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1. 发明授权

US5290731A Aluminum metallization method 失效
标题翻译：铝金属化方法
公开(公告)号：US5290731A
公开(公告)日：1994-03-01
申请号：US848123
申请日：1992-03-09
申请人： Yukiyasu Sugano , Shinji Minegishi , Kazuhide Koyama , Hirofumi Sumi
发明人： Yukiyasu Sugano , Shinji Minegishi , Kazuhide Koyama , Hirofumi Sumi
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L21/441
CPC分类号： H01L21/76862 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877
摘要： A metallization method for improving wettability and reactivity of a titanium (Ti) based barrier metal layer with respect to an aluminum (Al) based material and simultaneously achieving high barrier properties and superior step coverage, is proposed. An operation of increasing the crystal grain size of and planarizing at least a surface region of a barrier metal layer is effected simultaneously at the time of formation of a barrier metal layer. In this manner, Al migration characteristics and reactivity on a barrier metal surface are improved so that voids are not produced when an Al-based material layer is charged into small-sized connecting hole by a process sensitive to surface morphology, such as high temperature bias sputtering. By this technique, wettability of a material layer having distinctly inferior wettability with Al, while being excellent in barrier properties, such as a TiON layer, may be improved. As a smoothing operation, bias sputtering, laser irradiation and lamp annealing are proposed. Satisfactory results have been achieved on applying these to a Ti/TiON/Ti system, a Ti/TiON system or to a Ti/TiON/TiSi.sub.2 system.
摘要翻译：提出了一种用于改善钛（Ti）基阻挡金属层相对于铝（Al）基材料的润湿性和反应性的金属化方法，同时实现高阻挡性能和优异的台阶覆盖率。在形成阻挡金属层时同时进行增加阻挡金属层的至少表面区域的晶粒尺寸和平坦化的操作。以这种方式，改善了阻挡金属表面的Al迁移特性和反应性，使得当通过对表面形态敏感的方法将Al基材料层装入小尺寸连接孔时，不会产生空隙，例如高温偏差溅射。通过这种技术，可以提高具有优异的耐湿性的材料层与Al的润湿性，同时具有优异的阻隔性能，例如TiON层。作为平滑化处理，提出偏置溅射，激光照射和灯退火。在Ti / TiON / Ti体系，Ti / TiON体系或Ti / TiON / TiSi2体系中应用这些结果已经取得了令人满意的结果。

2. 发明授权

US5776830A Process for fabricating connection structures 失效
标题翻译：制造连接结构的工艺
公开(公告)号：US5776830A
公开(公告)日：1998-07-07
申请号：US947704
申请日：1997-10-09
申请人： Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
发明人： Hirofumi Sumi , Keiichi Maeda , Yukiyasu Sugano , Kazuhide Koyama , Mitsuru Taguchi , Kazuhiro Hoshino
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/283
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856
摘要： The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.
摘要翻译：本发明提供一种制造连接结构的方法，该连接结构包括具有优异的阻挡性能并具有相对于半导体衬底的改善的欧姆特性的抗反应层。因此，本发明包括通过暂时停止膜沉积来形成第一抗反应层，然后再次引发膜沉积，以在先前沉积的第一抗反应层的表面上形成第二抗反应层。沉积抗反应层后可以对结构进行热处理。

