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1. 外观设计

USD347806S Automobile 失效
公开(公告)号：USD347806S
公开(公告)日：1994-06-14
申请号：US2591
申请日：1992-12-16
申请人： Yukio Kurosu , Kohichi Hirata , Seiji Someya , Tamotsu Okamoto , Mitsuhiro Onoue
设计人： Yukio Kurosu , Kohichi Hirata , Seiji Someya , Tamotsu Okamoto , Mitsuhiro Onoue

2. 外观设计

USD403989S Automobile 失效
公开(公告)号：USD403989S
公开(公告)日：1999-01-12
申请号：US79301
申请日：1997-11-12
申请人： Mitsuhiro Honda , Seiji Someya , Tamotsu Okamoto
设计人： Mitsuhiro Honda , Seiji Someya , Tamotsu Okamoto

3. 外观设计

USD381295S Automobile 失效
公开(公告)号：USD381295S
公开(公告)日：1997-07-22
申请号：US50824
申请日：1996-02-27
申请人： Daisuke Sawai , Tamotsu Okamoto , Masaru Hasegawa
设计人： Daisuke Sawai , Tamotsu Okamoto , Masaru Hasegawa

4. 发明授权

US08405037B2 Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus 有权
标题翻译：辐射检测器制造方法，放射线检测器和放射线照相设备
公开(公告)号：US08405037B2
公开(公告)日：2013-03-26
申请号：US12867229
申请日：2008-02-12
申请人： Satoshi Tokuda , Hiroyuki Kishihara , Masatomo Kaino , Tamotsu Okamoto
发明人： Satoshi Tokuda , Hiroyuki Kishihara , Masatomo Kaino , Tamotsu Okamoto
IPC分类号： G01T1/20
CPC分类号： H01L27/14659 , H01L27/14658 , H01L27/14696 , H01L31/115 , H01L31/1185
摘要： A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.
摘要翻译：本发明的放射线检测器包括其中保护晶粒缺陷水平的Cl掺杂的CdTe或Cl掺杂的CdZnTe多晶半导体膜。这是通过研磨掺杂有Cl的CdTe或CdZnTe晶体获得的，并且通过使用其粉末作为源来再次制备多晶半导体膜。多晶半导体膜中的晶界的缺陷水平也通过再次掺杂用Cl再次制备的多晶半导体膜来保护。这些特征使得能够制造具有优异的灵敏度和对辐射的响应的辐射检测器。

5. 发明申请

US20100029037A1 LIGHT OR RADIATION DETECTOR MANUFACTURING METHOD 有权
标题翻译：光或辐射检测器制造方法
公开(公告)号：US20100029037A1
公开(公告)日：2010-02-04
申请号：US12441312
申请日：2007-04-12
申请人： Satoshi Tokuda , Tamotsu Okamoto
发明人： Satoshi Tokuda , Tamotsu Okamoto
IPC分类号： H01L31/0368
CPC分类号： H01L27/14683 , G01T1/24 , H01L27/14634 , H01L31/1892 , Y02E10/50
摘要： In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
摘要翻译：在本发明的光或辐射检测器制造方法和光或辐射检测器中，当形成半导体时，半导体通过气相沉积在虚设基板上形成为预定的厚度，随后将虚拟基板替换为石墨基板是支撑衬底，并且半导体通过气相沉积继续在石墨衬底上形成。通过气相沉积在虚设基板上形成预定厚度的半导体的时间是初始状态，并且在虚设基板上形成不可避免地形成的缺陷膜。随后，在作为替换的石墨基板上形成不处于初始状态的半导体。这实现了具有比现有技术更高质量的半导体的检测器。以这种方式制造的半导体至少在厚度方向上连续地形成。

6. 发明申请

US20120093290A1 RADIATION DETECTOR MANUFACTURING METHOD, A RADIATION DETECTOR, AND A RADIOGRAPHIC APPARATUS 有权
标题翻译：辐射探测器制造方法，辐射探测器和放射性设备
公开(公告)号：US20120093290A1
公开(公告)日：2012-04-19
申请号：US13262098
申请日：2009-04-03
申请人： Satoshi Tokuda , Tamotsu Okamoto , Hiroyuki Kishihara , Masatomo Kaino , Toshinori Yoshimuta , Koichi Tanabe
发明人： Satoshi Tokuda , Tamotsu Okamoto , Hiroyuki Kishihara , Masatomo Kaino , Toshinori Yoshimuta , Koichi Tanabe
IPC分类号： G01N23/04 , H01L31/18 , H01L31/0296
CPC分类号： G01T1/24 , H01L31/115
摘要： According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.
摘要翻译：根据辐射检测器的制造方法，本发明的放射线检测器和射线照相设备采用Cl掺杂的CdZnTe作为转化层，Cl浓度设定为1ppm〜3ppm（重量），Zn浓度设定为1 mol％至5mol％。这可以形成辐射探测器最佳的转换层。因此，可以提供放射线检测器制造方法，放射线检测器和射线照相设备，其可以通过适当浓度的Cl掺杂来保护晶粒边界的缺陷水平，并且可以进一步保持对辐射的积分灵敏度，同时减少漏电流，通过适当浓度的Zn掺杂。

7. 外观设计

USD373334S Automobile 失效
公开(公告)号：USD373334S
公开(公告)日：1996-09-03
申请号：US38492
申请日：1995-05-04
申请人： Mitsuhiro Honda , Tamotsu Okamoto
设计人： Mitsuhiro Honda , Tamotsu Okamoto

8. 发明授权

US07736941B2 Light or radiation detector manufacturing method 有权
标题翻译：光或辐射探测器的制造方法
公开(公告)号：US07736941B2
公开(公告)日：2010-06-15
申请号：US12441312
申请日：2007-04-12
申请人： Satoshi Tokuda , Tamotsu Okamoto
发明人： Satoshi Tokuda , Tamotsu Okamoto
IPC分类号： H01L21/20
CPC分类号： H01L27/14683 , G01T1/24 , H01L27/14634 , H01L31/1892 , Y02E10/50
摘要： In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
摘要翻译：在本发明的光或辐射检测器制造方法和光或辐射检测器中，当形成半导体时，通过气相沉积在半导体基板上以预定的厚度形成半导体，然后用虚拟基板代替石墨基板是支撑衬底，并且半导体通过气相沉积继续在石墨衬底上形成。通过气相沉积在虚设基板上形成预定厚度的半导体的时间是初始状态，并且在虚设基板上形成不可避免地形成的缺陷膜。随后，在作为替换的石墨基板上形成不处于初始状态的半导体。这实现了具有比现有技术更高质量的半导体的检测器。以这种方式制造的半导体至少在厚度方向上连续地形成。

9. 外观设计

USD578437S1 Automobile and/or replica thereof 有权
公开(公告)号：USD578437S1
公开(公告)日：2008-10-14
申请号：US29274707
申请日：2007-05-17
申请人： Saburo Nishihata , Tamotsu Okamoto , Kazuyuki Watabe
设计人： Saburo Nishihata , Tamotsu Okamoto , Kazuyuki Watabe

10. 外观设计

USD423410S Automobile 失效
公开(公告)号：USD423410S
公开(公告)日：2000-04-25
申请号：US104659
申请日：1999-05-10
申请人： Kazuhiro Ichinose , Tamotsu Okamoto
设计人： Kazuhiro Ichinose , Tamotsu Okamoto

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