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1. 发明授权

US06891243B2 Solid-state image pick-up device 失效
标题翻译：固态摄像装置
公开(公告)号：US06891243B2
公开(公告)日：2005-05-10
申请号：US10615904
申请日：2003-07-10
申请人： Yuko Adachi , Tetsuo Yamada , Shinji Uya
发明人： Yuko Adachi , Tetsuo Yamada , Shinji Uya
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/372 , H01L31/00
CPC分类号： H01L27/14887 , H01L27/1463 , H01L27/14806 , H01L27/14831
摘要： In a solid-state image pick-up device comprising a plurality of light receiving sensor sections, a vertical transfer path 12 formed close to each of the light receiving sensor sections, and a channel stopper 13 provided between the adjacent vertical transfer paths 12 and formed by an insulating layer having a trench structure, a conductive substance 15 to which a predetermined voltage is applied is buried in the insulating layer 14. The predetermined voltage is a negative voltage if a signal charge is an electron, and is a positive voltage if the signal charge is a hole. Alternatively, the predetermined voltage is a pulse having an opposite phase to that of a read pulse to be applied to a transfer electrode 17 of the vertical transfer path 12.
摘要翻译：在包括多个光接收传感器部分的固态图像拾取装置中，靠近每个光接收传感器部分形成的垂直传送路径12和设置在相邻垂直传送路径12之间并形成的通道限位器13 通过具有沟槽结构的绝缘层，将施加有预定电压的导电物质15埋入绝缘层14中。如果信号电荷是电子，预定电压是负电压，如果信号电荷是一个孔，则是正电压。或者，预定电压是具有与要施加到垂直传送路径12的传送电极17的读取脉冲的相位相反的相位的脉冲。

2. 发明授权

US06784935B1 Image pickup apparatus capable of wide dynamic range by double exposure, and control thereof 失效
标题翻译：通过双倍曝光能够实现宽动态范围的摄像装置及其控制
公开(公告)号：US06784935B1
公开(公告)日：2004-08-31
申请号：US09432114
申请日：1999-11-02
申请人： Shinji Uya , Tetsuo Yamada
发明人： Shinji Uya , Tetsuo Yamada
IPC分类号： H04N5335
CPC分类号： H04N5/2355 , H04N5/235 , H04N5/35581 , H04N5/3728
摘要： An image pickup apparatus having:a plurality of photoelectric conversion elements each generating an electric signal through photoelectric conversion; a plurality of signal storage elements for storing the electric signals generated by the photoelectric conversion elements; a plurality of gates for reading the electric signals generated by the photoelectric conversion elements and storing the read electric signals in the signal storage elements; a controller for performing a first image pickup operation by making the photoelectric conversion elements generate the electric signals, reading the generated electric signals and storing the read electric signals in the signal storage elements, thereafter performing a second image pickup operation under an image pickup condition different from the first image pickup operation by making the photoelectric conversion elements generate the electric signals, thereafter outputting the electric signals generated by the first image pickup operation and stored in the signal storage elements to an external, and thereafter reading the electric signals generated by the second image pickup operation from the photoelectric conversion elements, storing the read electric signals in the signal storage elements, and outputting the electric signals to the external; and a synthesizing unit for generating an image signal by subjecting the output electric signals generated by the first and second image pickup operations to a white clip process and synthesizing the output electric signals.
摘要翻译：一种图像拾取装置，具有：多个光电转换元件，各自通过光电转换产生电信号; 多个信号存储元件，用于存储由光电转换元件产生的电信号; 多个门，用于读取由光电转换元件产生的电信号，并将读取的电信号存储在信号存储元件中; 控制器，用于通过使光电转换元件产生电信号，读取所生成的电信号并将读取的电信号存储在信号存储元件中，然后在不同的图像拾取条件下执行第二图像拾取操作来执行第一图像拾取操作通过使光电转换元件产生电信号从第一图像拾取操作中，然后将由第一图像拾取操作生成并存储在信号存储元件中的电信号输出到外部，然后读取由第二图像生成的电信号将来自光电转换元件的图像拾取操作，将读取的电信号存储在信号存储元件中，并将电信号输出到外部; 以及合成单元，用于通过对由第一和第二图像拾取操作产生的输出电信号进行白夹子处理并合成输出电信号来产生图像信号。

