专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130302021A1 FLUID HEATING-COOLING CYLINDER DEVICE 有权
标题翻译：流体加热冷却缸装置
公开(公告)号：US20130302021A1
公开(公告)日：2013-11-14
申请号：US13616517
申请日：2012-09-14
申请人： Yuji FURUMURA , Naomi MURA , Shinji NISHIHARA , Noriyoshi SHIMIZU
发明人： Yuji FURUMURA , Naomi MURA , Shinji NISHIHARA , Noriyoshi SHIMIZU
IPC分类号： F24H3/04
CPC分类号： F24H3/062 , F22B1/28 , F22B1/288 , F24H1/121 , F24H9/0015 , F24H9/0057 , F24H9/1818 , F24H9/1863 , F24H2250/02 , H05B3/42 , H05B2203/022
摘要： Provided is a fluid heating device that is small in size and capable of heating a large flow of gas or liquid at a low cost. A flow path in which no backwater is produced is provided by providing grooved flow paths of a fluid are provided over an outer side surface of a metallic circular cylinder such that a fluid passing through a narrowed one of the flow paths impinges perpendicularly against a wall of the next flow path. This allows instantaneous heat exchange within a small space, and makes manufacturing of such a structure simple.
摘要翻译：提供了一种尺寸小且能够以低成本加热大量气体或液体的流体加热装置。通过在金属圆柱体的外侧表面上设置有沟槽的流动路径来提供不产生回水的流动路径，使得通过狭窄的一个流动路径的流体垂直地撞击到下一个流程。这允许在小空间内的瞬时热交换，并且使得这种结构的制造变得简单。

2. 发明申请

US20100270654A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, DRY-ETCHING PROCESS, METHOD FOR MAKING ELECTRICAL CONNECTIONS, AND ETCHING APPARATUS 失效
标题翻译：半导体器件及其制造方法，干蚀工艺，制造电气连接的方法和蚀刻装置
公开(公告)号：US20100270654A1
公开(公告)日：2010-10-28
申请号：US12830995
申请日：2010-07-06
申请人： Toshio HAYASHI , Yasuhiro MORIKAWA , Michio ISHIKAWA , Yuji FURUMURA , Naomi MURA
发明人： Toshio HAYASHI , Yasuhiro MORIKAWA , Michio ISHIKAWA , Yuji FURUMURA , Naomi MURA
IPC分类号： H01L23/48 , H01L29/66 , H01L21/306
CPC分类号： H01L21/31116 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.
摘要翻译：一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。

3. 发明申请

US20120152890A1 METHODS FOR MANUFACTURING RADIO FREQUENCY (RF) POWDER 有权
标题翻译：制造无线电频率（RF）粉末的方法
公开(公告)号：US20120152890A1
公开(公告)日：2012-06-21
申请号：US13404667
申请日：2012-02-24
申请人： Yuji FURUMURA
发明人： Yuji FURUMURA
IPC分类号： H05K3/00
CPC分类号： G06K19/07749 , G06K19/0723 , G06K19/07767
摘要： The present disclosure provides methods for manufacturing a radio frequency (RF) powder including a plurality of RF particles, each of which includes a circuit element. A plurality of circuit elements, each corresponding to a different RF particle, may be formed on a first surface of a substrate. Grooves may be etched into the first surface of the substrate between the plurality of circuit elements. A protection film may be formed on each of the plurality of circuit elements and a portion of the substrate between a second, opposite surface of the substrate and bottoms of the grooves may be removed so that each of the plurality of circuit elements is associated with the remaining portion of the substrate.
摘要翻译：本公开提供了制造包括多个RF颗粒的射频（RF）粉末的方法，每个RF颗粒包括电路元件。可以在衬底的第一表面上形成各自对应于不同的RF颗粒的多个电路元件。沟槽可以蚀刻到多个电路元件之间的衬底的第一表面中。可以在多个电路元件中的每一个上形成保护膜，并且可以去除衬底的第二相对表面和沟槽的底部之间的衬底的一部分，使得多个电路元件中的每一个与衬底的剩余部分。

4. 发明申请

US20120160920A1 RADIO FREQUENCY (RF) PARTICLES 有权
标题翻译：无线电频率（RF）颗粒
公开(公告)号：US20120160920A1
公开(公告)日：2012-06-28
申请号：US13414794
申请日：2012-03-08
申请人： Yuji FURUMURA
发明人： Yuji FURUMURA
IPC分类号： G06K19/077 , H05K3/00
CPC分类号： H01Q9/27 , G06K19/072 , G06K19/07749 , G07D7/01 , H01Q1/2208 , H01Q9/16
摘要： The present disclosure generally describes radio frequency (RF) particles and an RF powder-containing base including a plurality of such RF particles. The RF particles may include an antenna element and an integrated circuit element coupled together by at least one interconnection. The base may be formed from sheet-like subjects, such as various kinds of cards, bills, and documents. Methods of forming the RF powder-containing base are also generally disclosed.
摘要翻译：本公开通常描述射频（RF）颗粒和包含多个这样的RF颗粒的含RF粉末的基底。 RF颗粒可以包括通过至少一个互连而耦合在一起的天线元件和集成电路元件。基部可以由片状物体形成，例如各种卡，票据和文件。通常还公开了形成含有RF粉末的基底的方法。

5. 发明申请

US20100081235A1 METHOD FOR MANUFACTURING RF POWDER 有权
标题翻译：制造射频粉末的方法
公开(公告)号：US20100081235A1
公开(公告)日：2010-04-01
申请号：US12516493
申请日：2007-11-26
申请人： Yuji FURUMURA
发明人： Yuji FURUMURA
IPC分类号： H01L21/78
CPC分类号： G06K19/07749 , G06K19/07775 , G06K19/07779 , H01Q1/2283 , H01Q7/005
摘要： A method for manufacturing RF powder wherein the RF powder is composed of a large amount of particles and used as collective RF powder (a powdery entity); and a large amount of RF powder particles can be obtained from a wafer in a stable manner and at a high yield is provided.The method for manufacturing RF powder is a method for manufacturing RF powder composed of a large amount of particles 11a each having a substrate 12 and a magnetic coupling circuit device 15. This method includes a step S11 of forming many antenna circuit devices 39 on a wafer 40; a gas dicing step S13 for drawing dicing grooves on a wafer to locate positions of separation of magnetic coupling circuit devices; a protection film formation step S14 for coating surrounding areas of the magnetic coupling circuit devices with a protection film; a reinforcement step S15 for attaching the wafer to a supporting plate using an adhesive sheet; a grinding step S16 for grinding the backside of the wafer until the dicing grooves are reached; and a separation step S17 for separating the circuit devices by removing the supporting plate.
摘要翻译：一种制造射频粉末的方法，其中RF粉末由大量的颗粒组成并用作集体RF粉末（粉末实体）; 并且可以以稳定的方式从晶片获得大量的RF粉末颗粒，并以高产率提供。 RF粉末的制造方法是由具有基板12和磁耦合电路装置15的大量的粒子11a构成的RF粉末的制造方法。该方法包括在晶片上形成许多天线电路装置39的工序S11 40; 用于在晶片上吸引切割槽的气体切割步骤S13，以定位磁耦合电路器件的分离位置; 保护膜形成步骤S14，用于用保护膜涂覆磁耦合电路装置的周围区域; 加强步骤S15，用于使用粘合片将晶片附着在支撑板上; 用于研磨晶片的背面直到达到切割槽的研磨步骤S16; 以及用于通过移除支撑板来分离电路装置的分离步骤S17。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式