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1. 发明授权

US07894239B2 Variable resistance element, method for producing the same, and nonvolatile semiconductor storage device 有权
标题翻译：可变电阻元件及其制造方法以及非易失性半导体存储器件
公开(公告)号：US07894239B2
公开(公告)日：2011-02-22
申请号：US12328648
申请日：2008-12-04
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
IPC分类号： G11C7/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.
摘要翻译：本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变电极。可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

2. 发明申请

US20090147558A1 VARIABLE RESISTANCE ELEMENT, METHOD FOR PRODUCING THE SAME, AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：可变电阻元件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20090147558A1
公开(公告)日：2009-06-11
申请号：US12328648
申请日：2008-12-04
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Fumiyoshi Takano , Hiroyuki Akinaga
IPC分类号： G11C11/21 , H01C7/10 , H01C17/00
CPC分类号： G11C8/08 , G11C13/0007 , G11C13/0028 , G11C2013/0083 , G11C2213/32 , G11C2213/56 , G11C2213/77 , H01C7/108 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1658 , Y10T29/49082
摘要： The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.
摘要翻译：本发明的可变电阻元件是具有电极，另一个电极和夹在电极之间并具有电阻的金属氧化物材料的可变电阻元件，在电极之间，响应于施加在电极之间的电压而可逆地改变电极。可变电阻元件还包括在金属氧化物材料内部的具有比金属氧化物材料低的电阻并且与至少任一个电极不接触的低电阻材料。这使得可以降低用于在金属氧化物材料内部提供导电部分的形成电压，而不会导致泄漏电流增加。

3. 发明申请

US20100172170A1 VARIABLE RESISTIVE ELEMENT, MANUFACTURING METHOD FOR SAME, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：可变电阻元件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20100172170A1
公开(公告)日：2010-07-08
申请号：US12598642
申请日：2008-04-07
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
IPC分类号： G11C11/56 , H01L29/22 , H01L21/44
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
摘要翻译：提供一种执行高速和低功耗操作的可变电阻元件。可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

4. 发明授权

US08054674B2 Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device 有权
标题翻译：可变电阻元件，相同的制造方法和非易失性半导体存储器件
公开(公告)号：US08054674B2
公开(公告)日：2011-11-08
申请号：US12598642
申请日：2008-04-07
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
摘要翻译：提供一种执行高速和低功耗操作的可变电阻元件。可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

5. 发明授权

US07236388B2 Driving method of variable resistance element and memory device 有权
标题翻译：可变电阻元件和存储器件的驱动方法
公开(公告)号：US07236388B2
公开(公告)日：2007-06-26
申请号：US11169535
申请日：2005-06-28
申请人： Yasunari Hosoi , Yukio Tamai , Kazuya Ishihara , Shinji Kobayashi , Nobuyoshi Awaya
发明人： Yasunari Hosoi , Yukio Tamai , Kazuya Ishihara , Shinji Kobayashi , Nobuyoshi Awaya
IPC分类号： G11C11/00
CPC分类号： G11C29/50 , G11C13/0007 , G11C13/0069 , G11C29/50008 , G11C2013/009 , G11C2213/31
摘要： A variable resistance element is configured to be provided with a perovskite-type oxide between a first electrode and a second electrode, of which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse of a predetermined polarity between the first electrode and the second electrode, and the variable resistance element has a resistance hysteresis characteristic, in which a changing rate of a resistance value is changed from positive to negative with respect to increase of a cumulative pulse applying time in the application of the voltage pulse. The voltage pulse is applied to the variable resistance element so that the cumulative pulse applying time is not longer than a specific cumulative pulse applying time, in which the changing rate of the, resistance value is changed from positive to negative with respect to increase of the cumulative pulse applying time in the resistance hysteresis characteristic.
摘要翻译：可变电阻元件被配置为在第一电极和第二电极之间设置有钙钛矿型氧化物，其中通过在第一电极和第二电极之间施加预定极性的电压脉冲来改变第一电极和第二电极之间的电阻电极和第二电极，并且可变电阻元件具有电阻滞后特性，其中电阻值的变化率相对于施加电压脉冲的累积脉冲施加时间的增加而从正变化到负。电压脉冲被施加到可变电阻元件，使得累积脉冲施加时间不长于特定的累积脉冲施加时间，其中电阻值的变化率相对于增加的电阻值从正变化到负累积脉冲施加时间在电阻滞后特性。

