专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050156258A1 Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed of the same, and methods of manufacturing the semiconductor device and the semiconductor memory device 审中-公开
标题翻译：形成具有优异热稳定性的硅化物膜的方法，半导体器件和包含由其形成的硅化物膜的半导体存储器件以及制造半导体器件和半导体存储器件的方法
公开(公告)号：US20050156258A1
公开(公告)日：2005-07-21
申请号：US11000392
申请日：2004-12-01
申请人： Yun-chang Park , Chel-jong Choi
发明人： Yun-chang Park , Chel-jong Choi
IPC分类号： H01L21/28 , C30B1/02 , C30B29/52 , H01L21/24 , H01L21/285 , H01L21/336 , H01L21/768 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/105 , H01L27/108 , H01L29/417 , H01L29/78 , H01L43/08 , H01L21/00 , C30B1/00 , H01L31/113
CPC分类号： C30B29/52 , C30B1/02 , H01L21/28518 , H01L21/76849 , H01L21/76889 , H01L29/665 , H01L2924/0002 , H01L2924/00
摘要： Provided are a method of forming a silicide film having excellent thermal stability, a semiconductor device and a semiconductor memory device comprising the silicide film formed using the same, and methods of manufacturing the semiconductor device and the semiconductor memory device. A method of forming a nickel mono silicide film including germanium includes sequentially forming a germanium film and a nickel film on a substrate containing silicon and annealing the product. A semiconductor device comprising the nickel mono silicide film, a semiconductor memory device comprising the nickel mono silicide film, and methods of manufacturing the semiconductor device and the semiconductor memory device.
摘要翻译：提供一种形成具有优异的热稳定性的硅化物膜的方法，半导体器件和包括使用其形成的硅化物膜的半导体存储器件，以及制造半导体器件和半导体存储器件的方法。包括锗的单一硅化镍膜的形成方法包括在含有硅的衬底上顺序地形成锗膜和镍膜并退火产物。包括镍单硅化物膜的半导体器件，包括镍单硅化物膜的半导体存储器件以及半导体器件和半导体存储器件的制造方法。

2. 发明授权

US07449402B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07449402B2
公开(公告)日：2008-11-11
申请号：US11336802
申请日：2006-01-23
申请人： Soo-bong Heo , Chel-jong Choi
发明人： Soo-bong Heo , Chel-jong Choi
IPC分类号： H01L21/336
CPC分类号： H01L21/02675 , H01L21/0237 , H01L21/02387 , H01L21/02488 , H01L21/02686 , H01L21/2026 , H01L21/28035 , H01L29/4916 , H01L29/665 , H01L29/66575
摘要： Provided is a method of fabricating a semiconductor device, the method including: forming an insulating layer on a single crystal substrate; etching the insulating layer in a predetermined pattern to expose the surface of the single crystal substrate; depositing an amorphous material on the insulating layer and the exposed surface of the single crystal substrate; and completely melting the amorphous material on the single crystal substrate and the insulating layer using laser annealing and crystallizing the melted amorphous material. The semiconductor device has a single crystalline silicon gate on the insulating layer.
摘要翻译：提供一种制造半导体器件的方法，所述方法包括：在单晶衬底上形成绝缘层; 以预定图案蚀刻绝缘层以暴露单晶衬底的表面; 在绝缘层和单晶衬底的暴露表面上沉积非晶材料; 并使用激光退火并使熔融的无定形材料结晶，使单晶衬底和绝缘层上的非晶材料完全熔化。半导体器件在绝缘层上具有单晶硅栅极。

3. 发明申请

US20060166418A1 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060166418A1
公开(公告)日：2006-07-27
申请号：US11336802
申请日：2006-01-23
申请人： Soo-bong Heo , Chel-jong Choi
发明人： Soo-bong Heo , Chel-jong Choi
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02675 , H01L21/0237 , H01L21/02387 , H01L21/02488 , H01L21/02686 , H01L21/2026 , H01L21/28035 , H01L29/4916 , H01L29/665 , H01L29/66575
摘要： Provided is a method of fabricating a semiconductor device, the method including: forming an insulating layer on a single crystal substrate; etching the insulating layer in a predetermined pattern to expose the surface of the single crystal substrate; depositing an amorphous material on the insulating layer and the exposed surface of the single crystal substrate; and completely melting the amorphous material on the single crystal substrate and the insulating layer using laser annealing and crystallizing the melted amorphous material. The semiconductor device has a single crystalline silicon gate on the insulating layer.
摘要翻译：提供一种制造半导体器件的方法，所述方法包括：在单晶衬底上形成绝缘层; 以预定图案蚀刻绝缘层以暴露单晶衬底的表面; 在绝缘层和单晶衬底的暴露表面上沉积非晶材料; 并使用激光退火并使熔融的无定形材料结晶，使单晶衬底和绝缘层上的非晶材料完全熔化。半导体器件在绝缘层上具有单晶硅栅极。

