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1. 发明申请

US20120126283A1 HIGH POWER, HIGH EFFICIENCY AND LOW EFFICIENCY DROOP III-NITRIDE LIGHT-EMITTING DIODES ON SEMIPOLAR SUBSTRATES 审中-公开
标题翻译：高功率，高效率和低效率的三极发光二极管在二极体基板上
公开(公告)号：US20120126283A1
公开(公告)日：2012-05-24
申请号：US13283259
申请日：2011-10-27
申请人： Yuji Zhao , Junichi Sonoda , Chih-Chien Pan , Shinichi Tanaka , Steven P. DenBaars , Shuji Nakamura
发明人： Yuji Zhao , Junichi Sonoda , Chih-Chien Pan , Shinichi Tanaka , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075 , H01L33/32
摘要： A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.
摘要翻译：在衬底的半极{20-2-1}平面上生长的III族氮化物发光二极管，其特征在于高功率，高效率和低效率下垂。

2. 发明申请

US20120126198A1 LIGHT EMITTING DIODE FOR DROOP IMPROVEMENT 审中-公开
标题翻译：发光二极管驱动改进
公开(公告)号：US20120126198A1
公开(公告)日：2012-05-24
申请号：US13283193
申请日：2011-10-27
申请人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Junichi Sonoda , Hung Tse Chen , Chih-Chien Pan
发明人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Junichi Sonoda , Hung Tse Chen , Chih-Chien Pan
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/007 , H01L33/04 , H01L33/20
摘要： A light emitting diode (LED) device structure with a reduced Droop effect, and a method for fabricating the LED device structure. The LED is a III-nitride-based LED having an active layer or emitting layer comprised of a multi-quantum-well (MQW) structure, wherein there are eight or more quantum wells (QWs) in the MQW structure, and more preferably, at least nine QWs in the MQW structure. Moreover, the QWs in the MQW structure are grown at temperatures different from barrier layers in the MQW structure, wherein the barrier layers in the MQW structure are grown a temperatures at least 40° C. higher than the QWs in the MQW structure.
摘要翻译：具有降低的Droop效应的发光二极管（LED）器件结构以及制造LED器件结构的方法。 LED是具有由多量子阱（MQW）结构构成的有源层或发射层的III族氮化物基LED，其中在MQW结构中存在八个或更多个量子阱（QW），更优选地， MQW结构中至少有九个QW。此外，MQW结构中的QWs在不同于MQW结构中的阻挡层的温度下生长，其中MQW结构中的阻挡层的生长比MQW结构中的QW高至少40℃。

3. 发明申请

US20110103077A1 LIGHT EMITTING DIODE PACKAGING METHOD WITH HIGH LIGHT EXTRACTION AND HEAT DISSIPATION USING A TRANSPARENT VERTICAL STAND STRUCTURE 审中-公开
标题翻译：使用透明垂直结构的高光提取和散热的发光二极管封装方法
公开(公告)号：US20110103077A1
公开(公告)日：2011-05-05
申请号：US12908793
申请日：2010-10-20
申请人： Chih-Chien Pan , Jun Seok Ha , Steven P. DenBaars , Shuji Nakamura , Junichi Sonoda
发明人： Chih-Chien Pan , Jun Seok Ha , Steven P. DenBaars , Shuji Nakamura , Junichi Sonoda
IPC分类号： F21V29/00 , H05K13/00
CPC分类号： H01L33/483 , H01L33/54 , H01L2224/45144 , H01L2224/48091 , H01L2933/0091 , Y10T29/49002 , H01L2924/00014 , H01L2924/00
摘要： A packaging method for light emitting diodes provides both high light extraction and heat dissipation using a transparent vertical stand structure. A light emitting diode (LED) is attached to a vertical stand structure for supporting the LED, wherein the LED is bonded to the vertical stand structure, so that one of the LED's sides faces vertically upwards, another of the LED's sides faces vertically downwards, a top surface of the LED faces horizontally sideways in one direction, and a bottom surface of the LED faces horizontally sideways in another direction. The vertical stand structure comprises a connecting stem between the LED and a header, and is made of a material that provides for heat dissipation and may also be transparent to light generated in the LED, such as sapphire or zinc oxide. The LED and the vertical stand structure may be encapsulated within a mold.
摘要翻译：用于发光二极管的封装方法使用透明的垂直支架结构提供高光提取和散热。发光二极管（LED）附接到用于支撑LED的垂直支架结构，其中LED结合到垂直支架结构，使得LED的一个侧面垂直向上，另一个LED侧面垂直向下， LED的顶面在一个方向上水平地水平地横向，并且LED的底表面在另一个方向上水平地侧向地面对。垂直支架结构包括在LED和集管之间的连接杆，并且由提供散热的材料制成，并且还可以对诸如蓝宝石或氧化锌的LED中产生的光透明。 LED和垂直支架结构可以封装在模具内。

