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1. 发明申请

US20100117764A1 Assisted selective growth of highly dense and vertically aligned carbon nanotubes 审中-公开
标题翻译：辅助选择生长高密度和垂直排列的碳纳米管
公开(公告)号：US20100117764A1
公开(公告)日：2010-05-13
申请号：US11405657
申请日：2006-04-17
申请人： Yunyu Wang , Paul S. Ho , Li Shi , Zhen Yao
发明人： Yunyu Wang , Paul S. Ho , Li Shi , Zhen Yao
IPC分类号： H01P1/20 , C23C16/26 , C03C17/38
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/08 , Y10T428/12625
摘要： The selective growth of vertically aligned, highly dense carbon nanotube (CNT) arrays using a thermal catalytic chemical vapor deposition (CCVD) method via selection of the supporting layer where the thin catalyst layer is deposited on. A thin iron (Fe) catalyst deposited on a supporting layer of tantalum (Ta) yielded CCVD growth of the vertical dense CNT arrays. Cross-sectional transmission electron microscopy revealed a Vollmer-Weber mode of Fe island growth on Ta, with a small contact angle of the islands controlled by the relative surface energies of the supporting layer, the catalyst and their interface. The as-formed Fe island morphology promoted surface diffusion of carbon atoms seeding the growth of the CNTs from the catalyst surface.
摘要翻译：通过选择沉积薄催化剂层的支撑层，使用热催化化学气相沉积（CCVD）方法选择性地生长垂直取向的高密度碳纳米管（CNT）阵列。沉积在钽（Ta）的支撑层上的薄铁（Fe）催化剂产生垂直致密CNT阵列的CCVD生长。横截面透射电子显微镜显示在Ta上的Fe岛生长的Vollmer-Weber模式，岛的小接触角由支撑层，催化剂及其界面的相对表面能控制。形成的Fe岛形态促进碳原子的表面扩散，从催化剂表面接种CNT的生长。

2. 发明申请

US20130045605A1 DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS 审中-公开
标题翻译：含氮和含氮薄膜的干燥剂
公开(公告)号：US20130045605A1
公开(公告)日：2013-02-21
申请号：US13448541
申请日：2012-04-17
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

3. 发明申请

US20130034968A1 DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS 有权
标题翻译：含硅和碳膜的干燥剂
公开(公告)号：US20130034968A1
公开(公告)日：2013-02-07
申请号：US13279998
申请日：2011-10-24
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

4. 发明授权

US08679983B2 Selective suppression of dry-etch rate of materials containing both silicon and nitrogen 失效
标题翻译：选择性抑制含有硅和氮的材料的干蚀刻速率
公开(公告)号：US08679983B2
公开(公告)日：2014-03-25
申请号：US13449441
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

5. 发明授权

US08679982B2 Selective suppression of dry-etch rate of materials containing both silicon and oxygen 有权
标题翻译：选择性抑制含有硅和氧的材料的干蚀刻速率
公开(公告)号：US08679982B2
公开(公告)日：2014-03-25
申请号：US13449543
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

6. 发明授权

US08771536B2 Dry-etch for silicon-and-carbon-containing films 有权
标题翻译：用于含硅和碳的膜的干蚀刻
公开(公告)号：US08771536B2
公开(公告)日：2014-07-08
申请号：US13279998
申请日：2011-10-24
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

7. 发明申请

US20130052827A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 有权
标题翻译：选择性抑制含有硅和氧的材料的干蚀速率
公开(公告)号：US20130052827A1
公开(公告)日：2013-02-28
申请号：US13449543
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/308
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

8. 发明申请

US20130059440A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 失效
标题翻译：选择性抑制含有硅和氮的材料的干燥速率
公开(公告)号：US20130059440A1
公开(公告)日：2013-03-07
申请号：US13449441
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

9. 发明申请

US20050196917A1 Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors 审中-公开
标题翻译：用于形成用于高介电常数电容器的（111）取向的BSTO薄膜层的方法
公开(公告)号：US20050196917A1
公开(公告)日：2005-09-08
申请号：US10790786
申请日：2004-03-03
申请人： Jingyu Lian , David Kotecki , Hua Shen , Robert Laibowitz , Katherine Saenger , Chenting Lin , Nicolas Nagel , Yunyu Wang , Satish Athavale , Thomas Shaw
发明人： Jingyu Lian , David Kotecki , Hua Shen , Robert Laibowitz , Katherine Saenger , Chenting Lin , Nicolas Nagel , Yunyu Wang , Satish Athavale , Thomas Shaw
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L27/10852
摘要： A method for forming high capacitance crystalline dielectric layers with (111) texture is disclosed. In an exemplary embodiment, deposition of a plurality of nuclei is performed at a temperature in the range of about 430 to 460 degrees Celsius, followed by growth of a continuous BSTO dielectric layer at a temperature greater than 600 degrees Celsius. In an exemplary embodiment, a process is disclosed for growing a barium strontium titanium oxide film with high capacitance and thickness of about 30 nm or less.
摘要翻译：公开了一种形成具有（111）结构的高电容结晶介电层的方法。在一个示例性实施例中，多个核的沉积在约430至460摄氏度范围内的温度下进行，随后在大于600摄氏度的温度下生长连续的BSTO介电层。在示例性实施例中，公开了用于生长具有约30nm或更小的高电容和厚度的钡锶氧化钛膜的方法。

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