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1. 发明申请

US20170062065A1 NONVOLATILE MEMORY DEVICES, METHODS OF OPERATING THE SAME AND SOLID STATE DRIVES INCLUDING THE SAME 审中-公开
标题翻译：非易失性存储器件，其操作方法和包括其的固态驱动器
公开(公告)号：US20170062065A1
公开(公告)日：2017-03-02
申请号：US15237111
申请日：2016-08-15
申请人： Young-Seop Shim , Jae-Hong KIM , Sang-Soo CHA , Jin-Man HAN
发明人： Young-Seop Shim , Jae-Hong KIM , Sang-Soo CHA , Jin-Man HAN
IPC分类号： G11C16/28 , G11C16/30 , G06F11/10 , G11C16/10 , G11C16/34 , G11C16/08 , G11C29/52
CPC分类号： G06F11/1068 , G06F11/1048 , G11C16/10 , G11C16/20 , G11C16/26 , G11C16/349 , G11C16/3495 , G11C29/025 , G11C29/028 , G11C29/52 , G11C2029/0407 , G11C2029/0409 , G11C2029/0411 , G11C2029/5004
摘要： In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.
摘要翻译：在操作非易失性存储器件的方法中，对存储单元阵列的多个存储块的第一存储块的多页进行编程。在编程之后，在对多个页面之一执行读取操作之前，将至少一些多个存储器块中的虚拟脉冲施加至少一次。

2. 发明申请

US20140225076A1 ORGANOMETALLIC COMPLEX AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME 审中-公开
标题翻译：有机复合物和有机发光二极体，包括它们
公开(公告)号：US20140225076A1
公开(公告)日：2014-08-14
申请号：US13948649
申请日：2013-07-23
申请人： Soung-Wook KIM , Jae-Hong KIM , Myeong-Suk KIM , Moon-Jae LEE , Young-Inn KIM , Seong-Jae YUN , Dae-Young KIM
发明人： Soung-Wook KIM , Jae-Hong KIM , Myeong-Suk KIM , Moon-Jae LEE , Young-Inn KIM , Seong-Jae YUN , Dae-Young KIM
IPC分类号： H01L51/00
CPC分类号： H01L51/0085 , C07F15/0033 , C09K11/06 , C09K2211/1007 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , C09K2211/185 , H01L51/0042 , H01L51/5016 , H01L2051/0063 , H01L2251/5384 , H05B33/14
摘要： An organometallic complex and an organic light-emitting diode including the same, the organometallic complex being represented by Formula 1 below:
摘要翻译：一种有机金属络合物和包含其的有机发光二极管，有机金属络合物由下式1表示：

3. 发明申请

US20140209873A1 ORGANOMETALLIC COMPLEX AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME 有权
标题翻译：有机复合物和有机发光二极体，包括它们
公开(公告)号：US20140209873A1
公开(公告)日：2014-07-31
申请号：US14018558
申请日：2013-09-05
申请人： Soung-Wook KIM , Jae-Hong KIM , Myeong-Suk KIM , Moon-Jae LEE , Sung-Ho JIN
发明人： Soung-Wook KIM , Jae-Hong KIM , Myeong-Suk KIM , Moon-Jae LEE , Sung-Ho JIN
IPC分类号： H01L51/00
CPC分类号： H01L51/0085 , C07F15/0033 , C09K11/06 , C09K2211/1029 , C09K2211/1044 , C09K2211/185 , H01L51/5016
摘要： Embodiments are directed to an organometallic complex and an organic light-emitting diode including the organometallic complex. The organometallic complex may be represented by Formula 1:
摘要翻译：实施例涉及有机金属络合物和包括有机金属络合物的有机发光二极管。有机金属络合物可以由式1表示：

4. 发明申请

US20080277714A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080277714A1
公开(公告)日：2008-11-13
申请号：US11965599
申请日：2007-12-27
申请人： Jae-Hong KIM
发明人： Jae-Hong KIM
IPC分类号： H01L27/088 , H01L21/762
CPC分类号： H01L27/115 , H01L27/11521
摘要： A nonvolatile memory device includes a control gate formed along a first direction over a substrate, an active region formed over the substrate, the active region being defined along a second direction crossing the control gate and including a fin type protruding portion having rounded top corners at a region where the control gate and the active region overlap, a floating gate formed over a surface of the protruding portion of the active region below the control gate and formed to a substantially uniform thickness along the surface profile of the protruding portion of the active region, a tunneling insulation layer formed between the floating gate and the active region, and a dielectric layer formed between the floating gate and the control gate.
摘要翻译：非易失性存储器件包括沿衬底上的第一方向形成的控制栅极，形成在衬底上的有源区域，有源区域沿着与控制栅极交叉的第二方向限定，并且包括翅片型突出部分，其具有圆形顶角，控制栅极和有源区域重叠的区域，浮动栅极，形成在控制栅极下方的有源区域的突出部分的表面上，并且沿着有源区域的突出部分的表面轮廓形成为基本均匀的厚度形成在浮栅和有源区之间的隧道绝缘层，以及形成在浮栅和控制栅之间的介电层。

5. 发明申请

US20120102019A1 METHOD AND APPARATUS FOR CRAWLING WEBPAGES 审中-公开
标题翻译：用于克服边缘的方法和装置
公开(公告)号：US20120102019A1
公开(公告)日：2012-04-26
申请号：US13116785
申请日：2011-05-26
申请人： Seung-hyun YOON , Seung-ryoul MAENG , Jae-hyuk HUH , Sang-won SEO , Jae-Hong KIM , Jong-se PARK
发明人： Seung-hyun YOON , Seung-ryoul MAENG , Jae-hyuk HUH , Sang-won SEO , Jae-Hong KIM , Jong-se PARK
IPC分类号： G06F17/30
CPC分类号： G06F16/951
摘要： A method and apparatus for crawling webpages are provided. The method and apparatus involve obtaining a root Web address list; obtaining a list of Web addresses linked to the root Web address list; evaluating content of pages of the Web addresses based on the obtained list of Web addresses; adjusting a crawling depth according to the evaluation of the content of the pages of the Web addresses; and crawling webpages according to the adjusted crawling depth.
摘要翻译：提供了一种用于抓取网页的方法和装置。所述方法和装置包括获得根Web地址列表; 获取链接到根Web地址列表的Web地址列表; 基于所获得的Web地址列表来评估Web地址的页面的内容; 根据Web地址页面内容的评估调整爬行深度; 并根据调整的爬行深度抓取网页。

6. 发明申请

US20120043545A1 THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管显示面板及其制造方法
公开(公告)号：US20120043545A1
公开(公告)日：2012-02-23
申请号：US13010656
申请日：2011-01-20
申请人： Hyung-Jun KIM , Chang-Oh JEONG , Jae-Hong KIM
发明人： Hyung-Jun KIM , Chang-Oh JEONG , Jae-Hong KIM
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/6675 , G02F1/136213 , G02F1/136286 , G02F2001/13629 , H01L27/124 , H01L29/42384
摘要： A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.
摘要翻译：薄膜晶体管显示面板包括衬底，衬底上的栅极线，并且包括栅极线和栅电极; 栅极线上的栅极绝缘层; 栅极绝缘层上的半导体层; 数据线，包括半导体层上的源电极，与源电极相对于栅电极相对的漏电极和数据线; 数据线上的钝化层具有暴露漏电极的接触孔; 以及钝化层上的像素电极，并通过接触孔与漏电极连接。栅极线分别具有栅极线和栅电极所在的第一区域和第二区域。第一区域中的栅极线的厚度大于第二区域中的栅极线的厚度。

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