6. 发明申请

US20060002174A1 Driving method of variable resistance element and memory device 有权
标题翻译：可变电阻元件和存储器件的驱动方法
公开(公告)号：US20060002174A1
公开(公告)日：2006-01-05
申请号：US11169535
申请日：2005-06-28
申请人： Yasunari Hosoi , Yukio Tamai , Kazuya Ishihara , Shinji Kobayashi , Nobuyoshi Awaya
发明人： Yasunari Hosoi , Yukio Tamai , Kazuya Ishihara , Shinji Kobayashi , Nobuyoshi Awaya
IPC分类号： G11C11/00
CPC分类号： G11C29/50 , G11C13/0007 , G11C13/0069 , G11C29/50008 , G11C2013/009 , G11C2213/31
摘要： A variable resistance element is configured to be provided with a perovskite-type oxide between a first electrode and a second electrode, of which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse of a predetermined polarity between the first electrode and the second electrode, and the variable resistance element has a resistance hysteresis characteristic, in which a changing rate of a resistance value is changed from positive to negative with respect to increase of a cumulative pulse applying time in the application of the voltage pulse. The voltage pulse is applied to the variable resistance element so that the cumulative pulse applying time is not longer than a specific cumulative pulse applying time, in which the changing rate of the, resistance value is changed from positive to negative with respect to increase of the cumulative pulse applying time in the resistance hysteresis characteristic.
摘要翻译：可变电阻元件被配置为在第一电极和第二电极之间设置有钙钛矿型氧化物，其中通过在第一电极和第二电极之间施加预定极性的电压脉冲来改变第一电极和第二电极之间的电阻电极和第二电极，并且可变电阻元件具有电阻滞后特性，其中电阻值的变化率相对于施加电压脉冲的累积脉冲施加时间的增加而从正变化到负。电压脉冲被施加到可变电阻元件，使得累积脉冲施加时间不长于特定的累积脉冲施加时间，其中电阻值的变化率相对于增加的电阻值从正变化到负累积脉冲施加时间在电阻滞后特性。

7. 发明授权

US07952909B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07952909B2
公开(公告)日：2011-05-31
申请号：US12517025
申请日：2007-11-05
申请人： Kohji Inoue , Yasunari Hosoi , Shigeo Ohnishi , Nobuyoshi Awaya
发明人： Kohji Inoue , Yasunari Hosoi , Shigeo Ohnishi , Nobuyoshi Awaya
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0026 , G11C13/0038 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/72 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1633
摘要： Provided is a nonvolatile semiconductor device capable of performing writing operations of different resistance changes for memory cells having variable resistive elements whose resistive characteristics are changed by voltage applications, individually and simultaneously. The device includes: a load resistive characteristic variable circuit for each bit line connected commonly with the memory cells on the same column for selecting one of two load resistive characteristics according to a first writing operation where the resistive characteristics of the variable resistive element to be written transit from a low resistance state to a high resistance state or a second writing operation where they transit reversely; and a writing voltage pulse application circuit for applying a first voltage pulse in a first writing operation and a second voltage pulse in a second writing operation to the memory cells to be written through the load resistive characteristic variable circuits and the bit limes.
摘要翻译：提供了一种非易失性半导体器件，其能够对具有可变电阻元件的存储单元进行不同的电阻变化的写入操作，该电阻元件的电阻特性单独并同时由电压应用而改变。该装置包括：用于与同一列上的存储器单元共同连接的每个位线的负载电阻特性可变电路，用于根据要写入的可变电阻元件的电阻特性的第一写入操作来选择两个负载电阻特性中的一个从低电阻状态转移到高电阻状态或其反向转发的第二写入操作; 以及写入电压脉冲施加电路，用于将第一写入操作中的第一电压脉冲和第二写入操作中的第二电压脉冲施加到要通过负载电阻特性可变电路和位灰分写入的存储单元。

8. 发明授权

US08411488B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08411488B2
公开(公告)日：2013-04-02
申请号：US13233301
申请日：2011-09-15
申请人： Suguru Kawabata , Shinobu Yamazaki , Kazuya Ishihara , Junya Onishi , Nobuyoshi Awaya , Yukio Tamai
发明人： Suguru Kawabata , Shinobu Yamazaki , Kazuya Ishihara , Junya Onishi , Nobuyoshi Awaya , Yukio Tamai
IPC分类号： G11C11/00
CPC分类号： G11C11/5685 , G11C13/0007 , G11C2013/0071 , G11C2013/0073 , G11C2013/0083 , G11C2213/79
摘要： A nonvolatile semiconductor memory device includes a memory cell array for storing user data provided by arranging memory cells each having a variable resistive element having a first electrode, a second electrode, and a variable resistor made of a metal oxide sandwiched between the first and second electrodes. The first and second electrodes are formed of a conductive material forming ohmic junction with the variable resistor and a conductive material forming non-ohmic junction with the variable resistor, respectively. The variable resistor changes between two or more different resistance states by applying a voltage between the electrodes. The resistance state after being changed is maintained in a nonvolatile manner. The variable resistive elements of all memory cells in the memory cell array are set to the highest of the two or more different resistance states in an unused state before the memory cell array is used to store the user data.
摘要翻译：非易失性半导体存储器件包括存储单元阵列，用于存储通过布置存储单元而提供的用户数据，每个存储单元具有可变电阻元件，该可变电阻元件具有第一电极，第二电极和夹在第一和第二电极之间的金属氧化物制成的可变电阻器。第一和第二电极由与可变电阻器形成欧姆结的导电材料和分别与可变电阻器形成非欧姆结的导电材料形成。可变电阻器通过在电极之间施加电压而在两个或多个不同的电阻状态之间变化。改变后的电阻状态保持非挥发性。在存储单元阵列用于存储用户数据之前，将存储单元阵列中的所有存储单元的可变电阻元件设置为处于未使用状态的两个或多个不同电阻状态中的最高值。

