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    • 6. 发明授权
    • Method of fabricating a thin film transistor array panel
    • 制造薄膜晶体管阵列面板的方法
    • US07524706B2
    • 2009-04-28
    • US11844597
    • 2007-08-24
    • Je Hun LeeYang Ho BaeBeom Seok ChoChang Oh Jeong
    • Je Hun LeeYang Ho BaeBeom Seok ChoChang Oh Jeong
    • H01L21/00
    • H01L29/458G02F1/1368H01L27/12H01L27/124H01L27/1288
    • A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.
    • 薄膜晶体管阵列面板包括由Mo合金层和Cu层构成的源电极和漏电极,Mo合金层的合金元素形成氮化物层作为对Cu层的扩散阻挡层。 可以在Mo合金层和Cu层之间,Mo合金层和半导体层之间或Mo合金层中形成氮化物层。 制造薄膜晶体管阵列面板的方法包括:形成具有第一导电层和第二导电层的数据线,所述第一导电层含有Mo合金,所述第二导电层含有Cu,并进行氮处理,使得 第一导电层中的合金元素形成氮化物层。 在形成第一导电层之前,在形成第一导电层之后,或者在形成第一导电层期间,可以进行氮处理。
    • 8. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US07276732B2
    • 2007-10-02
    • US11234470
    • 2005-09-23
    • Je Hun LeeYang Ho BaeBeom Seok ChoChang Oh Jeong
    • Je Hun LeeYang Ho BaeBeom Seok ChoChang Oh Jeong
    • H01L29/04
    • H01L29/458G02F1/1368H01L27/12H01L27/124H01L27/1288
    • A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.
    • 薄膜晶体管阵列面板包括由Mo合金层和Cu层构成的源电极和漏电极,Mo合金层的合金元素形成氮化物层作为对Cu层的扩散阻挡层。 可以在Mo合金层和Cu层之间,Mo合金层和半导体层之间或Mo合金层中形成氮化物层。 制造薄膜晶体管阵列面板的方法包括:形成具有第一导电层和第二导电层的数据线,所述第一导电层含有Mo合金,所述第二导电层含有Cu,并进行氮处理,使得 第一导电层中的合金元素形成氮化物层。 在形成第一导电层之前,在形成第一导电层之后,或者在形成第一导电层期间,可以进行氮处理。