会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Thin-film transistor (TFT) for driving organic light-emitting diode (OLED) and method for manufacturing the same
    • US20060292757A1
    • 2006-12-28
    • US11201150
    • 2005-08-11
    • Yung-Fu WuYu-Jung LiuYung-Hui Yeh
    • Yung-Fu WuYu-Jung LiuYung-Hui Yeh
    • H01L21/84
    • H01L27/1288H01L27/1214H01L27/1218H01L27/322
    • A thin-film transistor (TFT) and a method for manufacturing the thin-film transistor using a color filter as a dielectric layer so as to drive an organic light-emitting diode. The thin-film transistor comprises: a substrate; a first poly-silicon mesa formed on the substrate; an insulating layer formed on the substrate and covering the first poly-silicon mesa; a gate metal layer formed on the insulating layer; a color-filtering dielectric layer formed on the insulating layer and covering the gate metal layer, the dielectric layer being provided with a plurality of contact holes penetrating through the dielectric layer and the insulating layer; and a conductive layer formed on the dielectric layer and coupled to the first poly-silicon mesa through the contact holes. The method comprises steps of: providing a substrate; forming a first poly-silicon mesa and a second poly-silicon mesa on the substrate; doping the first poly-silicon mesa with an n-type dopant using ion implantation; forming an insulating layer on the substrate, the insulating layer covering the first poly-silicon mesa and the second poly-silicon mesa; forming a gate metal layer on the insulating layer corresponding to the first poly-silicon mesa and the second poly-silicon mesa; doping the first poly-silicon mesa with an n-type dopant using ion implantation; doping the second poly-silicon mesa with a p-type dopant using ion implantation; forming a dielectric layer capable of color filtering on the insulating layer, the dielectric layer covering the gate metal layer; forming a plurality of contact holes in the dielectric layer, the plurality of contact holes penetrating the dielectric layer and the insulating layer so as to contact the first poly-silicon mesa and the second poly-silicon mesa; forming a conductive layer on the dielectric layer; and etching the conductive layer.