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    • 4. 发明授权
    • Thin film transistor
    • 薄膜晶体管
    • US09112042B2
    • 2015-08-18
    • US13611279
    • 2012-09-12
    • Wei-Chou LanTed-Hong ShinnHenry WangChia-Chun Yeh
    • Wei-Chou LanTed-Hong ShinnHenry WangChia-Chun Yeh
    • H01L29/786H01L29/49
    • H01L29/78696H01L29/4908
    • A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.
    • 提供了适合于设置在基板上的薄膜晶体管。 薄膜晶体管包括栅电极,有机栅介质层,金属氧化物半导体层,源电极和漏电极。 栅电极设置在基板上。 有机栅极介电层设置在基板上以覆盖栅电极。 源电极,漏电极和金属氧化物半导体层设置在有机栅极电介质层的上方,金属氧化物半导体层与源电极和漏电极接触。 由于薄膜晶体管的沟道层是在较低温度下形成的金属氧化物半导体层,因此薄膜晶体管可以广泛地应用于诸如柔性显示器件的各种显示应用中。