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1. 发明授权

US07219412B2 Methods of forming titanium-containing superconducting compositions 失效
标题翻译：形成含钛超导组合物的方法
公开(公告)号：US07219412B2
公开(公告)日：2007-05-22
申请号：US10860342
申请日：2004-06-02
申请人： Yun Xu , Stephen P. Turner , Mathew S. Cooper , Wei Guo , David B. Love , Edward Cawley
发明人： Yun Xu , Stephen P. Turner , Mathew S. Cooper , Wei Guo , David B. Love , Edward Cawley
IPC分类号： H01L39/24
CPC分类号： H01L39/12 , C22B34/1295 , H01L39/2406 , Y10S420/901 , Y10S505/805 , Y10T29/49014
摘要： The invention includes superconducting titanium-containing compositions having less than 200 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen. The invention also includes methods of forming superconducting titanium-containing superconducting compositions containing less than 100 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen.
摘要翻译：本发明包括超导含钛组合物，其具有小于200ppm重量的选自氮，氧，碳和氢的间隙材料的总和。本发明还包括形成超导含钛超导组合物的方法，所述超导含钛超导组合物含有选自氮，氧，碳和氢的间隙材料的总和小于100ppm重量。

2. 发明申请

US20050272607A1 Titanium-containing superconducting compositions, and methods of forming titanium-containing superconducting compositions 失效
标题翻译：含钛超导组合物，以及形成含钛超导组合物的方法
公开(公告)号：US20050272607A1
公开(公告)日：2005-12-08
申请号：US10860342
申请日：2004-06-02
申请人： Yun Xu , Stephen Turner , Mathew Cooper , Wei Guo , David Love , Edward Cawley
发明人： Yun Xu , Stephen Turner , Mathew Cooper , Wei Guo , David Love , Edward Cawley
IPC分类号： C22B34/12 , H01B1/00 , H01L39/12 , H01L39/24
CPC分类号： H01L39/12 , C22B34/1295 , H01L39/2406 , Y10S420/901 , Y10S505/805 , Y10T29/49014
摘要： The invention includes superconducting titanium-containing compositions having less than 200 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen. The invention also includes methods of forming superconducting titanium-containing superconducting compositions containing less than 100 ppm, by weight, of a combined total of interstitial materials selected from the group consisting of nitrogen, oxygen, carbon and hydrogen.
摘要翻译：本发明包括超导含钛组合物，其具有小于200ppm重量的选自氮，氧，碳和氢的间隙材料的总和。本发明还包括形成超导含钛超导组合物的方法，所述超导含钛超导组合物含有选自氮，氧，碳和氢的间隙材料的总和小于100ppm重量。

3. 发明申请

US20060037672A1 High-purity titanium-nickel alloys with shape memory 审中-公开
标题翻译：高纯度钛镍合金，形状记忆
公开(公告)号：US20060037672A1
公开(公告)日：2006-02-23
申请号：US10969600
申请日：2004-10-19
申请人： David Love , Stephen Turner , Yun Xu , Edward Cawley
发明人： David Love , Stephen Turner , Yun Xu , Edward Cawley
IPC分类号： C22C19/03
CPC分类号： C22C19/03 , C22F1/006
摘要： The invention includes an alloy containing equivalent amounts of nickel and titanium. The alloy has shape memory and a metallic purity of at least about 99.995%, and comprises less than about 200 ppm of gases. The invention also includes an alloy comprising titanium and nickel where the titanium and nickel amounts are non-equivalent. The alloy has shape memory and has a metallic purity of at least 99.995%, and contains less than about 200 ppm of gases. The invention further includes a method of producing a shape memory alloy. Titanium is provided having a metallic purity of at least 99.999% and nickel is provided having a metallic purity of at least 99.99%. The titanium and nickel are combined utilizing at least one melting event independently selected from e-beam melting, vacuum arc melting, vacuum induction melting, induction skull melting and plasma melting.
摘要翻译：本发明包括含有等量的镍和钛的合金。该合金具有至少约99.995％的形状记忆和金属纯度，并且包含小于约200ppm的气体。本发明还包括钛和镍的合金，其中钛和镍的量是不相等的。该合金具有形状记忆，并且具有至少99.995％的金属纯度，并且含有少于约200ppm的气体。本发明还包括一种制备形状记忆合金的方法。提供具有至少99.999％的金属纯度的钛，并且提供具有至少99.99％的金属纯度的镍。使用独立地选自电子束熔化，真空电弧熔化，真空感应熔化，感应颅骨熔化和等离子体熔融的至少一个熔融事件来组合钛和镍。

4. 发明申请

US20050230013A1 Methods of making nickel/vanadium structures 审中-公开
标题翻译：制造镍/钒结构的方法
公开(公告)号：US20050230013A1
公开(公告)日：2005-10-20
申请号：US11148596
申请日：2005-06-08
申请人： Wei Guo , Stephen Turner , Edward Cawley
发明人： Wei Guo , Stephen Turner , Edward Cawley
IPC分类号： C01G20060101 , C22C19/03 , C22F1/10 , C23C14/00 , C23C14/34 , C25B11/00 , H01L21/203
CPC分类号： C22C19/03 , C23C14/3414 , H01J37/3426
摘要： The invention includes sputtering components, such as sputtering targets, comprising high-purity Ni—V. The sputtering components can have a fine average grain size throughout, with an exemplary fine average grain size being a grain size less than or equal to 40 microns. The invention also includes methods of making high-purity Ni—V structures.
摘要翻译：本发明包括包含高纯Ni-V的溅射元件，如溅射靶。溅射组分可以具有整个细微的平均晶粒尺寸，示例性的细微平均晶粒尺寸是小于或等于40微米的晶粒尺寸。本发明还包括制备高纯度Ni-V结构的方法。

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