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    • 8. 发明授权
    • Slurry for chemical-mechanical planarization of sapphire and method for manufacturing the same
    • 用于蓝宝石化学机械平面化的浆料及其制造方法
    • US07883557B2
    • 2011-02-08
    • US11753224
    • 2007-05-24
    • Yuling LiuBomei TanJianwei ZhouXinhuan NiuShengli WangJingye KangWei Zhang
    • Yuling LiuBomei TanJianwei ZhouXinhuan NiuShengli WangJingye KangWei Zhang
    • B24D3/02C09C1/68C09K3/14
    • C09K3/1463C09G1/02
    • Taught herein is an aqueous chemical-mechanical polishing slurry, a method for manufacturing the same, and a method for using the same in the preparation of high precision finishing of a sapphire surface. The slurry comprises a chelating agent having 13 chelate rings, a strong propensity for complexation with aluminum ions and for forming a water-soluble chelate product. The removal rate can reach 10-16 μm/h, and the roughness can be reduced to 0.1 nm. The slurry components and their weight percentages are as follows: silica sol from about 1 wt. % to about 90 wt. %, alkali modifier from about 0.25 wt. % to about 5 wt. %, ether-alcohol activator from 0.5 wt. % to about 10 wt. %, chelating agent from about 1.25 wt. % to about 15 wt. %, and deionized water. Using such a slurry, high precision finishing of a sapphire surface can be achieved under relevant polishing conditions, which can satisfy the finishing requirements for industrial sapphire substrate. The slurry has the advantages of low cost, low roughness, and high removal rates, and it does not pollute the environment or damage the etching equipment.
    • 本发明是一种水性化学机械抛光浆料,其制造方法,以及用于制备蓝宝石表面的高精度精加工的方法。 浆料包含具有13个螯合环的螯合剂,与铝离子络合的强烈倾向并形成水溶性螯合物。 去除率可以达到10-16μm/ h,粗糙度可以降低到0.1nm。 浆料组分及其重量百分比如下:硅溶胶约1重量% %至约90wt。 %,碱改性剂约0.25wt。 %至约5wt。 %,乙醚 - 醇活化剂0.5重量% %至约10wt。 %,螯合剂约1.25wt。 %至约15wt。 %和去离子水。 使用这样的浆料,可以在相关的抛光条件下实现蓝宝石表面的高精度精加工,这可以满足工业蓝宝石衬底的精加工要求。 该浆料具有成本低,粗糙度低,去除率高的优点,不会污染环境或损坏蚀刻设备。
    • 9. 发明授权
    • Method for removing contaminants from silicon wafer surface
    • 从硅晶片表面去除污染物的方法
    • US07578890B2
    • 2009-08-25
    • US11753219
    • 2007-05-24
    • Yuling LiuXinhuan NiuShengli WangJuan WangWeiwei LiZhenguo Ma
    • Yuling LiuXinhuan NiuShengli WangJuan WangWeiwei LiZhenguo Ma
    • B08B3/00B08B3/12C25F1/00C25F3/30
    • H01L21/02052C11D1/72C11D3/30C11D11/0047C11D11/007
    • Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.
    • 教授是从硅晶片表面去除表面污染物(包括有机污染物,金属离子和固体颗粒)的方法,包括以下步骤:(a)将硅晶片表面浸入通过其中流过电流的水性清洁剂溶液中 掺杂金刚石膜作为电极; (b)将硅晶片表面浸没在水性清洁剂溶液中; 对硅晶片进行超声波; 和任选地加热溶液; (c)使用掺杂硼的金刚石膜作为电极将硅晶片表面浸入通过电流的水中; (d)用超声波和加热将硅晶片表面浸入水中; (e)重复步骤(d); 和(f)用水喷涂硅表面。 使用根据本发明的方法获得的结果远远优于用常规方法获得的结果。 技术简单,操作方便,环保。