9. 发明申请

US20120025163A1 NON-VOLATILE SEMICONDUCTOR DEVICE 有权
标题翻译：非挥发性半导体器件
公开(公告)号：US20120025163A1
公开(公告)日：2012-02-02
申请号：US13182696
申请日：2011-07-14
申请人： Junya ONISHI , Shinobu Yamazaki , Kazuya Ishihara , Yushi Inoue , Yukio Tamai , Nobuyoshi Awaya
发明人： Junya ONISHI , Shinobu Yamazaki , Kazuya Ishihara , Yushi Inoue , Yukio Tamai , Nobuyoshi Awaya
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146
摘要： A variable resistance element that can stably perform a switching operation with a property variation being reduced by suppressing a sharp current that accompanies completion of forming process, and a non-volatile semiconductor memory device including the variable resistance element are realized. The non-volatile semiconductor memory device uses the variable resistance element for storing information in which a resistance changing layer is interposed between a first electrode and a second electrode, and a buffer layer is inserted between the first electrode and the resistance changing layer where a switching interface is formed. The buffer layer and the resistance changing layer include n-type metal oxides, and materials of the buffer layer and the resistance changing layer are selected such that energy at a bottom of a conduction band of the n-type metal oxide configuring the buffer layer is lower than that of the n-type metal oxide configuring the resistance changing layer.
摘要翻译：通过抑制伴随着成形处理的完成的尖锐电流，可以稳定地进行具有特性变化的开关动作的可变电阻元件，以及包括该可变电阻元件的非易失性半导体存储器件。非易失性半导体存储器件使用可变电阻元件来存储在第一电极和第二电极之间插入电阻变化层的信息，并且缓冲层插入在第一电极和电阻变化层之间，其中开关界面形成。缓冲层和电阻变化层包括n型金属氧化物，并且选择缓冲层和电阻变化层的材料，使得构成缓冲层的n型金属氧化物的导带的底部的能量为低于构成电阻变化层的n型金属氧化物。

10. 发明授权

US08530877B2 Non-volatile semiconductor device 有权
标题翻译：非易失性半导体器件
公开(公告)号：US08530877B2
公开(公告)日：2013-09-10
申请号：US13182696
申请日：2011-07-14
申请人： Junya Onishi , Shinobu Yamazaki , Kazuya Ishihara , Yushi Inoue , Yukio Tamai , Nobuyoshi Awaya
发明人： Junya Onishi , Shinobu Yamazaki , Kazuya Ishihara , Yushi Inoue , Yukio Tamai , Nobuyoshi Awaya
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146
摘要： A variable resistance element that can stably perform a switching operation with a property variation being reduced by suppressing a sharp current that accompanies completion of forming process, and a non-volatile semiconductor memory device including the variable resistance element are realized. The non-volatile semiconductor memory device uses the variable resistance element for storing information in which a resistance changing layer is interposed between a first electrode and a second electrode, and a buffer layer is inserted between the first electrode and the resistance changing layer where a switching interface is formed. The buffer layer and the resistance changing layer include n-type metal oxides, and materials of the buffer layer and the resistance changing layer are selected such that energy at a bottom of a conduction band of the n-type metal oxide configuring the buffer layer is lower than that of the n-type metal oxide configuring the resistance changing layer.
摘要翻译：通过抑制伴随着成形处理的完成的尖锐电流，可以稳定地进行具有特性变化的开关动作的可变电阻元件，以及包括该可变电阻元件的非易失性半导体存储器件。非易失性半导体存储器件使用可变电阻元件来存储在第一电极和第二电极之间插入电阻变化层的信息，并且缓冲层插入在第一电极和电阻变化层之间，其中开关界面形成。缓冲层和电阻变化层包括n型金属氧化物，并且选择缓冲层和电阻变化层的材料，使得构成缓冲层的n型金属氧化物的导带的底部的能量为低于构成电阻变化层的n型金属氧化物。

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