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1. 发明授权

US08940182B2 Compositions for etching and methods of forming a semiconductor device using the same 有权
标题翻译：用于蚀刻的组合物和使用其形成半导体器件的方法
公开(公告)号：US08940182B2
公开(公告)日：2015-01-27
申请号：US13601064
申请日：2012-08-31
申请人： Young-Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
发明人： Young-Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： C09K13/06 , C09K13/04 , C23F1/16 , H01L21/311 , H01L29/66 , H01L29/788 , H01L29/792 , H01L27/115
CPC分类号： H01L21/02658 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
摘要翻译：提供蚀刻组合物。蚀刻组合物包括磷酸，铵离子和硅化合物。硅化合物包括硅原子，具有与硅原子结合的氨基的原子团以及与硅原子结合的至少两个氧原子。还提供了利用蚀刻组合物的方法。

2. 发明申请

US20130092872A1 COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME 有权
公开(公告)号：US20130092872A1
公开(公告)日：2013-04-18
申请号：US13601064
申请日：2012-08-31
申请人： Young-Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
发明人： Young-Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： C09K13/06
CPC分类号： H01L21/02658 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

3. 发明授权

US08730208B2 Touch screen apparatus and driving method thereof 有权
标题翻译：触摸屏设备及其驱动方法
公开(公告)号：US08730208B2
公开(公告)日：2014-05-20
申请号：US13572829
申请日：2012-08-13
申请人： Myungho Shin , Jonggu Heo , Kyounghwan Kim , Younggyu Kim
发明人： Myungho Shin , Jonggu Heo , Kyounghwan Kim , Younggyu Kim
IPC分类号： G06F3/045 , G09G5/00
CPC分类号： G06F3/044 , G06F3/0416 , G06F2203/04106
摘要： A touch screen apparatus and a driving method thereof are provided. The touch screen drive circuit performs a setup operation for selecting Tx lines to be supplied with the drive signal and Rx lines to receive the voltages of the touch sensors, a sensing operation for supplying a drive signal to the Tx lines and receiving and sampling touch sensor voltages through the Rx lines, an ADC operation for converting the sampled voltages into digital data, a coordinate detection operation for analyzing the digital data by a preset touch detection algorithm and estimating the coordinates of a touch input position, and a data transmission operation for transmitting touch coordinate data comprising the coordinates to an external system. At least two operations among the setup operation, the sensing operation, and the ADC operation are performed in parallel.
摘要翻译：提供一种触摸屏装置及其驱动方法。触摸屏驱动电路执行用于选择要提供的驱动信号的Tx线和接收线路的触摸传感器的电压的设置操作，用于向Tx线提供驱动信号的感测操作以及接收和采样触摸传感器通过Rx线的电压，用于将采样的电压转换成数字数据的ADC操作，用于通过预设的触摸检测算法分析数字数据并估计触摸输入位置的坐标的坐标检测操作，以及用于发送的数据传输操作将包括坐标的坐标数据触摸到外部系统。并行执行设置操作，感测操作和ADC操作中的至少两个操作。

4. 发明授权

US08183663B2 Crack resistant circuit under pad structure and method of manufacturing the same 有权
标题翻译：垫结构下的抗裂电路及其制造方法
公开(公告)号：US08183663B2
公开(公告)日：2012-05-22
申请号：US12985567
申请日：2011-01-06
申请人： Kyounghwan Kim , Hongkook Min , Sungkyoo Park
发明人： Kyounghwan Kim , Hongkook Min , Sungkyoo Park
IPC分类号： H01L23/48
CPC分类号： H01L24/85 , H01L23/5226 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05095 , H01L2224/05624 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48463 , H01L2224/4847 , H01L2224/48475 , H01L2224/48479 , H01L2224/48624 , H01L2224/48799 , H01L2224/85051 , H01L2224/85201 , H01L2224/859 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01057 , H01L2924/01059 , H01L2924/01066 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2224/48824 , H01L2924/00 , H01L2224/4554
摘要： A circuit under pad structure includes a substrate, a pad electrode, wiring layers interlayer insulation layers alternately disposed between the pad electrode and the substrate, and at least one circuit pattern integral with the substrate, disposed beneath the lowermost wiring layer and spanned by the pad electrode. The width of each wiring layer is smaller than the width of the wiring layer beneath it, i.e., closer to the substrate. The structure is fabricated such that it resists cracking, which maximizes its production yield, and possesses a minimal footprint.
摘要翻译：衬垫结构下的电路包括衬底，焊盘电极，交替地设置在焊盘电极和衬底之间的布线层层间绝缘层，以及与衬底一体的至少一个电路图案，设置在最下面的布线层的下方并被衬垫电极。每个布线层的宽度小于其下面的布线层的宽度，即更靠近基片。该结构被制造成使得其抵抗裂纹，其最大化其产量，并且具有最小的占地面积。

5. 发明申请

US20110101487A1 CRACK RESISTANT CIRCUIT UNDER PAD STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垫片结构下的防裂电路及其制造方法
公开(公告)号：US20110101487A1
公开(公告)日：2011-05-05
申请号：US12985567
申请日：2011-01-06
申请人： Kyounghwan Kim , Hongkook Min , Sungkyoo Park
发明人： Kyounghwan Kim , Hongkook Min , Sungkyoo Park
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L24/85 , H01L23/5226 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05095 , H01L2224/05624 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48463 , H01L2224/4847 , H01L2224/48475 , H01L2224/48479 , H01L2224/48624 , H01L2224/48799 , H01L2224/85051 , H01L2224/85201 , H01L2224/859 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01057 , H01L2924/01059 , H01L2924/01066 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2224/48824 , H01L2924/00 , H01L2224/4554
摘要： A circuit under pad structure includes a substrate, a pad electrode, wiring layers interlayer insulation layers alternately disposed between the pad electrode and the substrate, and at least one circuit pattern integral with the substrate, disposed beneath the lowermost wiring layer and spanned by the pad electrode. The width of each wiring layer is smaller than the width of the wiring layer beneath it, i.e., closer to the substrate. The structure is fabricated such that it resists cracking, which maximizes its production yield, and possesses a minimal footprint.
摘要翻译：衬垫结构下的电路包括衬底，焊盘电极，交替地设置在焊盘电极和衬底之间的布线层层间绝缘层，以及与衬底一体的至少一个电路图案，设置在最下面的布线层的下方并被衬垫电极。每个布线层的宽度小于其下面的布线层的宽度，即更靠近基片。该结构被制造成使得其抵抗裂纹，其最大化其产量，并且具有最小的占地面积。

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