3. 发明授权

US08216873B2 Back-illuminated type imaging device and fabrication method thereof 有权
标题翻译：背照式成像装置及其制造方法
公开(公告)号：US08216873B2
公开(公告)日：2012-07-10
申请号：US13100475
申请日：2011-05-04
申请人： Shinji Uya
发明人： Shinji Uya
IPC分类号： H01L21/28
CPC分类号： H01L27/14603 , H01L27/14636 , H01L27/1464
摘要： Light is illuminated from a back-surface side of a silicon substrate 4. A back-illuminated type imaging device 100 reads out, from a front-surface side of the silicon substrate 4, charges that are generated in the silicon substrate 4 in response to the illuminated light, so as to perform imaging. The back-illuminated type imaging device 100 includes pad portions 17 formed on the back surface of the semiconductor substrate 4, and a plurality of pillars 9 that are formed in the semiconductor substrate 4, are made of a conductive material and electrically connect wiring portions 12 formed on the front surface of the semiconductor substrate 4 and the pad portions 17 to each other.
摘要翻译：从硅衬底4的背表面照射光。背照式成像装置100从硅衬底4的表面侧读出响应于硅衬底4中产生的电荷照明的光，以便进行成像。背照式成像装置100包括形成在半导体基板4的背面上的焊盘部17和形成在半导体基板4中的多个支柱9，由导电材料制成，并将布线部12电连接形成在半导体基板4的前表面和焊盘部17上。

4. 发明授权

US08030608B2 Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device 有权
标题翻译：背面照明成像装置，半导体基板，成像装置及制造背面照明成像装置的方法
公开(公告)号：US08030608B2
公开(公告)日：2011-10-04
申请号：US12821704
申请日：2010-06-23
申请人： Shinji Uya , Masanori Nagase , Yosuke Nakahashi , Toru Hachiya
发明人： Shinji Uya , Masanori Nagase , Yosuke Nakahashi , Toru Hachiya
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/1464 , H01L27/14812
摘要： A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.
摘要翻译：背面照明成像装置通过照射来自p基板的背面的光来进行成像，以基于光在基板中产生电荷，并从基板的前侧读出电荷。该器件包括位于衬底中并且在靠近衬底的前侧表面的相同平面上的n个层并且积蓄电荷; n +层之间，n +层具有暴露于基板的前侧表面上的露出表面，并且用作用于排放积累在n层中的不需要的电荷的溢流排水口; p +层在相应的n +层和n层之间并且用作溢流漏极的溢流屏障; 以及连接到每个n +层的暴露表面的电极。

5. 发明授权

US07736937B2 Manufacturing method of solid-state imaging device and solid-state imaging device 失效
标题翻译：固态成像装置和固态成像装置的制造方法
公开(公告)号：US07736937B2
公开(公告)日：2010-06-15
申请号：US11504648
申请日：2006-08-16
申请人： Yuko Nomura , Shinji Uya
发明人： Yuko Nomura , Shinji Uya
IPC分类号： H01L21/00
CPC分类号： H01L27/14887 , H01L27/14689
摘要： A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.
摘要翻译：一种固态成像装置的制造方法，所述装置包括：半导体衬底; 每个光电二极管包括与半导体衬底的表面相邻形成的表面侧第一导电类型区域和直接位于表面侧第一导电类型区域下方的第二导电类型区域; 设置在表面侧第一导电类型区域附近的第二导电型垂直传输区域; 设置在垂直传送区域下方的至少一个第一导电类型的像素间隔离区域; 以及设置在所述第一导电型像素间隔离区域的下方的至少一个第一导电型溢出阻挡区域，所述方法包括：在半导体衬底中形成所述第一导电型溢出阻挡区域的第一步骤; 以及从倾向于发生沟道的方向离子注入第一导电型杂质离子的第二步骤，以形成第一导电类型像素间隔离区域中的至少一个。

6. 发明授权

US07372496B2 Solid-state image capturing device and imaging apparatus using the same 失效
标题翻译：固体摄像装置及使用其的成像装置
公开(公告)号：US07372496B2
公开(公告)日：2008-05-13
申请号：US10329780
申请日：2002-12-27
申请人： Shinji Uya , Yong Gwan Kim , Tomohiro Sakamoto
发明人： Shinji Uya , Yong Gwan Kim , Tomohiro Sakamoto
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14831 , H01L27/14812 , H04N5/3559 , H04N5/374 , H04N5/378 , H04N9/045
摘要： An n-type semiconductor substrate 11 has a p-type well 12 in which are formed a charge transfer channel 13, a flowing diffusion region 14 made of an n-type impurity region, an n-type buried region 16 and a reset drain region 15. Transfer gates 51 and 52 of a horizontal CCD and an output gate 41 are formed on the surface of the charge transfer channel 13, with an insulation film 20 interposed; reset electrodes 31 and 32 are formed on the surface of the buried region 16, again with the insulation film 20 interposed. The floating diffusion region 14 is connected to a source follower circuit 6. The reset electrodes 31 and 32 are provided adjacent to each other in the channel direction of a reset gate section 3 and can be driven independently of each other.
摘要翻译： n型半导体基板11具有p型阱12，其中形成有电荷传输沟道13，由n型杂质区构成的流动扩散区14，n型掩埋区16和复位漏极区 15。水平CCD和输出门41的转移门51和52形成在电荷转移通道13的表面上，绝缘膜20被插入; 复位电极31,32形成在掩埋区域16的表面上，再次插入绝缘膜20。浮动扩散区域14连接到源极跟随器电路6。复位电极31和32在复位栅极部3的沟道方向上彼此相邻地设置，并且可以彼此独立地驱动。

