专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06765233B2 Semiconductor substrate, light emitting device, and method for producing the same 有权
标题翻译：半导体衬底，发光器件及其制造方法
公开(公告)号：US06765233B2
公开(公告)日：2004-07-20
申请号：US09904162
申请日：2001-07-11
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
IPC分类号： H01L2715
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.
摘要翻译：本发明的半导体衬底的制造方法包括以下步骤：在下基板上形成含有具有生长抑制作用的材料的第一图案掩模; 通过第一图案化掩模在下基板上生长半导体晶体以形成第一半导体晶体层; 形成第二图案化掩模，其包含在下基板上或上方具有生长抑制作用的材料，所述第二图案化掩模至少具有位于与第一图案化掩模的表面的水平不同的水平面的表面，相对于到下基板的表面; 以及经由所述第二图案化掩模在所述下基板上或上方生长半导体晶体以形成第二半导体晶体层。

2. 发明授权

US06294440B1 Semiconductor substrate, light-emitting device, and method for producing the same 有权
公开(公告)号：US06294440B1
公开(公告)日：2001-09-25
申请号：US09289575
申请日：1999-04-09
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
IPC分类号： H01L2120
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.

3. 发明授权

US08076165B2 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method 有权
标题翻译：通过该方法制造p型氮化物半导体和半导体器件的方法
公开(公告)号：US08076165B2
公开(公告)日：2011-12-13
申请号：US11887153
申请日：2006-03-02
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , C23C16/34 , C23C16/4481 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0425 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.
摘要翻译：本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

4. 发明授权

US07858992B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07858992B2
公开(公告)日：2010-12-28
申请号：US12366480
申请日：2009-02-05
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L29/04 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

5. 发明申请

US20090121320A1 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method 有权
标题翻译：通过该方法制造p型氮化物半导体和半导体器件的方法
公开(公告)号：US20090121320A1
公开(公告)日：2009-05-14
申请号：US11887153
申请日：2006-03-02
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
IPC分类号： H01L29/12 , H01L21/365
CPC分类号： H01S5/22 , B82Y20/00 , C23C16/34 , C23C16/4481 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0425 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.
摘要翻译：本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

6. 发明授权

US06891201B2 Nitride semiconductor laser element and optical device containing it 有权
标题翻译：氮化物半导体激光元件和含有它的光学器件
公开(公告)号：US06891201B2
公开(公告)日：2005-05-10
申请号：US10466339
申请日：2002-01-09
申请人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya , Yukio Yamasaki
发明人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya , Yukio Yamasaki
IPC分类号： H01L33/00 , H01S5/02 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01L33/0075 , H01S5/0207 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor light emitting device includes a processed substrate (101a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer (102) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.
摘要翻译：氮化物半导体发光器件包括：处理衬底（101a），其包括形成在氮化物半导体衬底的主表面上的沟槽和丘丘;覆盖所述沟槽和所述被处理衬底的所述山丘的氮化物半导体衬底（102），以及具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107）之间的量子阱层接触的阻挡层的发光器件结构 -110）在氮化物半导体衬底上。发光器件结构的电流限制部分形成在距宽度方向上的槽的中心超过1um的区域上方，并且在宽度方向上距离山的中心大于1mum。

7. 发明授权

US06586779B2 Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same 有权
公开(公告)号：US06586779B2
公开(公告)日：2003-07-01
申请号：US10128490
申请日：2002-04-24
申请人： Yuhzoh Tsuda , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Shigetoshi Ito
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , G11B7/127 , H01L33/325 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer.

8. 发明授权

US06452216B1 Nitride semiconductor light emitting device and apparatus including the same 有权
标题翻译：氮化物半导体发光器件及其装置
公开(公告)号：US06452216B1
公开(公告)日：2002-09-17
申请号：US09952845
申请日：2001-09-11
申请人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya
发明人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/32 , H01S5/0021 , H01S5/0207 , H01S5/3203 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes a worked substrate including grooves and lands formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer covering the grooves and the lands of the worked substrate and a nitride semiconductor multilayer emission structure including an emission layer including a quantum well layer or both a quantum well layer and a barrier layer in contact with the quantum well layer between an n-type layer and a p-type layer over the nitride semiconductor underlayer, while the width of the grooves is within the range of 11 to 30 &mgr;m and the width of the lands is within the range of 1 to 20 &mgr;m.
摘要翻译：氮化物半导体发光器件包括：加工衬底，其包括形成在氮化物半导体衬底的主表面上的沟槽和焊盘;覆盖所述沟槽和所述加工衬底的焊盘的氮化物半导体衬底;以及氮化物半导体多层发射结构，包括与氮化物半导体下层上的n型层和p型层之间的量子阱层接触的量子阱层或势垒层，而沟槽的宽度在该范围内为11〜30μm，平台的宽度为1〜20μm的范围。

9. 发明授权

US06586316B2 Method for producing a semiconductor substrate 有权
标题翻译：半导体基板的制造方法
公开(公告)号：US06586316B2
公开(公告)日：2003-07-01
申请号：US10087889
申请日：2002-03-01
申请人： Yuhzoh Tsuda , Shingetoshi Ito , Seiki Yano
发明人： Yuhzoh Tsuda , Shingetoshi Ito , Seiki Yano
IPC分类号： H01L2120
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for producing a semiconductor substrate includes the steps of: forming a first patterned mask containing a material having a growth suppressing effect on a substrate; growing a first nitride semiconductor on a portion of the substrate corresponding to an opening portion of the first patterned mask; forming a second patterned mask containing a material having a growth suppressing effect only on a main surface of the first nitride semiconductor which is positioned above the opening portion of the first patterned mask; and growing a semiconductor crystal substantially from the side surface of the first nitride semiconductor so as to form a second nitride semiconductor which integrally includes the first patterned mask and the second patterned mask.
摘要翻译：一种制造半导体衬底的方法包括以下步骤：在衬底上形成含有具有生长抑制作用的材料的第一图案化掩模; 在对应于第一图案化掩模的开口部分的衬底的一部分上生长第一氮化物半导体; 形成第二图案掩模，其包含仅在位于第一图案化掩模的开口部分上方的第一氮化物半导体的主表面上具有生长抑制作用的材料; 以及从所述第一氮化物半导体的侧表面生长半导体晶体，以形成一体地包括所述第一图案化掩模和所述第二图案化掩模的第二氮化物半导体。

10. 发明申请

US20070297476A1 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20070297476A1
公开(公告)日：2007-12-27
申请号：US11702625
申请日：2007-02-06
申请人： Shigetoshi Ito , Yuhzoh Tsuda , Yoshihiro Ueta
发明人： Shigetoshi Ito , Yuhzoh Tsuda , Yoshihiro Ueta
IPC分类号： H01S5/343
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/2231 , H01S5/34333
摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.
摘要翻译：氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式