4. 发明授权

US07279422B2 Semiconductor device with silicide film and method of manufacturing the same 有权
标题翻译：具有硅化物膜的半导体器件及其制造方法
公开(公告)号：US07279422B2
公开(公告)日：2007-10-09
申请号：US10915381
申请日：2004-08-11
申请人： Chel-jong Choi
发明人： Chel-jong Choi
IPC分类号： H01L21/44
CPC分类号： H01L21/265 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： Provided is a semiconductor device having a suicide thin film with thermal stability and a method of manufacturing the same. The semiconductor device includes a silicon substrate containing Si a gate oxide film formed on the silicon substrate, a gate electrode containing Si formed on the gate oxide film, a spacer formed on side walls of the gate oxide film and the gate electrode, a LDD region formed in the silicon substrate under the spacer, a source/drain region formed in the silicon substrate, a NiSi thin film formed on the source/drain region and the gate electrode by reacting a Ni film with the source/drain region and the gate electrode; and a nitride film formed on the NiSi thin film formed by surface treating the nickel film using Ar plasma and reacting the Ni film with nitrogen. The, a semiconductor device having the NiSi thin film has a low sheet resistance and high thermal stability can be obtained.
摘要翻译：提供了具有热稳定性的硅化物薄膜的半导体器件及其制造方法。半导体器件包括硅基板，其含有形成在硅基板上的栅极氧化膜，含有在栅极氧化膜上形成的Si的栅电极，形成在栅极氧化膜和栅极电极的侧壁上的间隔物，LDD区域形成在硅衬底下的衬垫下，形成在硅衬底中的源/漏区，通过使Ni膜与源极/漏极区和栅电极反应而形成在源/漏区和栅电极上的NiSi薄膜 ; 以及在通过使用Ar等离子体对镍膜进行表面处理而使Ni膜与氮反应而形成的NiSi薄膜上形成的氮化物膜。具有NiSi薄膜的半导体器件具有低的薄层电阻并且可以获得高的热稳定性。

5. 发明申请

US20050086946A1 Specimen cooling system of focused ion beam apparatus 审中-公开
标题翻译：聚焦离子束装置样品冷却系统
公开(公告)号：US20050086946A1
公开(公告)日：2005-04-28
申请号：US10949341
申请日：2004-09-27
申请人： In-yong Song , Chel-jong Choi
发明人： In-yong Song , Chel-jong Choi
IPC分类号： H01J37/20 , C23C14/54 , F25B21/02 , F25D3/10 , G01N1/32 , G01N1/42 , H01J37/305 , H01L21/302 , H01L21/66 , F25B19/00 , F25D17/02
CPC分类号： H01J37/3056 , C23C14/541 , F25B21/02 , F25D3/10 , G01N1/32 , G01N1/42 , H01J2237/2001
摘要： Provided is a specimen cooling system of a focused ion beam apparatus. The specimen cooling system includes: a reaction chamber; a stage which is installed in the reaction chamber; a specimen holder which is installed over the stage and on which a specimen is placed; a heat transmission part which is attached to the specimen holder and extends from the interior of the reaction chamber to the outside so as to transmit heat, which is generated in the specimen during a process, outside the reaction chamber; and a heat sink which is connected to an end of the heat transmission part that extends from the interior of the reaction chamber to the outside and which absorbs the heat transmitted by the heat transmission part.
摘要翻译：提供了一种聚焦离子束装置的样品冷却系统。试样冷却系统包括：反应室; 安装在反应室中的阶段; 试样架，安装在载物台上并放置试样; 传热部分附接到试样保持器并从反应室的内部延伸到外部，以便在反应室内将在试样中产生的热量传递到反应室外部; 以及散热器，其连接到从反应室的内部延伸到外部并且吸收由传热部分传递的热量的传热部分的端部。

6. 发明授权

US07144680B2 Electron beam lithography method using new material 失效
公开(公告)号：US07144680B2
公开(公告)日：2006-12-05
申请号：US11220697
申请日：2005-09-08
申请人： Jong-bong Park , Chel-jong Choi
发明人： Jong-bong Park , Chel-jong Choi
IPC分类号： G03C5/00
CPC分类号： G03C5/00 , B82Y10/00 , B82Y40/00 , G03F7/0043 , G03F7/167 , H01J37/3174 , H01J2237/3174 , H01J2237/31754 , H01J2237/31796 , Y10S430/143
摘要： An electron beam (EB) lithography method using a new material is provided. The method includes forming a thin layer using a Pb-based material; and patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams. In this method, the thin layer formed of the Pb-based material is patterned using e-beams so that the linewidth of patterns formed on the thin layer can be greatly reduced.