3. 发明授权

US5397744A Aluminum metallization method 失效
标题翻译：铝金属化方法
公开(公告)号：US5397744A
公开(公告)日：1995-03-14
申请号：US283255
申请日：1994-07-29
申请人： Hirofumi Sumi , Yukiyasu Sugano
发明人： Hirofumi Sumi , Yukiyasu Sugano
IPC分类号： H01L21/285 , H01L21/768 , H01L21/283
CPC分类号： H01L21/76859 , H01L21/28518 , H01L21/76838 , H01L21/76843 , H01L2924/0002 , Y10S148/019
摘要： A metallization method in which a fine interconnection hole is filled with an Al-based material and in which low resistance and excellent barrier properties may be achieved simultaneously, is proposed. The present invention resides in improvement in the barrier metal structure. (a) A stack of a TiSi.sub.2 layer and a Ti layer, formed by an modified SALICIDE method, and (b) a layer of a Ti-based material rendered amorphous are used. The TiSi.sub.2 layer is formed in a self-aligned manner by reacting the silicon substrate with the Ti layer by the interposition of e.g. a thin SiO.sub.2 layer and exhibits lower sheet resistance and dense film properties as well as excellent barriering properties. The Ti layer is stacked on the TiSi.sub.2 layer for improving wettability with respect to the layer of the Al-based material. The layer of the amorphous Ti-based material is formed by N.sub.2 ion implantation into the polycrystalline TiN layer and exhibits superior barrier properties because the crystal grain boundary functioning as the Al diffusion path is destructed. Both of these layers exhibit low sheet resistance as compared to the TiON layer used heretofore as a layer of a material exhibiting excellent barrier properties, while being superior in wettability with respect to the layer of the Al-based material, so that a highly reliable contact may be formed.
摘要翻译：提出了一种金属化方法，其中精细互连孔填充有Al基材料并且其中可以同时实现低电阻和优异的阻挡性能。本发明在于阻挡金属结构的改进。（a）使用通过改性的SALICIDE法形成的TiSi 2层和Ti层的叠层，（b）呈现非晶态的Ti基材料层。 TiSi2层通过使硅衬底与Ti层反应而自对准地形成。薄的SiO 2层，并且具有较低的薄层电阻和致密的膜性质以及优异的阻挡性能。 Ti层层叠在TiSi2层上，用于改善相对于Al基材料的层的润湿性。由于作为Al扩散路径发挥作用的晶粒边界被破坏，因此通过N 2离子注入形成多晶TiN层并且表现出优异的阻挡特性，形成非晶Ti基材料层。与迄今为止用作具有优异阻隔性的材料层的TiON层相比，这两层都具有低的薄层电阻，同时相对于Al基材料的层具有优异的润湿性，使得高度可靠的接触可能形成。

4. 发明申请

US20140160332A1 SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM 有权
标题翻译：固态图像传感器和摄像机系统
公开(公告)号：US20140160332A1
公开(公告)日：2014-06-12
申请号：US14002307
申请日：2012-04-03
申请人： Hirofumi Sumi
发明人： Hirofumi Sumi
IPC分类号： H04N5/374
CPC分类号： H04N5/374 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/3658 , H04N5/378
摘要： A pixel includes an embedded photo diode (PD), an amplification transistor forming a source follower circuit having a gate for input and a source for output, and a transfer transistor that transfers a charge to the gate of the amplification transistor, the charge being photoelectrically converted by the PD. The amplification transistor is formed in a semiconductor substrate electrically isolated from a substrate on which the embedded PD and the transfer transistor are formed and the substrate of the amplification transistor is in a floating state. The reading unit includes a ΔΣ modulator that inputs/outputs the image signal per pixel unit and the output of the ΔΣ modulator is given, as feedback, to a capacitative unit functioning as a capacity to integrate the pixel.
摘要翻译：像素包括嵌入式光电二极管（PD），形成具有用于输入的栅极的源极跟随器电路和用于输出的源极跟随器电路的放大晶体管，以及将电荷转移到放大晶体管的栅极的转移晶体管，电荷是光电由PD转换。放大晶体管形成在与其上形成有嵌入式PD和传输晶体管的衬底电隔离的半导体衬底中，并且放大晶体管的衬底处于浮置状态。阅读单位包括＆Dgr＆＆调制器，每像素单位输入/输出图像信号，并输出＆Dgr;＆Sgr; 作为反馈，将调制器作为集成像素的能力起作用的电容单元。

