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1. 发明授权

US08357577B2 Manufacturing method of semiconductor device having vertical type transistor 失效
标题翻译：具有垂直型晶体管的半导体器件的制造方法
公开(公告)号：US08357577B2
公开(公告)日：2013-01-22
申请号：US13253100
申请日：2011-10-05
申请人： Yuki Munetaka , Yoshihiro Takaishi
发明人： Yuki Munetaka , Yoshihiro Takaishi
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L29/42356 , H01L29/4238 , H01L29/66666
摘要： A manufacturing method of a semiconductor device includes the steps of: forming an insulating pillar on the main surface of a silicon substrate; forming a protective film on the side surface of the insulating pillar; forming a silicon pillar on the main surface of the silicon substrate; forming a gate insulating film on the side surface of the silicon pillar; and forming first and second gate electrodes so as to contact each other and so as to cover the side surfaces of the silicon pillar and insulating pillar, respectively. According to the present manufacturing method, the protective film is formed on the side surface of the insulating pillar as a dummy pillar, thus preventing the dummy pillar from being eroded when the silicon pillar for channel is processed into a transistor. Therefore, it is possible to reduce a probability of occurrence of gate electrode disconnection.
摘要翻译：半导体器件的制造方法包括以下步骤：在硅衬底的主表面上形成绝缘柱; 在绝缘柱的侧面上形成保护膜; 在硅衬底的主表面上形成硅柱; 在所述硅柱的侧面上形成栅极绝缘膜; 以及形成第一和第二栅电极以彼此接触并分别覆盖硅柱和绝缘柱的侧表面。根据本制造方法，在绝缘柱的侧面上形成保护膜作为虚拟柱，从而防止了当通道的硅柱被加工成晶体管时，伪柱被腐蚀。因此，可以降低栅电极断开的发生概率。

2. 发明申请

US20120100682A1 Manufactruing method of semiconductor device having vertical type transistor 失效
标题翻译：具有垂直型晶体管的半导体器件的制造方法
公开(公告)号：US20120100682A1
公开(公告)日：2012-04-26
申请号：US13253100
申请日：2011-10-05
申请人： Yuki Munetaka , Yoshihiro Takaishi
发明人： Yuki Munetaka , Yoshihiro Takaishi
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L29/42356 , H01L29/4238 , H01L29/66666
摘要： A manufacturing method of a semiconductor device includes the steps of: forming an insulating pillar on the main surface of a silicon substrate; forming a protective film on the side surface of the insulating pillar; forming a silicon pillar on the main surface of the silicon substrate; forming a gate insulating film on the side surface of the silicon pillar; and forming first and second gate electrodes so as to contact each other and so as to cover the side surfaces of the silicon pillar and insulating pillar, respectively. According to the present manufacturing method, the protective film is formed on the side surface of the insulating pillar as a dummy pillar, thus preventing the dummy pillar from being eroded when the silicon pillar for channel is processed into a transistor. Therefore, it is possible to reduce a probability of occurrence of gate electrode disconnection.
摘要翻译：半导体器件的制造方法包括以下步骤：在硅衬底的主表面上形成绝缘柱; 在绝缘柱的侧面上形成保护膜; 在硅衬底的主表面上形成硅柱; 在所述硅柱的侧面上形成栅极绝缘膜; 以及形成第一和第二栅电极以彼此接触并分别覆盖硅柱和绝缘柱的侧表面。根据本制造方法，在绝缘柱的侧面上形成保护膜作为虚拟柱，从而防止了当通道的硅柱被加工成晶体管时，伪柱被腐蚀。因此，可以降低栅电极断开的发生概率。

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