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1. 发明授权

US07898880B2 Dual port memory device, memory device and method of operating the dual port memory device 有权
标题翻译：双端口存储器件，存储器件和操作双端口存储器件的方法
公开(公告)号：US07898880B2
公开(公告)日：2011-03-01
申请号：US12438428
申请日：2007-09-12
申请人： Yu-Hwan Jung , Ji-Tae Ha , Chang-Hyuk Hui , Young-Hun Lim
发明人： Yu-Hwan Jung , Ji-Tae Ha , Chang-Hyuk Hui , Young-Hun Lim
IPC分类号： G11C7/00
CPC分类号： G06F13/1684 , G11C7/1075
摘要： A dual port memory device converts an address and a control signal, which are inputted via a first port and conform to a first type memory interface, into an address and a control signal which conform to a second type memory interface, to access a memory array. The dual port memory device accesses a memory array based on an address and a control signal which are inputted via a second port and conform to the second type memory interface. The dual port memory device accesses a memory array according to the first type memory interface or the second type memory interface in response to a selecting signal. Therefore, the dual port memory device can be coupled to a processor with a first interface (e.g., PSRAM or SRAM interface) and a processor with a second interface (e.g., SDRAM interface).
摘要翻译：双端口存储器设备将通过第一端口输入并符合第一类型存储器接口的地址和控制信号转换成符合第二类型存储器接口的地址和控制信号，以访问存储器阵列。双端口存储器设备基于经由第二端口输入并符合第二类型存储器接口的地址和控制信号来访问存储器阵列。响应于选择信号，双端口存储器件根据第一类型存储器接口或第二类型存储器接口访问存储器阵列。因此，双端口存储器件可以与具有第一接口（例如，PSRAM或SRAM接口）的处理器和具有第二接口（例如，SDRAM接口）的处理器耦合。

2. 发明申请

US20100232238A1 DUAL PORT MEMORY DEVICE, MEMORY DEVICE AND METHOD OF OPERATING THE DUAL PORT MEMORY DEVICE 有权
标题翻译：双端口存储器件，存储器件和操作双端口存储器件的方法
公开(公告)号：US20100232238A1
公开(公告)日：2010-09-16
申请号：US12438428
申请日：2007-09-12
申请人： Yu-Hwan Jung , Ji-Tae Ha , Chang-Hyuk Hui , Young-Hun Lim
发明人： Yu-Hwan Jung , Ji-Tae Ha , Chang-Hyuk Hui , Young-Hun Lim
IPC分类号： G11C7/00 , G11C8/16
CPC分类号： G06F13/1684 , G11C7/1075
摘要： A dual port memory device converts an address and a control signal, which are inputted via a first port and conform to a first type memory interface, into an address and a control signal which conform to a second type memory interface, to access a memory array. The dual port memory device accesses a memory array based on an address and a control signal which are inputted via a second port and conform to the second type memory interface. The dual port memory device accesses a memory array according to the first type memory interface or the second type memory interface in response to a selecting signal. Therefore, the dual port memory device can be coupled to a processor with a first interface (e.g., PSRAM or SRAM interface) and a processor with a second interface (e.g., SDRAM interface).
摘要翻译：双端口存储器设备将通过第一端口输入并符合第一类型存储器接口的地址和控制信号转换成符合第二类型存储器接口的地址和控制信号，以访问存储器阵列。双端口存储器设备基于经由第二端口输入并符合第二类型存储器接口的地址和控制信号来访问存储器阵列。响应于选择信号，双端口存储器件根据第一类型存储器接口或第二类型存储器接口访问存储器阵列。因此，双端口存储器件可以与具有第一接口（例如，PSRAM或SRAM接口）的处理器和具有第二接口（例如，SDRAM接口）的处理器耦合。

3. 发明申请

US20100037014A1 MEMORY DEVICE, MEMORY SYSTEM AND DUAL PORT MEMORY DEVICE WITH SELF-COPY FUNCTION 有权
标题翻译：存储器件，存储器系统和具有自复制功能的双端口存储器件
公开(公告)号：US20100037014A1
公开(公告)日：2010-02-11
申请号：US12515697
申请日：2007-11-21
申请人： Young-Hun Lim , Ji-Tae Ha , Ho-Jong Park
发明人： Young-Hun Lim , Ji-Tae Ha , Ho-Jong Park
IPC分类号： G06F12/00 , G06F12/16
CPC分类号： G11C7/22 , G11C2207/2236
摘要： A memory device with a self-copy function includes a memory cell array having first and second banks, and a memory interface. The memory interface reads data from a memory area of the first bank corresponding to a source address contained in previously set self-copy information and writes the read data to a memory area of the second bank corresponding to a destination address contained in the self-copy information via a self-copy data path when a self-copy signal is activated by an external self-copy start request.
摘要翻译：具有自复制功能的存储器件包括具有第一和第二存储体的存储单元阵列和存储器接口。存储器接口从对应于先前设置的自复制信息中包含的源地址的第一存储体的存储区读取数据，并将读取的数据写入对应于包含在自复制中的目的地地址的第二存储体的存储区域当通过外部自复制开始请求激活自复制信号时，经由自复制数据路径的信息。

4. 发明授权

US08122186B2 Memory device, memory system and dual port memory device with self-copy function 有权
标题翻译：内存设备，内存系统和具有自动复制功能的双端口存储设备
公开(公告)号：US08122186B2
公开(公告)日：2012-02-21
申请号：US12515697
申请日：2007-11-21
申请人： Young-Hun Lim , Ji-Tae Ha , Ho-Jong Park
发明人： Young-Hun Lim , Ji-Tae Ha , Ho-Jong Park
IPC分类号： G06F13/00
CPC分类号： G11C7/22 , G11C2207/2236
摘要： A memory device with a self-copy function includes a memory cell array having first and second banks, and a memory interface. The memory interface reads data from a memory area of the first bank corresponding to a source address contained in previously set self-copy information and writes the read data to a memory area of the second bank corresponding to a destination address contained in the self-copy information via a self-copy data path when a self-copy signal is activated by an external self-copy start request.
摘要翻译：具有自复制功能的存储器件包括具有第一和第二存储体的存储单元阵列和存储器接口。存储器接口从对应于先前设置的自复制信息中包含的源地址的第一存储体的存储区读取数据，并将读取的数据写入对应于包含在自复制中的目的地地址的第二存储体的存储区域当通过外部自复制开始请求激活自复制信号时，经由自复制数据路径的信息。

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