5. 发明授权

US08711261B2 Method of controlling semiconductor device, signal processing method, semiconductor device, and electronic apparatus 有权
标题翻译：控制半导体器件，信号处理方法，半导体器件和电子设备的方法
公开(公告)号：US08711261B2
公开(公告)日：2014-04-29
申请号：US12903333
申请日：2010-10-13
申请人： Hirofumi Sumi , Nobuo Nakamura , Shoji Kawahito
发明人： Hirofumi Sumi , Nobuo Nakamura , Shoji Kawahito
IPC分类号： H04N5/335 , H04N5/235
CPC分类号： H04N5/3575 , H04N5/243 , H04N5/3696 , H04N5/37455 , H04N5/37457
摘要： A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.
摘要翻译：包括像素信号控制器的固态成像装置的前置放大器（列区域单元）。像素信号控制器对于每个垂直信号线，由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平，并且根据图像信号放大器独立地设置增益信号的电平。在固态成像装置的后续阶段，提供了模数（A / D）转换器和信号延伸单元。 A / D转换器对像素信号进行数字化，参照来自像素信号检测器的分类信号，通过设置到像素信号放大器的增益来校正数字化像素信号，使得一个屏幕的信号的动态范围延长了

6. 发明授权

US08030726B2 Solid-state image sensor and method for manufacturing thereof as well as semiconductor device and method for manufacturing thereof 有权
标题翻译：固态图像传感器及其制造方法以及半导体装置及其制造方法
公开(公告)号：US08030726B2
公开(公告)日：2011-10-04
申请号：US12402195
申请日：2009-03-11
申请人： Hirofumi Sumi
发明人： Hirofumi Sumi
IPC分类号： H01L31/12
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14625 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.
摘要翻译：提供了一种固态图像传感器及其制造方法以及半导体器件及其制造方法。半导体衬底被制成薄膜而不使用SOI衬底，成本降低。在半导体衬底的厚度方向上形成硬度大于半导体衬底的硬度的边缘检测部分; 将半导体衬底制成薄膜，直到从后表面通过化学机械抛光使边缘检测部分暴露的位置; 并且在半导体衬底的前表面上形成用于从形成在衬底中的光电转换元件PD读出信号的装置Tr1，其中从半导体衬底的后表面获取入射光。

7. 发明申请

US20090317935A1 INFORMATION ACQUIRING METHOD, INFORMATION ACQUIRING APPARATUS, SEMICONDUCTOR DEVICE COMPRISING ARRAY OF PLURALITY OF UNIT COMPONENTS FOR DETECTING PHYSICAL QUANTITY DISTRIBUTION, AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：信息获取方法，信息获取装置，包含用于检测物理数量分布的单元组件的多重阵列的半导体装置和半导体制造方法
公开(公告)号：US20090317935A1
公开(公告)日：2009-12-24
申请号：US12489636
申请日：2009-06-23
申请人： Atsushi Toda , Hirofumi Sumi
发明人： Atsushi Toda , Hirofumi Sumi
IPC分类号： H01L31/18
CPC分类号： G01J3/2823 , G01J3/04 , G01J3/1804 , G01J3/2803 , G01J3/502 , G01J3/51 , G01J3/513 , H01L27/14623 , H01L27/14625 , H01L27/14645 , H01L27/14687 , H01L27/14689 , H01L27/14831 , H04N5/2254 , H04N9/045 , H04N9/07
摘要： A method for manufacturing a semiconductor device for detecting a physical amount distribution, the semiconductor device comprising unit components arrayed in a predetermined order, the unit components each including a unit signal generation portion for detecting an electromagnetic wave and outputting the corresponding unit signal. A diffraction grating is provided on the incident light side of a spectral image sensor, the diffraction grating including scatterers, slits, and scatterers disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements in each photodiode group.
摘要翻译：一种用于制造用于检测物理量分布的半导体器件的方法，所述半导体器件包括以预定顺序排列的单元组件，所述单元组件各自包括用于检测电磁波的单元信号生成部分并输出相应的单位信号。衍射光栅设置在光谱图像传感器的入射光侧，衍射光栅包括依次布置的散射体，狭缝和散射体。电磁波被散射体散射以产生衍射波，并且通过使用衍射波之间的干涉图案随波长变化的事实，通过每个光电二极管组中的光电转换元件检测各波长的信号。

