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1. 发明授权

US08368600B2 Dual-band antenna and wireless network device having the same 有权
标题翻译：具有相同的双频天线和无线网络设备
公开(公告)号：US08368600B2
公开(公告)日：2013-02-05
申请号：US12807601
申请日：2010-09-08
申请人： Yu-Jen Wang , Wei-Bin Lee
发明人： Yu-Jen Wang , Wei-Bin Lee
IPC分类号： H01Q1/38 , H01Q1/24
CPC分类号： H01Q1/2275 , H01Q5/371 , H01Q9/42
摘要： A dual-band antenna for use in a wireless network device comprises first, second, and third radiators. The first and second radiators are connected by a stand portion. The second radiator is a generally C-shaped plate having a connecting section and a free-end portion. A ground end and an input end are provided at predetermined positions of the connecting section and are respectively and electrically connected to a grounding portion and a control circuit of a substrate. The free-end portion overlaps with the orthogonal projection of the first radiator and is parallel to the first radiator. The third radiator is electrically connected to the second radiator via a conductive post and is parallel to the second radiator. The second and third radiators are provided on the substrate while the first radiator is provided outside the substrate. The first, second, and third radiators are parallel to and spaced apart from one another.
摘要翻译：用于无线网络设备的双频天线包括第一，第二和第三散热器。第一和第二散热器通过支架部分连接。第二散热器是具有连接部和自由端部的大致C字形的板。接地端和输入端设置在连接部分的预定位置处，并分别电连接到基板的接地部分和控制电路。自由端部分与第一散热器的正交投影重叠并且平行于第一散热器。第三散热器经由导电柱电连接到第二散热器，并且平行于第二散热器。第二和第三散热器设置在基板上，而第一散热器设置在基板的外部。第一，第二和第三散热器彼此平行并间隔开。

2. 发明申请

US20110304510A1 Planar inverted-F antenna and wireless network device having the same 有权
标题翻译：平面倒F天线与无线网络设备相同
公开(公告)号：US20110304510A1
公开(公告)日：2011-12-15
申请号：US12807585
申请日：2010-09-08
申请人： Yu-Jen Wang , Wei-Bin Lee
发明人： Yu-Jen Wang , Wei-Bin Lee
IPC分类号： H01Q9/04 , H01Q1/24
CPC分类号： H01Q9/42 , H01Q1/243 , H01Q1/38
摘要： A planar inverted-F antenna for use in a wireless network device comprises a connecting member and two radiators. The connecting member has at least one input end and at least one ground end. Each radiator has a first end portion perpendicularly connected to one of the two ends of the connecting member, and the two radiators are parallel and correspond in shape to each other. Each radiator further has an L-shaped notch and thus forms a barb. A second end portion of each radiator is bent to form an engaging end which is generally parallel to the connecting member and configured to fasten with a substrate of the wireless network device.
摘要翻译：用于无线网络设备的平面倒F天线包括连接构件和两个散热器。连接构件具有至少一个输入端和至少一个接地端。每个散热器具有垂直地连接到连接构件的两个端部中的一个的第一端部部分，并且两个散热器的形状彼此平行并对应。每个散热器还具有L形凹口，因此形成倒钩。每个散热器的第二端部被弯曲以形成大致平行于连接构件的接合端，并且被配置成与无线网络设备的基板紧固。

3. 发明申请

US20110001669A1 Dual-band antenna and wireless network device having the same 有权
标题翻译：具有相同的双频天线和无线网络设备
公开(公告)号：US20110001669A1
公开(公告)日：2011-01-06
申请号：US12807601
申请日：2010-09-08
申请人： Yu-Jen Wang , Wei-Bin Lee
发明人： Yu-Jen Wang , Wei-Bin Lee
IPC分类号： H01Q5/00 , H01Q9/04 , H01Q1/24
CPC分类号： H01Q1/2275 , H01Q5/371 , H01Q9/42
摘要： A dual-band antenna for use in a wireless network device comprises first, second, and third radiators. The first and second radiators are connected by a stand portion. The second radiator is a generally C-shaped plate having a connecting section and a free-end portion. A ground end and an input end are provided at predetermined positions of the connecting section and are respectively and electrically connected to a grounding portion and a control circuit of a substrate. The free-end portion overlaps with the orthogonal projection of the first radiator and is parallel to the first radiator. The third radiator is electrically connected to the second radiator via a conductive post and is parallel to the second radiator. The second and third radiators are provided on the substrate while the first radiator is provided outside the substrate. The first, second, and third radiators are parallel to and spaced apart from one another.
摘要翻译：用于无线网络设备的双频天线包括第一，第二和第三散热器。第一和第二散热器通过支架部分连接。第二散热器是具有连接部和自由端部的大致C字形的板。接地端和输入端设置在连接部分的预定位置处，并分别电连接到基板的接地部分和控制电路。自由端部分与第一散热器的正交投影重叠并且平行于第一散热器。第三散热器经由导电柱电连接到第二散热器并且平行于第二散热器。第二和第三散热器设置在基板上，而第一散热器设置在基板的外部。第一，第二和第三散热器彼此平行并间隔开。

