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1. 发明授权

US07821039B2 Layout architecture for improving circuit performance 有权
标题翻译：用于提高电路性能的布局架构
公开(公告)号：US07821039B2
公开(公告)日：2010-10-26
申请号：US12193354
申请日：2008-08-18
申请人： Li-Chun Tien , Lee-Chung Lu , Yung-Chin Hou , Chun-Hui Tai , Ta-Pen Guo , Sheng-Hsin Chen , Ping Chung Li
发明人： Li-Chun Tien , Lee-Chung Lu , Yung-Chin Hou , Chun-Hui Tai , Ta-Pen Guo , Sheng-Hsin Chen , Ping Chung Li
IPC分类号： H01L27/10 , H01L23/62 , H01L29/76 , H01L29/94 , H01L29/00
CPC分类号： H01L27/092 , H01L27/0207
摘要： An integrated circuit structure includes an integrated circuit structure including a PMOS transistor including a first gate electrode; a first source region; and a first drain region; an NMOS transistor including a second gate electrode, wherein the first gate electrode and the second gate electrode are portions of a gate electrode strip; a second source region; and a second drain region. No additional transistors are formed between the PMOS transistor and the NMOS transistor. The integrated circuit further includes a VDD power rail connected to the first source region; a VSS power rail connected to the second source region; and an interconnection port electrically connected to the gate electrode strip. The interconnection port is on an outer side of a MOS pair region including the PMOS transistor, the NMOS transistor, and the region between the PMOS transistor and the NMOS transistor. The portion of the gate electrode strip in the MOS pair region is substantially straight.
摘要翻译：集成电路结构包括集成电路结构，其包括：包括第一栅电极的PMOS晶体管; 第一源区; 和第一漏区; 包括第二栅电极的NMOS晶体管，其中所述第一栅电极和所述第二栅电极是栅电极条的部分; 第二源区; 和第二漏区。在PMOS晶体管和NMOS晶体管之间不会形成附加的晶体管。集成电路还包括连接到第一源极区的VDD电源轨; 连接到第二源区的VSS电力轨; 以及电连接到栅电极条的互连端口。互连端口位于包括PMOS晶体管，NMOS晶体管以及PMOS晶体管和NMOS晶体管之间的区域的MOS对区域的外侧。 MOS对区域中的栅电极条的部分基本上是直的。

2. 发明申请

US20090315079A1 Layout Architecture for Improving Circuit Performance 有权
标题翻译：用于提高电路性能的布局架构
公开(公告)号：US20090315079A1
公开(公告)日：2009-12-24
申请号：US12193354
申请日：2008-08-18
申请人： Li-Chun Tien , Lee-Chung Lu , Yung-Chin Hou , Chun-Hui Tai , Ta-Pen Guo , Sheng-Hsin Chen , Ping Chung Li
发明人： Li-Chun Tien , Lee-Chung Lu , Yung-Chin Hou , Chun-Hui Tai , Ta-Pen Guo , Sheng-Hsin Chen , Ping Chung Li
IPC分类号： H01L21/8238
CPC分类号： H01L27/092 , H01L27/0207
摘要： An integrated circuit structure includes an integrated circuit structure including a PMOS transistor including a first gate electrode; a first source region; and a first drain region; an NMOS transistor including a second gate electrode, wherein the first gate electrode and the second gate electrode are portions of a gate electrode strip; a second source region; and a second drain region. No additional transistors are formed between the PMOS transistor and the NMOS transistor. The integrated circuit further includes a VDD power rail connected to the first source region; a VSS power rail connected to the second source region; and an interconnection port electrically connected to the gate electrode strip. The interconnection port is on an outer side of a MOS pair region including the PMOS transistor, the NMOS transistor, and the region between the PMOS transistor and the NMOS transistor. The portion of the gate electrode strip in the MOS pair region is substantially straight.
摘要翻译：集成电路结构包括集成电路结构，其包括：包括第一栅电极的PMOS晶体管; 第一源区; 和第一漏区; 包括第二栅电极的NMOS晶体管，其中所述第一栅电极和所述第二栅电极是栅电极条的部分; 第二源区; 和第二漏区。在PMOS晶体管和NMOS晶体管之间不会形成附加的晶体管。集成电路还包括连接到第一源极区的VDD电源轨; 连接到第二源区的VSS电力轨; 以及电连接到栅电极条的互连端口。互连端口位于包括PMOS晶体管，NMOS晶体管以及PMOS晶体管和NMOS晶体管之间的区域的MOS对区域的外侧。 MOS对区域中的栅电极条的部分基本上是直的。

