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1. 发明申请

US20120103027A1 Washing machine 审中-公开
标题翻译：洗衣机
公开(公告)号：US20120103027A1
公开(公告)日：2012-05-03
申请号：US13317464
申请日：2011-10-19
申请人： Young Jae Kim , Doo Young Ryu , Won Young Jung
发明人： Young Jae Kim , Doo Young Ryu , Won Young Jung
IPC分类号： D06F21/00 , D06F37/20
CPC分类号： D06F37/00 , D06F37/225
摘要： A washing machine includes a tub to contain water and a drum rotatably installed within the tub. The drum includes a cylindrical body and a front member made of resin, provided with a disc-shaped race formed therein and covering the front surface of the body. The race of the front member and a mass body in the race function as a balancer.
摘要翻译：洗衣机包括容纳水的桶和可旋转地安装在桶内的桶。滚筒包括圆柱形主体和由树脂制成的前部构件，该前部构件设置有形成在其中并且覆盖主体前表面的圆盘形座圈。前面的成员和一个身体在比赛中的比赛作为一个平衡器。

2. 发明申请

US20100169058A1 MODELING STRUCTURE FOR SIMULATION OF TRAPEZOIDAL METAL LINE 审中-公开
标题翻译：用于模拟铁皮金属线的建模结构
公开(公告)号：US20100169058A1
公开(公告)日：2010-07-01
申请号：US12649168
申请日：2009-12-29
申请人： Chan Ho Park , Won Young Jung , Sung Gon Cho
发明人： Chan Ho Park , Won Young Jung , Sung Gon Cho
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： Embodiments relate to a semiconductor technology, and more particularly, to a modeling structure for simulation of a trapezoidal metal line. The modeling structure for simulation of a trapezoidal metal line includes a top step with a width A, a bottom step with a width B, a middle step with a width equal to an average of the width A and the width B, and a total height C, wherein the middle step has a height equal to a value obtainable by subtracting both a height of the top step and a height of the bottom step from the total height C.
摘要翻译：实施例涉及半导体技术，更具体地，涉及用于模拟梯形金属线的建模结构。用于模拟梯形金属线的建模结构包括具有宽度A的顶部台阶，具有宽度B的底部台阶，宽度等于宽度A和宽度B的平均宽度的中间台阶，以及总高度 C，其中中间台阶的高度等于从总高度C减去顶部台阶的高度和底部台阶的高度可获得的值。

3. 发明授权

US5798291A Method of making a semiconductor device with recessed source and drain 失效
标题翻译：制造具有凹陷源和漏极的半导体器件的方法
公开(公告)号：US5798291A
公开(公告)日：1998-08-25
申请号：US831343
申请日：1997-04-01
申请人： Joon Sung Lee , Won Young Jung
发明人： Joon Sung Lee , Won Young Jung
IPC分类号： H01L21/336 , H01L29/08 , H01L29/417 , H01L29/45 , H01L29/78
CPC分类号： H01L29/66636 , H01L29/0847 , H01L29/41766 , H01L29/41783 , H01L29/456 , H01L29/7833
摘要： This invention relates to a semiconductor device and method for fabricating the semiconductor device, for forming a source and drain structure having no side diffusion. The semiconductor device includes a silicon substrate, a gate formed on the silicon substrate with a gate insulation film in between, and a source and drain formed of conductive material layers buried in the substrate to a designated depth at opposite sides of the gate, thereby providing a source with no side diffusion, preventing reduction of channel length, and improving element integration.
摘要翻译：本发明涉及一种用于制造半导体器件的半导体器件和方法，用于形成没有侧向扩散的源极和漏极结构。半导体器件包括硅衬底，形成在硅衬底上的栅极，其间具有栅极绝缘膜，以及由埋在衬底中的导电材料层形成的源极和漏极到栅极的相对侧处的指定深度，从而提供没有侧面扩散的源，防止通道长度的减少，并且改善元件集成。

4. 发明授权

US5729496A Nonvolatile semiconductor memory element and method for fabricating the same 失效
标题翻译：非易失性半导体存储元件及其制造方法
公开(公告)号：US5729496A
公开(公告)日：1998-03-17
申请号：US698247
申请日：1996-08-15
申请人： Won Young Jung
发明人： Won Young Jung
IPC分类号： H01L27/10 , H01L21/8247 , H01L27/115 , G11C13/00
CPC分类号： H01L27/11517 , H01L27/115
摘要： This invention relates to a nonvolatile semiconductor memory element having elevated source and drain regions, a well-shaped floating gate surrounding a control gate, and leveled surface, and a method for fabricating the same. The nonvolatile semiconductor memory element includes a first conduction type substrate having a channel region, an elevated source and drain regions of second conduction type formed to have a step on the substrate separated by the channel region, a floating gate insulation film formed on exposed surfaces of the substrate corresponding to the channel region and the source and drain regions, as well-shaped floating gate formed on the floating gate insulation film on the channel region having a fixed depth and a fixed thickness, a control gate having a fixed thickness formed fully buried in the well of the floating gate so that the floating gate can surround the control gate, and an interlayer insulation film formed between the floating gate and the control gate so as to insulate the floating gate and the control gate.
摘要翻译：本发明涉及一种具有升高的源极和漏极区域的非易失性半导体存储元件，围绕控制栅极的平坦的浮动栅极和平整的表面及其制造方法。非易失性半导体存储元件包括具有通道区域的第一导电型衬底，形成为具有由沟道区域分离的衬底上的台阶的第二导电类型的升高的源极和漏极区域，形成在沟道区域的暴露表面上的浮置栅极绝缘膜对应于通道区域和源极和漏极区域的衬底，以及形成在具有固定深度和固定厚度的沟道区域上的浮栅绝缘膜上形成的形状浮动栅极，具有固定厚度的控制栅极完全埋入在浮栅的阱中，使得浮栅可以围绕控制栅极，以及形成在浮栅和控制栅之间的层间绝缘膜，以使浮栅和控制栅绝缘。

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