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    • 9. 发明授权
    • Method for producing a semiconductor substrate
    • 半导体基板的制造方法
    • US06586316B2
    • 2003-07-01
    • US10087889
    • 2002-03-01
    • Yuhzoh TsudaShingetoshi ItoSeiki Yano
    • Yuhzoh TsudaShingetoshi ItoSeiki Yano
    • H01L2120
    • H01L21/02389H01L21/0242H01L21/02458H01L21/0254H01L21/0262H01L21/02639H01L21/02647H01L33/007
    • A method for producing a semiconductor substrate includes the steps of: forming a first patterned mask containing a material having a growth suppressing effect on a substrate; growing a first nitride semiconductor on a portion of the substrate corresponding to an opening portion of the first patterned mask; forming a second patterned mask containing a material having a growth suppressing effect only on a main surface of the first nitride semiconductor which is positioned above the opening portion of the first patterned mask; and growing a semiconductor crystal substantially from the side surface of the first nitride semiconductor so as to form a second nitride semiconductor which integrally includes the first patterned mask and the second patterned mask.
    • 一种制造半导体衬底的方法包括以下步骤:在衬底上形成含有具有生长抑制作用的材料的第一图案化掩模; 在对应于第一图案化掩模的开口部分的衬底的一部分上生长第一氮化物半导体; 形成第二图案掩模,其包含仅在位于第一图案化掩模的开口部分上方的第一氮化物半导体的主表面上具有生长抑制作用的材料; 以及从所述第一氮化物半导体的侧表面生长半导体晶体,以形成一体地包括所述第一图案化掩模和所述第二图案化掩模的第二氮化物半导体。