4. 发明申请

US20090141502A1 LIGHT OUTPUT ENHANCED GALLIUM NITRIDE BASED THIN LIGHT EMITTING DIODE 审中-公开
标题翻译：光输出增强型氮化钠基底层发光二极管
公开(公告)号：US20090141502A1
公开(公告)日：2009-06-04
申请号：US12325939
申请日：2008-12-01
申请人： Junichi Sonoda , Shuji Nakamura , Kenji Iso , Steven P. DenBaars , Makoto Saito
发明人： Junichi Sonoda , Shuji Nakamura , Kenji Iso , Steven P. DenBaars , Makoto Saito
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/44
摘要： A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.
摘要翻译：一种基于氮化镓（GaN）的发光器件，其中所述器件包括第一表面和第二表面，并且所述第一表面和第二表面的厚度小于100微米，优选小于20微米。第一表面可以是粗糙的或有纹理的。银或银合金可以沉积在第二表面上。装置的第二表面可以结合到永久基板。

5. 发明申请

US20060057817A1 Semiconductor device, its manufacture method and electronic component unit 有权
标题翻译：半导体器件，其制造方法和电子元件单元
公开(公告)号：US20060057817A1
公开(公告)日：2006-03-16
申请号：US11204527
申请日：2005-08-16
申请人： Junichi Sonoda , Seiichiro Kobayashi , Kazuyuki Yoshimizu
发明人： Junichi Sonoda , Seiichiro Kobayashi , Kazuyuki Yoshimizu
IPC分类号： H01L21/30 , H01L21/00
CPC分类号： H01L33/405 , H01L23/4827 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L33/38 , H01L33/62 , H01L2224/29124 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/83075 , H01L2224/83203 , H01L2224/92247 , H01L2924/01322 , H01L2924/12036 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/0105
摘要： A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
摘要翻译：在相对的主表面上具有第一和第二电极的LED芯片通过复合粘合层与基板结合。当将包括该基板的支撑基板和第一接合层接合到包括LED，第一电极和第二接合层的层叠结构时，形成复合接合层。第一或第二粘合层含有至少部分共晶组成。支撑基板和层叠结构中的至少一个包括扩散材料层。复合粘合层以共晶材料含量与另一种混合形成第一混合物的方式形成，并且将第一混合物与扩散材料混合以形成熔点高于熔点的熔点的第二混合物第一个混合物。

6. 发明授权

US07666692B2 Semiconductor device, its manufacture method and electronic component unit 有权
标题翻译：半导体器件，其制造方法和电子元件单元
公开(公告)号：US07666692B2
公开(公告)日：2010-02-23
申请号：US12146236
申请日：2008-06-25
申请人： Junichi Sonoda , Seiichiro Kobayashi , Kazuyuki Yoshimizu
发明人： Junichi Sonoda , Seiichiro Kobayashi , Kazuyuki Yoshimizu
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L23/4827 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L33/38 , H01L33/62 , H01L2224/29124 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/83075 , H01L2224/83203 , H01L2224/92247 , H01L2924/01322 , H01L2924/12036 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/0105
摘要： A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.
摘要翻译：在相对的主表面上具有第一和第二电极的LED芯片通过复合粘合层与基板结合。当将包括该基板的支撑基板和第一接合层接合到包括LED，第一电极和第二接合层的层叠结构时，形成复合接合层。第一或第二粘合层含有至少部分共晶组成。支撑基板和层叠结构中的至少一个包括扩散材料层。复合粘合层以共晶材料含量与另一种混合形成第一混合物的方式形成，并且将第一混合物与扩散材料混合以形成熔点高于熔点的熔点的第二混合物第一个混合物。

