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    • 5. 发明授权
    • LED package module
    • LED封装模块
    • US08183583B2
    • 2012-05-22
    • US12571754
    • 2009-10-01
    • Suk Ho JungHyung Kun KimHak Hwan KimYoung Jin LeeHo Sun Paek
    • Suk Ho JungHyung Kun KimHak Hwan KimYoung Jin LeeHo Sun Paek
    • H01L33/00
    • H01L25/0753H01L33/486H01L33/504H01L33/508H01L2224/48091H01L2224/48235H01L2924/00014
    • An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion. Accordingly, a reduction in luminous efficiency of an LED caused by yellowing is prevented to thereby increase luminous efficiency and achieve a reduction in size.
    • 根据本发明的一个方面的LED封装模块可以包括:其上具有预定电极的基板; 安装在基板上的多个LED芯片,以预定间隔彼此分开,并与电极电连接; 围绕所述多个LED芯片中的至少一个模制的第一颜色树脂部分; 围绕除了第一着色树脂部分成型的LED芯片之外的所有LED芯片的第二颜色树脂部分模制,并且具有与第一着色树脂部分不同的颜色; 以及第三颜色树脂部分,其包围第一着色树脂部分和第二颜色树脂部分,并且具有与第一着色树脂部分和第二着色树脂部分不同的颜色。 因此,防止由黄化引起的LED的发光效率的降低,从而提高发光效率并实现尺寸的减小。
    • 10. 发明授权
    • Method of fabricating a non-volatile memory device
    • 制造非易失性存储器件的方法
    • US07585730B1
    • 2009-09-08
    • US12164721
    • 2008-06-30
    • Seok Pyo SongDong Sun SheenYoung Jin LeeMi Ri LeeChi Ho KimGil Jae ParkBo Min Seo
    • Seok Pyo SongDong Sun SheenYoung Jin LeeMi Ri LeeChi Ho KimGil Jae ParkBo Min Seo
    • H01L21/8247
    • H01L29/7881H01L21/28273H01L27/115H01L27/11521H01L29/42324
    • A method of fabricating a non-volatile memory device includes forming a tunneling layer and a conductive layer on a semiconductor substrate, and patterning the conductive layer, the tunneling layer, and the semiconductor substrate to form a conductive pattern, a tunneling pattern, and a trench in the semiconductor substrate. The method also includes filling the trench with a insulating material, and exposing a partial sidewall of the conductive pattern. The method further includes recessing the exposed partial sidewall of the conductive pattern in an inward direction to form a floating gate. The floating gate includes a base portion and a protruding portion having a width smaller than that of the base portion. The method also includes etching the insulating layer to form an isolation layer that exposes the base portion of the floating gate. Still further, the method includes forming a dielectric layer, that extends along the base and protruding portions of the floating gate, and a control gate that covers the base and protruding portions of the floating gate.
    • 一种制造非易失性存储器件的方法包括在半导体衬底上形成隧道层和导电层,并且对导电层,隧道层和半导体衬底进行构图以形成导电图案,隧道图案和 沟槽在半导体衬底中。 该方法还包括用绝缘材料填充沟槽,以及暴露导电图案的部分侧壁。 该方法还包括将导电图案的暴露部分侧壁向内凹入以形成浮动栅极。 浮动门包括基部和具有小于基部的宽度的突出部分。 该方法还包括蚀刻绝缘层以形成暴露浮动栅极的基部的隔离层。 此外,该方法包括形成沿着基极延伸的电介质层和浮动栅极的突出部分,以及覆盖浮动栅极的基部和突出部分的控制栅极。