7. 发明授权

US07372089B2 Solid-state image sensing device 有权
标题翻译：固态摄像装置
公开(公告)号：US07372089B2
公开(公告)日：2008-05-13
申请号：US11369734
申请日：2006-03-08
申请人： Tomoki Inoue , Shinji Uya
发明人： Tomoki Inoue , Shinji Uya
IPC分类号： H01L31/062
CPC分类号： H01L27/14893 , H01L27/14647
摘要： A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein.
摘要翻译：一种设置在半导体衬底上方的光电转换膜的固态摄像装置，包括：如本文所定义的第一杂质区; 如本文所定义的第二杂质区; 信号电荷读取区域; 和第三杂质区域。

8. 发明授权

US07075164B2 Semiconductor photoelectric conversion device suitable for miniaturization 有权
公开(公告)号：US07075164B2
公开(公告)日：2006-07-11
申请号：US10299757
申请日：2002-11-20
申请人： Shinji Uya
发明人： Shinji Uya
IPC分类号： H01L27/14 , H01L31/00
CPC分类号： H01L27/14812 , H01L27/14623 , H01L27/14627
摘要： A semiconductor photoelectric conversion device includes: a number of photoelectric conversion elements formed in a principal surface of the semiconductor substrate; functional devices formed in the semiconductor substrate adjacent to photoelectric conversion elements; a light shielding film formed above the semiconductor substrate for shielding light above the functional devices and having a window above each photoelectric conversion element; and an effective wavelength shortening member disposed in the windows, and being made of transmissive material having a high refractive index, thereby shortening an effective wavelength of light passing through the windows.

9. 发明授权

US08158452B2 Backside-illuminated imaging device and manufacturing method of the same 有权
标题翻译：背面照明成像装置及其制造方法
公开(公告)号：US08158452B2
公开(公告)日：2012-04-17
申请号：US13007482
申请日：2011-01-14
申请人： Shinji Uya
发明人： Shinji Uya
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14618 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： A backside-illuminated imaging device, which performs imaging by illuminating light from a back side of a semiconductor substrate to generate electric charges in the semiconductor substrate based on the light and reading out the electric charges from a front side of the semiconductor substrate, is provided and includes: a back-side layer including an back-side element on the back side of the semiconductor substrate; a front-side layer including an front-side element on the front side of the semiconductor substrate; a support substrate above the front-side layer; a spacer, one end of which comes in contact with the front-side layer and the other end of which comes in contact with the support substrate, to form a space having a uniform distance between the semiconductor substrate and the support substrate; and an adhesive filled in at least a part of the space between the surface-side element formation layer and the support substrate.
摘要翻译：背面照明成像装置，其通过照射来自半导体基板的背面的光进行成像，从而基于所述光在半导体基板中产生电荷并从半导体基板的前侧读出电荷。并且包括：在所述半导体衬底的背侧上包括背面元件的背面层; 包括在所述半导体衬底的前侧上的前侧元件的前侧层; 在前侧层上方的支撑基板; 间隔件，其一端与前侧层接触，另一端与支撑基板接触，形成半导体基板与支撑基板之间具有均匀距离的空间; 以及填充在表面侧元件形成层和支撑基板之间的空间的至少一部分的粘合剂。

10. 发明授权

US08063959B2 Backside illumination image pickup device, method of producing backside illumination image pickup device, and semiconductor substrate for backside illumination image pickup device 有权
标题翻译：背面照明图像拾取装置，背面照明图像拾取装置的制造方法和背面照明图像拾取装置用半导体基板
公开(公告)号：US08063959B2
公开(公告)日：2011-11-22
申请号：US12126603
申请日：2008-05-23
申请人： Shinji Uya
发明人： Shinji Uya
IPC分类号： H04N3/14
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14623 , H01L27/1463 , H01L27/1464 , H01L27/14643
摘要： An image pickup device including a semiconductor substrate that is irradiated with light from a first surface side thereof, and reading signal charges generated in the semiconductor substrate in accordance with the light from a second surface side thereof, wherein the semiconductor substrate includes: a photoelectric converting layer that includes a plurality of impurity diffusion layers on the second surface side of the semiconductor substrate, and that produces the signal charges by photoelectric conversion; and an embedded member that includes a light blocking material, and that is embedded in an impurity diffusion layer on a surface side of the photoelectric converting layer, the surface side facing the second surface side of the semiconductor substrate.
摘要翻译：一种图像拾取装置，包括：半导体衬底，其被来自其第一表面侧的光照射，并且根据来自其第二表面侧的光读取在半导体衬底中产生的信号电荷，其中所述半导体衬底包括：光电转换层，其在半导体衬底的第二表面侧上包括多个杂质扩散层，并且通过光电转换产生信号电荷; 以及嵌入构件，其包括遮光材料，并且嵌入在所述光电转换层的表面侧上的与所述半导体衬底的第二表面侧相对的表面侧的杂质扩散层中。

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