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1. 外观设计

USD618379S1 Optical reflection shade 有权
标题翻译：光反射罩
公开(公告)号：USD618379S1
公开(公告)日：2010-06-22
申请号：US29343157
申请日：2009-09-09
申请人： Yu-Shu Chen , Ming-Chin Chien , Chih-Ming Lai
设计人： Yu-Shu Chen , Ming-Chin Chien , Chih-Ming Lai

2. 外观设计

USD618380S1 Optical reflection shade 有权
公开(公告)号：USD618380S1
公开(公告)日：2010-06-22
申请号：US29343158
申请日：2009-09-09
申请人： Yu-Shu Chen , Chih-Ming Lai
设计人： Yu-Shu Chen , Chih-Ming Lai

3. 发明授权

US08100554B2 Light source holder and bulb using same 失效
标题翻译：光源支架和灯泡使用相同
公开(公告)号：US08100554B2
公开(公告)日：2012-01-24
申请号：US12555884
申请日：2009-09-09
申请人： An-Chi Wei , Ying-Chieh Lu , Yu-Shu Chen , Ji-Min Lo , Kuo-Feng Chiang , Chih-Ming Lai
发明人： An-Chi Wei , Ying-Chieh Lu , Yu-Shu Chen , Ji-Min Lo , Kuo-Feng Chiang , Chih-Ming Lai
IPC分类号： F21V7/00
CPC分类号： F21V3/00 , F21K9/232 , F21V19/00 , F21V29/74 , F21V29/76 , F21V29/83 , F21Y2107/20 , F21Y2115/10
摘要： A light source holder includes a spherical surface and a number of recessed portions. The recessed portions are defined in the spherical surface and arranged substantially evenly over the spherical surface. Each of the recessed portions comprises a plurality of inner surfaces. The inner surface of each recessed portion comprises a bottom surface and a lateral reflective surface. The bottom surface is capable of having a solid-state light source arranged thereon. The lateral reflective surface is adjacent to the bottom surface and configured for reflecting light emitted from the solid-state light source and outputting the light from the recessed portion.
摘要翻译：光源保持器包括球面和多个凹部。凹部被限定在球形表面中并且基本均匀地布置在球形表面上。每个凹部包括多个内表面。每个凹陷部分的内表面包括底表面和横向反射表面。底面能够具有布置在其上的固态光源。横向反射表面与底面相邻并且被配置用于反射从固态光源发出的光并输出来自凹部的光。

4. 外观设计

USD618846S1 Optical reflection shade 有权
公开(公告)号：USD618846S1
公开(公告)日：2010-06-29
申请号：US29343159
申请日：2009-09-09
申请人： Yu-Shu Chen , Chih-Ming Lai
设计人： Yu-Shu Chen , Chih-Ming Lai

5. 外观设计

USD609836S1 Illumination device 有权
公开(公告)号：USD609836S1
公开(公告)日：2010-02-09
申请号：US29339846
申请日：2009-07-08
申请人： Ping-Yu Chen , Zheng-Jay Huang , Hsin-Fei Huang , Yu-Shu Chen , Kuo-Mang Lo , Chien-Ting Lu , Chih-Ming Lai
设计人： Ping-Yu Chen , Zheng-Jay Huang , Hsin-Fei Huang , Yu-Shu Chen , Kuo-Mang Lo , Chien-Ting Lu , Chih-Ming Lai

6. 发明授权

US10096544B2 Semiconductor interconnect structure 有权
公开(公告)号：US10096544B2
公开(公告)日：2018-10-09
申请号：US13464055
申请日：2012-05-04
申请人： Chih-Ming Lai , Wen-Chun Huang , Ru-Gun Liu , Pi-Tsung Chen
发明人： Chih-Ming Lai , Wen-Chun Huang , Ru-Gun Liu , Pi-Tsung Chen
IPC分类号： H01L31/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/768
摘要： The present disclosure provides an interconnect structure for a semiconductor device. The interconnect structure includes a first metal layer that contains a first metal line. The interconnect structure includes a dielectric layer located over the first metal layer. The dielectric layer contains a first sub-via electrically coupled to the first metal line and a second sub-via electrically coupled to the first sub-via. The second sub-via is different from the first sub-via. The interconnect structure includes a second metal layer located over the dielectric layer. The second metal layer contains a second metal line electrically coupled to the second sub-via. No other metal layer is located between the first metal layer and the second metal layer.

7. 发明授权

US08759186B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08759186B2
公开(公告)日：2014-06-24
申请号：US13354334
申请日：2012-01-20
申请人： Yung-Hui Yeh , Chih-Ming Lai
发明人： Yung-Hui Yeh , Chih-Ming Lai
IPC分类号： H01L33/08
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1248 , H01L29/66969
摘要： A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。在第一绝缘层上形成栅极。通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

8. 发明授权

US08587862B2 Second-harmonic generation nonliner frenquency converter 有权
标题翻译：二次谐波发生非线性频率转换器
公开(公告)号：US08587862B2
公开(公告)日：2013-11-19
申请号：US13218462
申请日：2011-08-26
申请人： Jiun-Wei Liou , Jun-Ying Li , Chih-Ming Lai , Chern-Lin Chen , Way-Seen Wang , Lung-Han Peng
发明人： Jiun-Wei Liou , Jun-Ying Li , Chih-Ming Lai , Chern-Lin Chen , Way-Seen Wang , Lung-Han Peng
IPC分类号： G02F1/37 , G02F1/35
CPC分类号： G02F1/37 , G02F1/3558 , G02F1/3775
摘要： A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.
摘要翻译：二次谐波发生非线性频率转换器包括非线性光学晶体。非线性光学晶体包括多个部分。这些部分依次相互连接，每个部分的阶段与其他部分不同。每个相包括正域和负域。每个部分包括多个准相位匹配结构。准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

9. 发明申请

US20130126859A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130126859A1
公开(公告)日：2013-05-23
申请号：US13354334
申请日：2012-01-20
申请人： Yung-Hui Yeh , Chih-Ming Lai
发明人： Yung-Hui Yeh , Chih-Ming Lai
IPC分类号： H01L33/08 , H01L33/44
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1248 , H01L29/66969
摘要： A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。在第一绝缘层上形成栅极。通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

10. 发明授权

US08350450B2 LED lamp 失效
标题翻译：点灯
公开(公告)号：US08350450B2
公开(公告)日：2013-01-08
申请号：US12749472
申请日：2010-03-29
申请人： Chih-Chung Tsao , Chih-Ming Lai , Yu-Pin Liu
发明人： Chih-Chung Tsao , Chih-Ming Lai , Yu-Pin Liu
IPC分类号： H01J61/42
CPC分类号： F21V29/004 , F21K9/232 , F21V29/78 , F21Y2107/20 , F21Y2115/10
摘要： An LED lamp includes a heat sink including a base having a heat-dissipating face, an LED module including a printed circuit board mounted on the base and a plurality of LEDs disposed on the printed circuit board, and a connecter electrically connecting the LED module to a power supply. The heat sink further includes a plurality of spiral fins protruding outwardly from the heat-dissipating face of the base.
摘要翻译： LED灯包括散热器，该散热器包括具有散热面的基座，包括安装在基座上的印刷电路板的LED模块和布置在印刷电路板上的多个LED，以及将LED模块电连接到电源。散热器还包括从基座的散热面向外突出的多个螺旋形翅片。

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