7. 发明授权

US07569846B2 Phase-change memory device including nanowires and method of manufacturing the same 有权
标题翻译：包括纳米线的相变存储器件及其制造方法
公开(公告)号：US07569846B2
公开(公告)日：2009-08-04
申请号：US11429744
申请日：2006-05-08
申请人： Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
发明人： Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/16 , Y10S977/762
摘要： A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.
摘要翻译：包括多个纳米线的相变随机存取存储器（PRAM）器件及其制造方法包括：包括多个接触插塞的下部结构; 所述纳米线从限定所述接触插塞的相应末端的表面延伸到所述接触插塞中; 以及形成在纳米线顶部的相变层。因此，由PRAM器件消耗的复位或设定电流显着降低。

8. 发明申请

US20070012986A1 Phase-change memory device including nanowires and method of manufacturing the same 有权
标题翻译：包括纳米线的相变存储器件及其制造方法
公开(公告)号：US20070012986A1
公开(公告)日：2007-01-18
申请号：US11429744
申请日：2006-05-08
申请人： Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
发明人： Chel-jong Choi , Jong-bong Park , Tae-gyu Kim , Dong-woo Lee
IPC分类号： H01L21/8242 , H01L29/94
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/16 , Y10S977/762
摘要： a phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.
摘要翻译：包括多个纳米线的相变随机存取存储器（PRAM）器件及其制造方法包括：包括多个接触插塞的下部结构; 所述纳米线从限定所述接触插塞的相应末端的表面延伸到所述接触插塞中; 以及形成在纳米线顶部的相变层。因此，由PRAM器件消耗的复位或设定电流显着降低。

9. 发明申请

US20060019471A1 Method for forming silicide nanowire 审中-公开
标题翻译：硅化物纳米线的形成方法
公开(公告)号：US20060019471A1
公开(公告)日：2006-01-26
申请号：US11100477
申请日：2005-04-07
申请人： Chel-jong Choi
发明人： Chel-jong Choi
IPC分类号： H01L21/20 , C23C16/54 , H01L21/324
CPC分类号： C23C14/16 , C23C14/48 , C23C14/5813 , C23C14/5833 , H01J1/304 , H01J9/025 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/02581 , H01L21/02658 , H01L21/02672 , H01L21/28518
摘要： Methods for forming a silicon-based material layer are disclosed along with silicon-based material layers formed by the method and devices incorporating the silicon-based material layer. The method includes forming an amorphous layer on a silicon-based substrate, doping at least a region of the amorphous layer with a metal ion, and crystallizing the amorphous layer to form a plurality of crystal grains, wherein a grain boundary is between adjacent crystal grains and metal silicide is formed at the grain boundary. The formed metal silicide has nanowire dimensions.
摘要翻译：公开了形成硅基材料层的方法以及通过包含硅基材料层的方法和装置形成的硅基材料层。该方法包括在硅基衬底上形成非晶层，用金属离子至少掺杂非晶层区域，并使非晶层结晶以形成多个晶粒，其中晶界位于相邻的晶粒之间并且在晶界处形成金属硅化物。形成的金属硅化物具有纳米线尺寸。

10. 发明授权

US07153770B2 Method of manufacturing semiconductor device and semiconductor device manufactured using the same 有权
标题翻译：使用该半导体器件制造的半导体器件和半导体器件的制造方法
公开(公告)号：US07153770B2
公开(公告)日：2006-12-26
申请号：US10745578
申请日：2003-12-29
申请人： Chel-jong Choi
发明人： Chel-jong Choi
IPC分类号： H00L21/44
CPC分类号： H01L29/66515 , H01L21/28518 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising a metal silicide film with uniform surface morphology and interface morphology and a method of manufacturing the same are provided. The metal silicide film of the semiconductor device exhibits low sheet resistance and excellent thermal stability. Therefore, by using the semiconductor device fabrication method, high performance, high quality semiconductor devices can be manufactured.
摘要翻译：提供了包括具有均匀表面形态和界面形态的金属硅化物膜的半导体器件及其制造方法。半导体器件的金属硅化物膜具有低的薄层电阻和优异的热稳定性。因此，通过使用半导体器件制造方法，可以制造高性能，高质量的半导体器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式