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    • 1. 发明授权
    • Transparent multilayer sheet having electrostatic dissipative properties
    • 具有静电耗散性的透明多层片材
    • US08808843B2
    • 2014-08-19
    • US12810323
    • 2008-12-22
    • Hwa Yong LeeTae Woong LeeDong Sik KimNam Jung KimYoung Woo Kim
    • Hwa Yong LeeTae Woong LeeDong Sik KimNam Jung KimYoung Woo Kim
    • B32B7/02
    • C08G18/0895B32B27/08B32B27/40C08G18/4833C08G18/6674C08G18/73C08G18/7671Y10T428/24942Y10T428/24967Y10T428/31551Y10T428/31725
    • Disclosed is a transparent multilayer sheet that is excellent in antistatic properties, as well as transparency. The transparent multilayer sheet includes a surface layer comprising a conductive thermoplastic polyurethane or polyurea resin containing ethylene oxide; and a back layer attached to the surface layer and comprising a transparent non-conductive polymer resin. Preferably, the polyurethane or polyurea resin is a polymerization product of (a) a polyether-based polymer containing ethylene oxide and reacting with an isocyanate group; (b) an aromatic or aliphatic diisocyanate compound; and (c) a chain extender C2 to C10 containing a primary hydroxyl group or an amine group, and the transparent non-conductive polymer resin is selected from the group consisting of polyethylene terephthalate, glycol modified polyethylene tereph-thalate, glycol modified polycyclohexaneterephthalate, polymethylmethacrylate, polycarbonate, transparent acrylonitrile-butadiene-styrene (ABS), and mixtures thereof.
    • 公开了抗静电性能以及透明性优异的透明多层片材。 透明多层片材包括含有导电性热塑性聚氨酯或含有环氧乙烷的聚脲树脂的表面层; 以及附着到表面层并包含透明非导电聚合物树脂的背层。 优选地,聚氨酯或聚脲树脂是(a)含有环氧乙烷并与异氰酸酯基反应的聚醚类聚合物的聚合产物; (b)芳族或脂族二异氰酸酯化合物; 和(c)含有伯羟基或胺基的扩链剂C2至C10,透明非导电聚合物树脂选自聚对苯二甲酸乙二醇酯,二醇改性聚对苯二甲酸乙二醇酯,二醇改性聚环己烷对苯二甲酸酯,聚甲基丙烯酸甲酯 ,聚碳酸酯,透明丙烯腈 - 丁二烯 - 苯乙烯(ABS)及其混合物。
    • 8. 发明授权
    • Nitride based semiconductor light emitting device
    • 基于氮化物的半导体发光器件
    • US08759815B2
    • 2014-06-24
    • US13818572
    • 2011-09-01
    • Seong Ran JeonYoung Ho SongJae Bum KimYoung Woo KimWoo Young CheonJin Hong Kim
    • Seong Ran JeonYoung Ho SongJae Bum KimYoung Woo KimWoo Young CheonJin Hong Kim
    • H01L33/04
    • H01L33/12H01L33/04H01L33/06H01L33/14H01L33/32
    • The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.
    • 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件,这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层,形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段,应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外,应变控制层的能带隙小于有源层的量子势垒的能带隙。