包括电介质层，半导体层等。

10. 发明授权

US08981417B2 Shaped contact layer for light emitting heterostructure 有权
标题翻译：用于发光异质结构的成形接触层
公开(公告)号：US08981417B2
公开(公告)日：2015-03-17
申请号：US13048233
申请日：2011-03-15
申请人： Yuriy Bilenko , Remigijus Gaska , Michael Shur
发明人： Yuriy Bilenko , Remigijus Gaska , Michael Shur
IPC分类号： H01L33/32 , H01L33/38 , H01S5/042
CPC分类号： H01L33/38 , H01S5/0425
摘要： An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.
摘要翻译：提供了一种改进的发光异质结构和/或器件，其包括具有接触形状的接触层，接触形状包括具有至少三阶对称轴或H形的三叶形。使用这些形状可以为发光器件提供一个或多个改进的操作特性。接触形状可以例如使用发射具有以下蓝色光谱或深紫外（UV）光谱中的至少一个的波长的光的氮化物基器件上的接触层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式