8. 发明授权

US06140229A Semiconductor apparatus and method of producing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06140229A
公开(公告)日：2000-10-31
申请号：US27149
申请日：1998-02-20
申请人： Hirofumi Sumi
发明人： Hirofumi Sumi
IPC分类号： H01L21/28 , H01L21/203 , H01L21/3205 , H01L23/485 , H01L23/52 , H01L23/532 , H01L21/44
CPC分类号： H01L23/485 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： A semiconductor apparatus having at least a compound film containing nitrogen and a method for production of the same, wherein the compound film containing nitrogen is formed under conditions where the ratio of the flow rates of the nitrogen with respect to an inert gas is 0.125 to 1.0.
摘要翻译：具有至少含氮化合物膜的半导体装置及其制造方法，其中，在氮气相对于惰性气体的流量比为0.125〜1.0的条件下，形成含氮化合物膜。

9. 发明授权

US6022805A Method of fabricating semiconductor device with a multi-layered interconnection structure having a low contact resistance 失效
标题翻译：制造具有低接触电阻的多层互连结构的半导体器件的方法
公开(公告)号：US6022805A
公开(公告)日：2000-02-08
申请号：US745619
申请日：1996-11-08
申请人： Hirofumi Sumi
发明人： Hirofumi Sumi
IPC分类号： C23F4/00 , C23C14/16 , H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L21/768 , C23C14/00 , H01L21/461
CPC分类号： H01L21/76814 , C23C14/165 , H01L21/02063 , H01L21/28518 , H01L21/31116 , H01L21/76802 , H01L29/665
摘要： A method of fabricating a semiconductor device includes the step of removing native oxide on the surface of a metal silicide layer formed on a shallow impurity diffusion layer and exposed at the bottom portion of a contact hole by sputter etching under an incident ion condition of a high density and a low energy. In this sputter etching, the side surface of the contact hole is prevented from being sputtered and re-deposited on the bottom portion of the contact hole, whereby the native oxide is effectively removed while the impurity diffusion layer is prevented from being damaged. In addition, a substrate may be heated during sputter etching for preventing ion species such as Ar.sup.+ from being entrapped in the metal silicide layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在形成于浅杂质扩散层上的金属硅化物层的表面上除去天然氧化物，并在接触孔的底部暴露于溅射蚀刻的入射离子条件下密度低，能量低。在该溅射蚀刻中，防止了接触孔的侧面溅射并重新沉积在接触孔的底部上，由此在防止杂质扩散层被损坏的同时有效地去除了天然氧化物。此外，在溅射蚀刻期间可以加热衬底，以防止诸如Ar +的离子物质被截留在金属硅化物层中。

10. 发明申请

US20090174017A1 SOLID-STATE IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF AS WELL AS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：固态图像传感器及其制造方法以及其半导体器件及其制造方法
公开(公告)号：US20090174017A1
公开(公告)日：2009-07-09
申请号：US12402195
申请日：2009-03-11
申请人： Hirofumi Sumi
发明人： Hirofumi Sumi
IPC分类号： H01L31/00 , H01L27/146 , H01L31/02
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14625 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.
摘要翻译：提供了一种固态图像传感器及其制造方法以及半导体器件及其制造方法。半导体衬底被制成薄膜而不使用SOI衬底，成本降低。在半导体衬底的厚度方向上形成硬度大于半导体衬底的硬度的边缘检测部分; 将半导体衬底制成薄膜，直到从后表面通过化学机械抛光使边缘检测部分暴露的位置; 并且在半导体衬底的前表面上形成用于从形成在衬底中的光电转换元件PD读出信号的装置Tr1，其中从半导体衬底的后表面获取入射光。

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