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1. 发明授权

US08476700B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08476700B2
公开(公告)日：2013-07-02
申请号：US12656671
申请日：2010-02-12
申请人： Young-Mok Kim , Sun-Hak Lee , Tae-Cheol Lee , Yong-Sang Jeong
发明人： Young-Mok Kim , Sun-Hak Lee , Tae-Cheol Lee , Yong-Sang Jeong
IPC分类号： H01L29/66
CPC分类号： H01L29/4236 , H01L21/823456 , H01L21/823462 , H01L29/1037 , H01L29/7834
摘要： A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.
摘要翻译：半导体器件包括衬底中的凹槽，栅极绝缘层包括第一部分和第二部分，第一部分具有第一厚度并覆盖凹槽的侧壁的下部和凹槽的底表面，并且所述第二部分具有第二厚度并且覆盖所述凹槽的侧壁的上部，所述第二厚度大于所述第一厚度，填充所述凹陷沟槽的栅电极，具有第一浓度的第一杂质区域并且设置在相对的位置栅极电极的侧面，以及具有大于第一浓度的第二浓度的第二杂质区域，并且设置在第一杂质区域上以对应于栅极绝缘层的第二部分。

2. 发明申请

US20100207204A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100207204A1
公开(公告)日：2010-08-19
申请号：US12656671
申请日：2010-02-12
申请人： Young-Mok Kim , Sun-Hak Lee , Tae-Cheol Lee , Yong-Sang Jeong
发明人： Young-Mok Kim , Sun-Hak Lee , Tae-Cheol Lee , Yong-Sang Jeong
IPC分类号： H01L29/78
CPC分类号： H01L29/4236 , H01L21/823456 , H01L21/823462 , H01L29/1037 , H01L29/7834
摘要： A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.
摘要翻译：半导体器件包括衬底中的凹槽，栅极绝缘层包括第一部分和第二部分，第一部分具有第一厚度并覆盖凹槽的侧壁的下部和凹槽的底表面，并且所述第二部分具有第二厚度并且覆盖所述凹槽的侧壁的上部，所述第二厚度大于所述第一厚度，填充所述凹陷沟槽的栅电极，具有第一浓度的第一杂质区域并且设置在相对的位置栅极电极的侧面，以及具有大于第一浓度的第二浓度的第二杂质区域，并且设置在第一杂质区域上以对应于栅极绝缘层的第二部分。

3. 发明授权

US08101482B2 Method of fabricating semiconductor device having transistor 有权
标题翻译：制造具有晶体管的半导体器件的方法
公开(公告)号：US08101482B2
公开(公告)日：2012-01-24
申请号：US12656544
申请日：2010-02-03
申请人： Young-Mok Kim
发明人： Young-Mok Kim
IPC分类号： H01L21/8242
CPC分类号： H01L21/26513 , H01L21/823456 , H01L21/82385 , H01L29/4236 , H01L29/66553 , H01L29/66621
摘要： Provided is a method of fabricating a semiconductor device having a transistor. The method includes forming a first gate trench in a first active region of a semiconductor substrate. A first gate layer partially filling the first gate trench is formed. Ions may be implanted in the first gate layer and in the first active region on both sides of the first gate layer such that the first gate layer becomes a first gate electrode of a first conductivity type and first impurity regions of the first conductivity type are formed on both sides of the first gate electrode.
摘要翻译：提供一种制造具有晶体管的半导体器件的方法。该方法包括在半导体衬底的第一有源区中形成第一栅极沟槽。形成部分地填充第一栅极沟槽的第一栅极层。可以将离子注入第一栅极层和第一栅极层两侧的第一有源区中，使得第一栅极层成为第一导电类型的第一栅电极，并且形成第一导电类型的第一杂质区在第一栅电极的两侧。

4. 发明申请

US20100197090A1 Method of fabricating semiconductor device having transistor 有权
标题翻译：制造具有晶体管的半导体器件的方法
公开(公告)号：US20100197090A1
公开(公告)日：2010-08-05
申请号：US12656544
申请日：2010-02-03
申请人： Young-Mok Kim
发明人： Young-Mok Kim
IPC分类号： H01L21/8238
CPC分类号： H01L21/26513 , H01L21/823456 , H01L21/82385 , H01L29/4236 , H01L29/66553 , H01L29/66621
摘要： Provided is a method of fabricating a semiconductor device having a transistor. The method includes forming a first gate trench in a first active region of a semiconductor substrate. A first gate layer partially filling the first gate trench is formed. Ions may be implanted in the first gate layer and in the first active region on both sides of the first gate layer such that the first gate layer becomes a first gate electrode of a first conductivity type and first impurity regions of the first conductivity type are formed on both sides of the first gate electrode.
摘要翻译：提供一种制造具有晶体管的半导体器件的方法。该方法包括在半导体衬底的第一有源区中形成第一栅极沟槽。形成部分地填充第一栅极沟槽的第一栅极层。可以将离子注入第一栅极层和第一栅极层两侧的第一有源区中，使得第一栅极层成为第一导电类型的第一栅电极，并且形成第一导电类型的第一杂质区在第一栅电极的两侧。

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