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    • 10. 发明授权
    • SiC field effect transistor
    • SiC场效应晶体管
    • US09219127B2
    • 2015-12-22
    • US13518650
    • 2010-12-24
    • Yuki Nakano
    • Yuki Nakano
    • H01L29/78H01L29/66H01L29/165H01L29/417H01L29/16H01L29/43H01L29/47H01L29/861H01L29/872
    • H01L29/7813H01L29/1608H01L29/165H01L29/41741H01L29/41766H01L29/43H01L29/47H01L29/66068H01L29/7803H01L29/7806H01L29/8618H01L29/872
    • A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
    • SiC场效应晶体管包括:SiC半导体层; 以及包括半导体层中的第一导电型源极区域的MIS晶体管结构,与源极区域接触的半导体层中的第二导电类型体区域,与体区域接触的半导体层中的第一导电型漂移区域 与所述体区相对的栅极电极,其具有插入在所述电极和所述体区之间的栅极绝缘膜,用于在所述体区中形成沟道,以使所述电流在所述漂移区域和所述源极区域之间流动,以及阻挡层形成层 与漂移区接触以通过与漂移区的接触而形成结屏障,所述结屏障低于由身体区域和漂移区域之间的结点限定的体二极管的扩散电位。