7. 发明授权

US08964939B2 Radiation detection device, radiation image acquiring system, radiation inspection system, and radiation detection method 有权
标题翻译：辐射检测装置，放射线图像采集系统，辐射检测系统和放射线检测方法
公开(公告)号：US08964939B2
公开(公告)日：2015-02-24
申请号：US13534426
申请日：2012-06-27
申请人： Toshiyasu Suyama , Tadashi Maruno , Toshihide Sasaki , Junichi Sonoda , Shinji Takihi
发明人： Toshiyasu Suyama , Tadashi Maruno , Toshihide Sasaki , Junichi Sonoda , Shinji Takihi
IPC分类号： H05G1/64 , G01N23/087 , G01N23/04 , G01V5/00
CPC分类号： G01N23/046 , G01N23/04 , G01N2223/1016 , G01N2223/306 , G01N2223/3307 , G01V5/0008 , G01V5/0016 , G01V5/0041
摘要： A radiation image acquiring system is provided. An X-ray image acquiring system irradiates X-rays to a subject from an X-ray source, and detects X-rays transmitted through the subject. The X-ray image acquiring system includes a first detector for detecting X-rays that are transmitted through the subject to generate first image data, a second detector arranged in parallel to the first detector with a dead zone region sandwiched therebetween, for detecting X-rays that are transmitted through the subject to generate second image data, and a timing control section for controlling detection timing of the second detector based on a dead zone width of the dead zone region so that first image data to be generated by the first detector and second image data to be generated by the second detector mutually correspond.
摘要翻译：提供了一种放射图像获取系统。 X射线图像获取系统从X射线源向被检体照射X射线，并且检测通过被检体传播的X射线。 X射线图像获取系统包括：第一检测器，用于检测通过被摄体透射的X射线以产生第一图像数据;第二检测器，与第一检测器平行布置，其中夹有死区区域，用于检测X射线; 通过对象发送的光线以产生第二图像数据;以及定时控制部分，用于基于死区区域的死区宽度来控制第二检测器的检测定时，使得由第一检测器生成的第一图像数据和由第二检测器生成的第二图像数据相互对应。

8. 发明申请

US20130044862A1 RADIATION DETECTION DEVICE, RADIATION IMAGE ACQUIRING SYSTEM, AND METHOD FOR DETECTING RADIATION 有权
标题翻译：辐射检测装置，辐射图像获取系统和用于检测辐射的方法
公开(公告)号：US20130044862A1
公开(公告)日：2013-02-21
申请号：US13600516
申请日：2012-08-31
申请人： Toshiyasu SUYAMA , Tadashi Maruno , Toshihide Sasaki , Junichi Sonoda , Shinji Takihi
发明人： Toshiyasu SUYAMA , Tadashi Maruno , Toshihide Sasaki , Junichi Sonoda , Shinji Takihi
IPC分类号： G01N23/04
CPC分类号： G01N23/04 , G01T1/00
摘要： An X-ray image acquiring system capable of improving the detection accuracy of a foreign substance contained in a subject is provided. An X-ray image acquiring system irradiates X-rays to a subject having a predetermined thickness from an X-ray source, and detects X-rays transmitted through the subject in a plurality of energy ranges. The X-ray image acquiring system includes a low-energy detector for detecting, in a low-energy range, X-rays having been transmitted through a region R1 extending in a thickness direction within the subject, a high-energy detector for detecting, in a high-energy range, X-rays having been transmitted through a region R2 extending in a thickness direction within the subject, and a timing control section for controlling detection timing of X-rays in the low-energy detector and the high-energy detector so that an inspecting region located at a predetermined site within the subject is included in the region R1 and the region R2.
摘要翻译：提供能够提高被检体中所含有的异物的检测精度的X射线图像获取系统。 X射线图像获取系统从X射线源向具有预定厚度的被摄体照射X射线，并且以多个能量范围来检测通过被摄体发射的X射线。 X射线图像获取系统包括：低能量检测器，用于在低能量范围内检测通过在被检体内沿厚度方向延伸的区域R1透射的X射线;高能量检测器，在高能量范围内，通过在被检体内沿厚度方向延伸的区域R2的X射线，以及用于控制低能量检测器中的X射线的检测定时和高能量的定时控制部检测器，使得位于对象内的预定位置的检查区域包括在区域R1和区域R2中。