3. 发明授权

US07808051B2 Standard cell without OD space effect in Y-direction 有权
标题翻译：标准电池在Y方向没有OD空间效应
公开(公告)号：US07808051B2
公开(公告)日：2010-10-05
申请号：US12345372
申请日：2008-12-29
申请人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
发明人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
IPC分类号： H01L29/76
CPC分类号： H01L27/0207 , H01L27/11807
摘要： An integrated circuit structure includes a semiconductor substrate; a first active region in the semiconductor substrate; and a second active region in the semiconductor substrate and of an opposite conductivity type than the first active region. A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively. A first spacer bar is in the semiconductor substrate and connected to the first active region. At least a portion of the first spacer bar is adjacent to and spaced apart from a portion of the first active region. A second spacer bar is in the semiconductor substrate and connected to the second active region. At least a portion of the second spacer bar is adjacent to and spaced apart from a portion of the second active region.
摘要翻译：集成电路结构包括半导体衬底; 半导体衬底中的第一有源区; 以及在所述半导体衬底中并且具有与所述第一有源区相反的导电类型的第二有源区。栅电极条在第一和第二有源区之上，分别形成具有第一有源区和第二有源区的第一MOS器件和第二MOS器件。第一间隔棒位于半导体衬底中并与第一有源区连接。第一间隔条的至少一部分与第一有源区的一部分相邻并间隔开。第二间隔杆位于半导体衬底中并连接到第二有源区。第二间隔杆的至少一部分与第二有源区的一部分相邻并间隔开。

4. 发明申请

US20100164614A1 Structure and System of Mixing Poly Pitch Cell Design under Default Poly Pitch Design Rules 有权
标题翻译：混合多节距单元设计在默认多点设计规则下的结构和系统
公开(公告)号：US20100164614A1
公开(公告)日：2010-07-01
申请号：US12347628
申请日：2008-12-31
申请人： Yung-Chin Hou , Li-Chun Tien , Lee-Chung Lu , Ping Chung Li , Ta-Pen Guo
发明人： Yung-Chin Hou , Li-Chun Tien , Lee-Chung Lu , Ping Chung Li , Ta-Pen Guo
IPC分类号： H01L25/00
CPC分类号： G06F17/5072 , H01L27/0207 , H01L27/11803
摘要： An integrated circuit including type-1 cells and a type-2 cell is presented. The type-1 cells have poly lines with a default poly pitch. The type-2 cell has poly lines with a non-default poly pitch. A first boundary region has at least one isolation area that lies between the type-1 cells and the type-2 cell in the X-direction. The first boundary region includes at least one merged dummy poly line, wherein the at least one merged dummy poly line has a first portion that complies with the default poly pitch of the type-1 cells and a second portion that complies with the non-default poly pitch of the type-2 cell.
摘要翻译：提出了包括1型电池和2型电池的集成电路。 1型电池具有默认聚间距的多线。 2型电池具有具有非默认聚间距的多线。第一边界区域具有位于X方向上的类型1单元和类型2单元之间的至少一个隔离区域。第一边界区域包括至少一个合并的虚拟多线，其中所述至少一个合并虚拟多线具有符合类型-1单元的默认多音调的第一部分和符合非默认的第二部分 2型细胞的聚间距。

5. 发明授权

US07932566B2 Structure and system of mixing poly pitch cell design under default poly pitch design rules 有权
标题翻译：在默认聚沥青设计规则下混合聚沥青单元设计的结构和系统
公开(公告)号：US07932566B2
公开(公告)日：2011-04-26
申请号：US12347628
申请日：2008-12-31
申请人： Yung-Chin Hou , Li-Chun Tien , Lee-Chung Lu , Ping Chung Li , Ta-Pen Guo
发明人： Yung-Chin Hou , Li-Chun Tien , Lee-Chung Lu , Ping Chung Li , Ta-Pen Guo
IPC分类号： H01L25/00
CPC分类号： G06F17/5072 , H01L27/0207 , H01L27/11803
摘要： An integrated circuit including type-1 cells and a type-2 cell is presented. The type-1 cells have poly lines with a default poly pitch. The type-2 cell has poly lines with a non-default poly pitch. A first boundary region has at least one isolation area that lies between the type-1 cells and the type-2 cell in the X-direction. The first boundary region includes at least one merged dummy poly line, wherein the at least one merged dummy poly line has a first portion that complies with the default poly pitch of the type-1 cells and a second portion that complies with the non-default poly pitch of the type-2 cell.
摘要翻译：提出了包括1型电池和2型电池的集成电路。 1型电池具有默认聚间距的多线。 2型电池具有具有非默认聚间距的多线。第一边界区域具有位于X方向上的类型1单元和类型2单元之间的至少一个隔离区域。第一边界区域包括至少一个合并的虚拟多线，其中所述至少一个合并虚拟多线具有符合类型-1单元的默认多音调的第一部分和符合非默认的第二部分 2型细胞的聚间距。

