专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09534535B2 Four-stroke engine 有权
标题翻译：四冲程发动机
公开(公告)号：US09534535B2
公开(公告)日：2017-01-03
申请号：US13668570
申请日：2012-11-05
申请人： Yuji Takahashi , Yuki Nakamura , Masaki Kurimoto , Masayuki Iwase
发明人： Yuji Takahashi , Yuki Nakamura , Masaki Kurimoto , Masayuki Iwase
IPC分类号： F02B25/06 , F02B63/02 , F02B75/02
CPC分类号： F02B63/02 , F02B2075/027
摘要： A four-stroke engine for a working machine with a rod is provided, where a tool is attached to one end of the rod in a longitudinal direction and the four-stroke engine is fixed to the other end of the rod in use. The four-stroke engine includes: an oil circulation pathway; and a gas-liquid separating chamber configured to separate oil from blowby gas. The gas-liquid separating chamber includes: an inflow part into which the blowby gas is introduced from the oil circulation pathway; oil discharge parts configured to flow the oil separated from the blowby gas back to the oil circulation pathway; and a blowby gas discharge part configured to discharge the blowby gas not containing oil mist from the gas-liquid separating chamber and supplies the blowby gas to an intake passageway to a combustion chamber.
摘要翻译：提供一种用于具有杆的工作机械的四冲程发动机，其中工具沿纵向方向附接到杆的一端，并且四冲程发动机在使用中固定到杆的另一端。四冲程发动机包括：油循环通道; 以及气液分离室，其构造成将油与窜气分离。气液分离室包括：从油循环路径引入排气的流入部; 排油部件，其构造成使从所述窜气返回到所述油循环路径的油分离; 以及排气部，其构成为从气液分离室排出不含油雾的排气，并将排气供给到进气通路到燃烧室。

2. 发明授权

US11315961B2 Field-effect transistor, method for producing same, display element, display device, and system 有权
公开(公告)号：US11315961B2
公开(公告)日：2022-04-26
申请号：US16486224
申请日：2018-03-15
申请人： Sadanori Arae , Yuichi Ando , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Naoyuki Ueda , Ryoichi Saotome , Minehide Kusayanagi
发明人： Sadanori Arae , Yuichi Ando , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Naoyuki Ueda , Ryoichi Saotome , Minehide Kusayanagi
IPC分类号： H01L27/12 , H01L29/417
摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

3. 发明授权

US10204799B2 Method for manufacturing a field-effect transistor 有权
公开(公告)号：US10204799B2
公开(公告)日：2019-02-12
申请号：US15376895
申请日：2016-12-13
申请人： Minehide Kusayanagi , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae
发明人： Minehide Kusayanagi , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae
IPC分类号： H01L21/44 , H01L29/24 , H01L29/45 , H01L29/66 , H01L21/477 , H01L29/786
摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

4. 发明授权

US10020374B2 Field-effect transistor, semiconductor memory display element, image display device, and system 有权
公开(公告)号：US10020374B2
公开(公告)日：2018-07-10
申请号：US13515463
申请日：2010-12-22
申请人： Yuji Sone , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe
发明人： Yuji Sone , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe
IPC分类号： H01L29/04 , H01L29/49 , H01L29/786 , H01L29/788 , G09G3/20 , G09G3/3233 , G09G3/36 , H01L27/108 , H01L27/32 , G02F1/1368 , G02F1/163
CPC分类号： H01L29/4908 , G02F1/1368 , G02F2001/1635 , G09G3/20 , G09G3/3233 , G09G3/3648 , H01L27/10873 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/3248 , H01L27/3262 , H01L29/41733 , H01L29/7869 , H01L29/7881
摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