9. 发明授权

US07745843B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07745843B2
公开(公告)日：2010-06-29
申请号：US11904290
申请日：2007-09-26
申请人： Toshihiko Baba , Takuya Kazama , Junichi Sonoda
发明人： Toshihiko Baba , Takuya Kazama , Junichi Sonoda
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L2933/0083
摘要： A light emitting device with an increased light extraction efficiency includes a two-dimensional periodic structure in a surface thereof and has two layers that together form an asymmetric refractive index distribution with respect to the active layer, which is in between the two layers. The light emitting device includes a substrate layer, a first layer, an active layer and a second layer that are stacked sequentially. The first layer includes at least one layer, including a semiconductor cladding layer of a first conductivity type. At least one layer of the first layer has a refractive index that is lower than a refractive index of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer. Each constituent layer of the second layer has a refractive index that is lower than the refractive index of the active layer.
摘要翻译：具有增加的光提取效率的发光器件包括其表面中的二维周期性结构，并且具有两层，其一起形成相对于两层之间的有源层的不对称折射率分布。发光器件包括依次堆叠的衬底层，第一层，有源层和第二层。第一层包括至少一层，包括第一导电类型的半导体覆层。第一层的至少一层具有低于有源层的折射率的折射率，并且低于与有源层相邻的第二层的折射率。第二层的每个构成层的折射率低于有源层的折射率。

10. 发明申请

US20100119038A1 RADIATION DETECTION DEVICE, RADIATION IMAGE ACQUIRING SYSTEM, RADIATION INSPECTION SYSTEM, AND RADIATION DETECTION METHOD 有权
标题翻译：辐射检测装置，辐射图像获取系统，辐射检查系统和辐射检测方法
公开(公告)号：US20100119038A1
公开(公告)日：2010-05-13
申请号：US12615305
申请日：2009-11-10
申请人： Toshiyasu Suyama , Tadashi Maruno , Toshihide Sasaki , Junichi Sonoda , Shinji Takihi
发明人： Toshiyasu Suyama , Tadashi Maruno , Toshihide Sasaki , Junichi Sonoda , Shinji Takihi
IPC分类号： G01N23/04
CPC分类号： G01N23/046 , G01N23/04 , G01N2223/1016 , G01N2223/306 , G01N2223/3307 , G01V5/0008 , G01V5/0016 , G01V5/0041
摘要： A radiation image acquiring system that improves the detection accuracy of a foreign substance etc., in a subject is provided. An X-ray image acquiring system 1 irradiates X-rays to a subject S from an X-ray source, and detects X-rays in a plurality of energy ranges transmitted through the subject S. The X-ray image acquiring system 1 includes a low-energy detector 32 for detecting X-rays in a low-energy range that is transmitted through the subject S to generate low-energy image data, a high-energy detector 42 arranged in parallel to the low-energy detector 32 with a dead zone region 82 sandwiched therebetween, for detecting X-rays in a high-energy range that is transmitted through the subject S to generate high-energy image data, and a timing control section 50 for controlling detection timing of the high-energy detector 42 based on a dead zone width NW of the dead zone region 82 so that low-energy image data to be generated by the low-energy detector 32 and high-energy image data to be generated by the high-energy detector 42 mutually correspond.
摘要翻译：提供了提高被检体中异物等的检测精度的放射线图像获取系统。 X射线图像获取系统1从X射线源向对象S照射X射线，并且检测通过被检体S透射的多个能量范围中的X射线.X射线图像获取系统1包括：低能量检测器32，用于检测通过被摄体S传输的低能量范围内的X射线以产生低能量图像数据;高能量检测器42，其与死能器件的低能量检测器32并联布置夹持在其间的区域区域82，用于检测通过被检体S透射的高能量范围内的X射线以产生高能量图像数据;以及定时控制部分50，用于基于高能量检测器42的检测定时来控制在死区区域82的死区宽度NW上，使得由低能量检测器32产生的低能量图像数据和由高能量检测器42产生的高能量图像数据相互对应。

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