6. 发明申请

US20100078725A1 Standard Cell without OD Space Effect in Y-Direction 有权
标题翻译：标准电池在Y方向没有OD空间效应
公开(公告)号：US20100078725A1
公开(公告)日：2010-04-01
申请号：US12345372
申请日：2008-12-29
申请人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
发明人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
IPC分类号： H01L27/088 , H01L29/06
CPC分类号： H01L27/0207 , H01L27/11807
摘要： An integrated circuit structure includes a semiconductor substrate; a first active region in the semiconductor substrate; and a second active region in the semiconductor substrate and of an opposite conductivity type than the first active region. A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively. A first spacer bar is in the semiconductor substrate and connected to the first active region. At least a portion of the first spacer bar is adjacent to and spaced apart from a portion of the first active region. A second spacer bar is in the semiconductor substrate and connected to the second active region. At least a portion of the second spacer bar is adjacent to and spaced apart from a portion of the second active region.
摘要翻译：集成电路结构包括半导体衬底; 半导体衬底中的第一有源区; 以及在所述半导体衬底中并且具有与所述第一有源区相反的导电类型的第二有源区。栅电极条在第一和第二有源区之上，分别形成具有第一有源区和第二有源区的第一MOS器件和第二MOS器件。第一间隔棒位于半导体衬底中并与第一有源区连接。第一间隔条的至少一部分与第一有源区的一部分相邻并间隔开。第二间隔杆位于半导体衬底中并连接到第二有源区。第二间隔杆的至少一部分与第二有源区的一部分相邻并间隔开。

7. 发明申请

US20100281446A1 Integrated Circuit Design using DFM-Enhanced Architecture 有权
标题翻译：使用DFM增强架构的集成电路设计
公开(公告)号：US20100281446A1
公开(公告)日：2010-11-04
申请号：US12708242
申请日：2010-02-18
申请人： Yung-Chin Hou , Lee-Chung Lu , Li-Chun Tien , Yi-Kan Cheng , Chun-Hui Tai , Ta-Pen Guo , Yuan-Te Hou
发明人： Yung-Chin Hou , Lee-Chung Lu , Li-Chun Tien , Yi-Kan Cheng , Chun-Hui Tai , Ta-Pen Guo , Yuan-Te Hou
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： Integrated circuit libraries include a first standard cell having a first left boundary and a first right boundary, and a second standard cell having a second left boundary and a second right boundary. The first standard cell and the second standard cell are of a same cell variant. A first active region in the first standard cell has a different length of diffusion than a second active region in the second standard cell. The first active region and the second active region are corresponding active regions represented by a same component of a same circuit diagram representing both the first standard cell and the second standard cell.
摘要翻译：集成电路库包括具有第一左边界和第一右边界的第一标准单元，以及具有第二左边界和第二右边界的第二标准单元。第一标准细胞和第二标准细胞具有相同的细胞变体。第一标准单元中的第一有源区具有与第二标准单元中的第二有源区不同的扩散长度。第一有源区和第二有源区是由表示第一标准单元和第二标准单元的相同电路图的相同分量表示的相应有源区。

8. 发明授权

US09312260B2 Integrated circuits and manufacturing methods thereof 有权
标题翻译：集成电路及其制造方法
公开(公告)号：US09312260B2
公开(公告)日：2016-04-12
申请号：US13086186
申请日：2011-04-13
申请人： Ali Keshavarzi , Ta-Pen Guo , Helen Shu-Hui Chang , Hsiang-Jen Tseng , Shyue-Shyh Lin , Lee-Chung Lu , Chung-Cheng Wu , Li-Chun Tien , Jung-Chan Yang , Shu-Min Chen , Min Cao , Yung-Chin Hou
发明人： Ali Keshavarzi , Ta-Pen Guo , Helen Shu-Hui Chang , Hsiang-Jen Tseng , Shyue-Shyh Lin , Lee-Chung Lu , Chung-Cheng Wu , Li-Chun Tien , Jung-Chan Yang , Shu-Min Chen , Min Cao , Yung-Chin Hou
IPC分类号： H01L29/76 , H01L27/092 , H01L21/8238 , H01L23/485 , H01L27/02 , H01L29/423 , H01L29/66 , H01L29/78
CPC分类号： H01L27/092 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L29/0649 , H01L29/4238 , H01L29/495 , H01L29/66545 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.
摘要翻译：集成电路包括用于第一类型晶体管的第一扩散区域。第一类型晶体管包括第一漏极区域和第一源极区域。用于第二类型晶体管的第二扩散区域与第一扩散区域分离。第二类型晶体管包括第二漏极区域和第二源极区域。栅电极在布线方向上连续延伸穿过第一扩散区域和第二扩散区域。第一金属结构与第一源区电耦合。第二金属结构与第二漏区电耦合。第三金属结构设置在第一和第二金属结构之上并与第一和第二金属结构电耦合。第一金属结构体的宽度基本上等于或大于第三金属结构体的宽度。