5. 发明授权

US08915219B2 Working machine engine and working machine using the same 有权
标题翻译：工作机发动机和工作机使用相同
公开(公告)号：US08915219B2
公开(公告)日：2014-12-23
申请号：US13150732
申请日：2011-06-01
申请人： Yuki Nakamura , Yasuyuki Sakakibara
发明人： Yuki Nakamura , Yasuyuki Sakakibara
IPC分类号： F01P7/02 , F01P5/06 , F02B63/02 , F02B75/16 , F01P5/02
CPC分类号： F01P5/06 , F01P2005/025 , F02B63/02 , F02B75/16
摘要： A working machine engine is provided. The air flowing through the front side cooling air flow passage and the upper side cooling air flow passage which are provided in the front side and the upper side of the casing, respectively, and the air flowing through the auxiliary air flow passage provided in the back side of the casing join together near the opening. By this means, the air flowing through the auxiliary air flow passage can change the direction of the air flowing lengthwise through the front side cooling air flow passage and the upper side cooling air flow passage.
摘要翻译：提供工作机器引擎。分别设置在壳体的前侧和上侧的流过前侧冷却风流路和上侧冷却风流路的空气以及设置在后侧的辅助空气流路中流动的空气外壳的一侧在开口附近连接在一起。通过这种方式，流过辅助空气流动通道的空气可以改变通过前侧冷却空气流动通道和上侧冷却空气流动通道纵向流动的空气的方向。

6. 发明申请

US20140353648A1 P-TYPE OXIDE, COMPOSITION FOR PRODUCING P-TYPE OXIDE, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 有权
标题翻译： P型氧化物，用于生产P型氧化物的组合物，用于生产P型氧化物的方法，半导体元件，显示元件，图像显示装置和系统
公开(公告)号：US20140353648A1
公开(公告)日：2014-12-04
申请号：US14360791
申请日：2012-11-28
申请人： Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Mikiko Takada , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome
发明人： Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Mikiko Takada , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome
IPC分类号： H01L29/24 , H01L27/32 , H01L21/02 , H01L27/12 , G02F1/1368 , H01L29/786 , H01L29/861
CPC分类号： H01L29/247 , C01G19/00 , C01G30/00 , C01P2002/72 , G02F1/1368 , H01L21/02422 , H01L21/02483 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02623 , H01L21/02628 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L27/3244 , H01L29/7869 , H01L29/78693 , H01L29/861
摘要： To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.
摘要翻译：提供包括氧化物的p型氧化物，其中氧化物包括：Cu; 和选自p族元素的并且可以处于平衡状态的元素M作为离子存在，其中平衡状态是其中存在p的全部电子的状态 - 最外壳的眶骨丢失，并且损失最外壳的全部电子的状态，并且其中p型氧化物是无定形的。

7. 发明授权

US08860146B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08860146B2
公开(公告)日：2014-10-14
申请号：US13052014
申请日：2011-03-18
申请人： Yuki Nakamura , Takehito Ikimura
发明人： Yuki Nakamura , Takehito Ikimura
IPC分类号： H01L27/04 , H01L27/06
CPC分类号： H01L27/0629
摘要： According to one embodiment, a semiconductor device including a field-effect transistor, and a resistance element connected between a gate electrode of the field effect transistor and a connection point connected between a back gate electrode of the field effect transistor and one of source-drain regions of the field effect transistor, a voltage being applied between the other of the source-drain regions and the gate electrode.
摘要翻译：根据一个实施例，包括场效应晶体管的半导体器件和连接在场效应晶体管的栅极之间的电阻元件和连接在场效应晶体管的背栅极之间的连接点和源极 - 漏极场效应晶体管的区域，电压施加在源极 - 漏极区域中的另一个和栅电极之间。

