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1. 发明申请

US20070278447A1 SLURRY FOR CHEMICAL-MECHANICAL PLANARIZATION OF SAPPHIRE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： SAPPHIRE化学机械平面化浆料及其制造方法
公开(公告)号：US20070278447A1
公开(公告)日：2007-12-06
申请号：US11753224
申请日：2007-05-24
申请人： Yuling LIU , Bomei TAN , Jianwei ZHOU , Xinhuan NIU , Shengli WANG , Jingye KANG , Wei ZHANG
发明人： Yuling LIU , Bomei TAN , Jianwei ZHOU , Xinhuan NIU , Shengli WANG , Jingye KANG , Wei ZHANG
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： C09K3/1463 , C09G1/02
摘要： Taught herein is an aqueous chemical-mechanical polishing slurry, a method for manufacturing the same, and a method for using the same in the preparation of high precision finishing of a sapphire surface. The slurry comprises a chelating agent having 13 chelate rings, a strong propensity for complexation with aluminum ions and for forming a water-soluble chelate product. The removal rate can reach 10-16 μm/h, and the roughness can be reduced to 0.1 nm. The slurry components and their weight percentages are as follows: silica sol from about 1 wt. % to about 90 wt. %, alkali modifier from about 0.25 wt. % to about 5 wt. %, ether-alcohol activator from 0.5 wt. % to about 10 wt. %, chelating agent from about 1.25 wt. % to about 15 wt. %, and deionized water. Using such a slurry, high precision finishing of a sapphire surface can be achieved under relevant polishing conditions, which can satisfy the finishing requirements for industrial sapphire substrate. The slurry has the advantages of low cost, low roughness, and high removal rates, and it does not pollute the environment or damage the etching equipment.
摘要翻译：本发明是一种水性化学机械抛光浆料，其制造方法，以及用于制备蓝宝石表面的高精度精加工的方法。浆料包含具有13个螯合环的螯合剂，与铝离子络合的强烈倾向并形成水溶性螯合物。去除率可以达到10-16 mum / h，粗糙度可以降低到0.1 nm。浆料组分及其重量百分比如下：硅溶胶约1重量％％至约90wt。％，碱改性剂约0.25wt。％至约5wt。％，乙醚 - 醇活化剂0.5重量％％至约10wt。％，螯合剂约1.25wt。％至约15wt。％和去离子水。使用这样的浆料，可以在相关的抛光条件下实现蓝宝石表面的高精度精加工，这可以满足工业蓝宝石衬底的精加工要求。该浆料具有成本低，粗糙度低，去除率高的优点，不会污染环境或损坏蚀刻设备。

2. 发明申请

US20120318293A1 METHOD OF CLEANING WAFER SURFACES AFTER POLISHING ALUMINUM WIRINGS IN ULTRA LARGE SCALE INTEGRATED CIRCUITS 审中-公开
标题翻译：在超大规模集成电路中抛光铝线后清洗水面的方法
公开(公告)号：US20120318293A1
公开(公告)日：2012-12-20
申请号：US13598567
申请日：2012-08-29
申请人： Yuling LIU , Jianwei ZHOU , Yi HU
发明人： Yuling LIU , Jianwei ZHOU , Yi HU
IPC分类号： C23G1/24
CPC分类号： H01L21/02074 , C11D3/0073 , C11D11/0047 , H01L21/3212
摘要： A method of cleaning wafer surfaces after polishing aluminum wirings by means of a polishing disc in ultra large scale integrated circuits, the method including: a) mixing and stirring deionized water, between 0.5 and 5 wt. % of a surfactant, between 0.1 and 5 wt. % of an FA/O II chelating agent, and between 0.01 and 5 wt. % of an FA/O II corrosion inhibitor, to yield a neutral aqueous cleaning solution; and b) after a chemical-mechanical polishing treatment for aluminum wirings, directly washing wafer surfaces with the neutral aqueous cleaning solution without lifting the polishing disc.
摘要翻译：一种在超大规模集成电路中通过抛光盘抛光铝布线之后清洁晶片表面的方法，所述方法包括：a）将去离子水混合并搅拌0.5至5wt。％的表面活性剂，0.1至5wt。％的FA / O II螯合剂，和0.01至5wt。％的FA / O II缓蚀剂，得到中性含水清洗液; 和b）在对铝布线进行化学机械抛光处理后，直接用中性水性清洁溶液清洗晶片表面，而不会抬起抛光盘。

3. 发明申请

US20210047313A1 ANTITUMOR COMPOUND FOR ACTIVATING JWA GENE AND DEGRADING HER2, PREPARATION METHOD THEREOF, AND APPLICATION THEREOF 有权
公开(公告)号：US20210047313A1
公开(公告)日：2021-02-18
申请号：US16992089
申请日：2020-08-12
申请人： Jianwei ZHOU
发明人： Jianwei ZHOU , Yanlin REN , Dongyin CHEN , Yefei HUANG , Aiping LI
IPC分类号： C07D417/12 , A61P35/00
摘要： A compound as shown in formula I. R1 is selected from the group consisting of —OH, —CH3, —CH2CH3, —OCH3, —OCH2CH3; R2 is selected from the group consisting of —H, —OH, —CH3, —CH2CH3, —CH2CH2CH3, —OCH3, —OCH2CH2CH3; R3 is selected from the group consisting of —F, —Cl, —Br, —I, —CF3; R4 is selected from the group consisting of —H, —F, —Cl, —Br, —I, —CF3; and R5 is selected from the group consisting of —H, —CH3, —CH2CH3.

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