9. 发明申请

US20100127333A1 NOVEL LAYOUT ARCHITECTURE FOR PERFORMANCE ENHANCEMENT 审中-公开
标题翻译：性能增强的新型布局架构
公开(公告)号：US20100127333A1
公开(公告)日：2010-05-27
申请号：US12276172
申请日：2008-11-21
申请人： Yung-Chin Hou , Ta-Pen Guo , Harry Chuang , Carlos H. Diaz , Lee-Chung Lu , Li-Chun Tien , Oscar M. K. Law , Chih-Chiang Chang , Chun-Hui Tai , Jonathan Lee
发明人： Yung-Chin Hou , Ta-Pen Guo , Harry Chuang , Carlos H. Diaz , Lee-Chung Lu , Li-Chun Tien , Oscar M. K. Law , Chih-Chiang Chang , Chun-Hui Tai , Jonathan Lee
IPC分类号： H01L27/092 , H01L27/088
CPC分类号： H01L27/0207 , H01L21/823418 , H01L21/823481
摘要： The present disclosure provides an integrated circuit. The integrated circuit includes an active region in a semiconductor substrate; a first field effect transistor (FET) disposed in the active region; and an isolation structure disposed in the active region. The FET includes a first gate; a first source formed in the active region and disposed on a first region adjacent the first gate from a first side; and a first drain formed in the active region and disposed on a second region adjacent the first gate from a second side. The isolation structure includes an isolation gate disposed adjacent the first drain; and an isolation source formed in the active region and disposed adjacent the isolation gate such that the isolation source and the first drain are on different sides of the isolation gate.
摘要翻译：本发明提供集成电路。集成电路包括半导体衬底中的有源区; 设置在有源区中的第一场效应晶体管（FET）以及设置在有源区域中的隔离结构。 FET包括第一栅极; 形成在所述有源区中并且从第一侧设置在与所述第一栅极相邻的第一区域上的第一源极; 以及形成在所述有源区中并且从第二侧设置在与所述第一栅极相邻的第二区域上的第一漏极。隔离结构包括邻近第一漏极设置的隔离栅极; 以及隔离源，形成在所述有源区中并邻近所述隔离栅设置，使得所述隔离源和所述第一漏极位于所述隔离栅极的不同侧上。

10. 发明授权

US08631366B2 Integrated circuit design using DFM-enhanced architecture 有权
标题翻译：采用DFM增强架构的集成电路设计
公开(公告)号：US08631366B2
公开(公告)日：2014-01-14
申请号：US12708242
申请日：2010-02-18
申请人： Yung-Chin Hou , Lee-Chung Lu , Li-Chun Tien , Yi-Kan Cheng , Chun-Hui Tai , Ta-Pen Guo , Yuan-Te Hou
发明人： Yung-Chin Hou , Lee-Chung Lu , Li-Chun Tien , Yi-Kan Cheng , Chun-Hui Tai , Ta-Pen Guo , Yuan-Te Hou
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： Integrated circuit libraries include a first standard cell having a first left boundary and a first right boundary, and a second standard cell having a second left boundary and a second right boundary. The first standard cell and the second standard cell are of a same cell variant. A first active region in the first standard cell has a different length of diffusion than a second active region in the second standard cell. The first active region and the second active region are corresponding active regions represented by a same component of a same circuit diagram representing both the first standard cell and the second standard cell.
摘要翻译：集成电路库包括具有第一左边界和第一右边界的第一标准单元，以及具有第二左边界和第二右边界的第二标准单元。第一标准细胞和第二标准细胞具有相同的细胞变体。第一标准单元中的第一有源区具有与第二标准单元中的第二有源区不同的扩散长度。第一有源区和第二有源区是由表示第一标准单元和第二标准单元的相同电路图的相同分量表示的相应有源区。

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