4. 发明授权

US08390523B2 Planar inverted-F antenna and wireless network device having the same 有权
标题翻译：平面倒F天线与无线网络设备相同
公开(公告)号：US08390523B2
公开(公告)日：2013-03-05
申请号：US12807585
申请日：2010-09-08
申请人： Yu-Jen Wang , Wei-Bin Lee
发明人： Yu-Jen Wang , Wei-Bin Lee
IPC分类号： H01Q1/24 , H01Q13/10
CPC分类号： H01Q9/42 , H01Q1/243 , H01Q1/38
摘要： A planar inverted-F antenna for use in a wireless network device comprises a connecting member and two radiators. The connecting member has at least one input end and at least one ground end. Each radiator has a first end portion perpendicularly connected to one of the two ends of the connecting member, and the two radiators are parallel and correspond in shape to each other. Each radiator further has an L-shaped notch and thus forms a barb. A second end portion of each radiator is bent to form an engaging end which is generally parallel to the connecting member and configured to fasten with a substrate of the wireless network device.
摘要翻译：用于无线网络设备的平面倒F天线包括连接构件和两个散热器。连接构件具有至少一个输入端和至少一个接地端。每个散热器具有垂直地连接到连接构件的两个端部中的一个的第一端部部分，并且两个散热器的形状彼此平行并对应。每个散热器还具有L形凹口，因此形成倒钩。每个散热器的第二端部被弯曲以形成大致平行于连接构件的接合端，并且被配置成与无线网络设备的基板紧固。

5. 发明授权

US11872411B2 Method of beam angle optimization for radiation apparatus 有权
公开(公告)号：US11872411B2
公开(公告)日：2024-01-16
申请号：US17681190
申请日：2022-02-25
申请人： Yu-Jen Wang
发明人： Feipei Lai , Jason Chia-Hsien Cheng , Yu-Jen Wang , Wei-Jen Chen
IPC分类号： A61N5/10 , G16H30/20 , G16H30/40
CPC分类号： A61N5/1067 , A61N5/1031 , G16H30/20 , G16H30/40
摘要： A newly developed algorithm and software can effectively and accurately predict the collisions for the accelerator, phantom, and patient setups, and can help physicians to choose the noncolliding and optimized beam sets efficiently via offering the ideal hits of planning target volume (PTV) and constraints of organ at risks (OARs).

6. 发明授权

US08900884B2 MTJ element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US08900884B2
公开(公告)日：2014-12-02
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

7. 发明授权

US08879308B2 Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate 有权
标题翻译：使用字线过驱动和高k金属栅极提高磁隧道结的编程电流
公开(公告)号：US08879308B2
公开(公告)日：2014-11-04
申请号：US13550262
申请日：2012-07-16
申请人： Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
发明人： Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
IPC分类号： G11C11/00 , G11C8/08 , G11C11/16
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1657 , G11C11/1659
摘要： A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
摘要翻译：操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）装置的MRAM单元; 以及选择器，包括串联耦合到MTJ器件的源极 - 漏极路径。该方法还包括将过驱动电压施加到选择器的门以接通选择器。

8. 发明授权

US08698260B2 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications 有权
标题翻译：具有改进的垂直各向异性的工程磁性层，使用玻璃化剂进行自旋电子应用
公开(公告)号：US08698260B2
公开(公告)日：2014-04-15
申请号：US13548859
申请日：2012-07-13
申请人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/10
摘要： A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.
摘要翻译：公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量磁性隧道结中的稳定性。自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

9. 发明申请

US20130334629A1 MTJ Element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US20130334629A1
公开(公告)日：2013-12-19
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

10. 发明申请

US20130270523A1 Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer 有权
标题翻译：通过插入硼粉尘层的磁性器件应用具有高热稳定性的自由层
公开(公告)号：US20130270523A1
公开(公告)日：2013-10-17
申请号：US13448557
申请日：2012-04-17
申请人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能。每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

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