8. 发明授权

US08454249B2 Focal plane shutter for cameras and digital camera provided with the same 有权
标题翻译：用于相机和数码相机的焦平面快门提供相同的
公开(公告)号：US08454249B2
公开(公告)日：2013-06-04
申请号：US13404357
申请日：2012-02-24
申请人： Kohei Nishimura , Yuki Nakamura , Yusuke Togo
发明人： Kohei Nishimura , Yuki Nakamura , Yusuke Togo
IPC分类号： G03B9/08
CPC分类号： G03B9/36 , G03B9/20
摘要： A second blade-driving mechanism includes second blade-driving first member and second blade-driving second member, only the second blade-driving second member is rotated against elastic force of a blade-driving spring while the second blade-driving first member engages and is locked by a locking member at start of cocking operation of the cocking member to keep a second blade covering an exposure aperture, and the second blade-driving first member is disengaged from locking member at final stage of cocking operation, so the second blade-driving first member can be rotated by elastic force of a second blade-cocking spring and the second blade is made to open the exposure aperture. Staring cocking operation of a focal plane shutter is possible irrespective of the length of time during which imaging information can be transferred from an image sensor to storage via an information-processing circuit.
摘要翻译：第二叶片驱动机构包括第二叶片驱动第一构件和第二叶片驱动第二构件，只有第二叶片驱动第二构件抵抗叶片驱动弹簧的弹力而旋转，同时第二叶片驱动第一构件接合，在起动构件的起动操作开始时被锁定构件锁定以保持第二刀片覆盖曝光孔，并且第二刀片驱动第一构件在起动操作的最后阶段与锁定构件脱离接合，驱动第一构件可以通过第二叶片弹簧的弹力旋转，并且使第二叶片打开曝光孔。与成像信息可以经由信息处理电路从图像传感器传送到存储的时间长度无关，可以进行焦平面快门的起弧操作。

9. 发明授权

US08067080B2 Optical recording medium 失效
标题翻译：光记录介质
公开(公告)号：US08067080B2
公开(公告)日：2011-11-29
申请号：US12282821
申请日：2007-03-14
申请人： Yuki Nakamura , Masahiro Hayashi , Satoshi Mizukami , Tohru Yashiro
发明人： Yuki Nakamura , Masahiro Hayashi , Satoshi Mizukami , Tohru Yashiro
IPC分类号： G11B7/24
CPC分类号： G11B7/2492 , G11B7/24038 , G11B7/245 , G11B7/246 , G11B7/2467 , G11B7/2472 , G11B7/248 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/2536 , G11B7/2578 , G11B7/259 , G11B2007/24612 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716
摘要： Provided is an optical recording medium including, in sequence: a first substrate; a first information recording layer; an intermediate layer; a second information recording layer; and a second substrate having wobble convex portions on its surface, wherein information is recorded on or reproduced from the first information recording layer and second information recording layer by irradiation with a laser beam from a first information recording layer side, wherein the second information recording layer includes, over the second substrate, a light reflective layer, a dye recording layer, and an inorganic protective layer, wherein the inorganic protective layer has a thickness of 3 nm to 40 nm, and wherein the dye recording layer includes a cyanine compound expressed by General Formula (I) and a squarylium compound expressed by General Formula (II):
摘要翻译：提供了一种光学记录介质，其依次包括：第一基板; 第一信息记录层; 中间层第二信息记录层; 以及在其表面上具有摆动凸部的第二基板，其中通过用来自第一信息记录层侧的激光束的照射将信息记录在第一信息记录层和第二信息记录层上或从第一信息记录层再现，其中第二信息记录层在第二基板上包括光反射层，染料记录层和无机保护层，其中无机保护层的厚度为3nm至40nm，并且其中染料记录层包括由通式（I）和通式（II）表示的方酸化合物：

10. 发明申请

US20110128275A1 FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 审中-公开
标题翻译：场效应晶体管，显示元件，图像显示装置和系统
公开(公告)号：US20110128275A1
公开(公告)日：2011-06-02
申请号：US12737688
申请日：2009-08-13
申请人： Naoyuki Ueda , Yukiko Abe , Hiroshi Kondo , Yuki Nakamura , Yuji Sone
发明人： Naoyuki Ueda , Yukiko Abe , Hiroshi Kondo , Yuki Nakamura , Yuji Sone
IPC分类号： G06F3/038 , H01L33/28 , H01L51/52
CPC分类号： H01L29/7869 , G09G3/3258 , G09G3/3655 , G09G2320/043 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/78693
摘要： A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.
摘要翻译：场效应晶体管包括施加栅极电压的栅电极; 源电极和漏电极，用于响应于栅极电压获得电流; 与源电极和漏电极相邻设置的有源层，由以镁和铟为主要成分的氧化物半导体构成; 以及设置在栅电极和有源层之间的栅极绝缘层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式