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1. 发明申请

US20070268599A1 ASPHERIC PLASTIC LENS AND MOLD FOR MANUFACTURING THE SAME 失效
标题翻译：普通塑料镜片及其制造模具
公开(公告)号：US20070268599A1
公开(公告)日：2007-11-22
申请号：US11679717
申请日：2007-02-27
申请人： Young Ho LEE , Kwang Yun CHOI , Jin Su SEOK
发明人： Young Ho LEE , Kwang Yun CHOI , Jin Su SEOK
IPC分类号： G02B3/02 , B28B7/00
CPC分类号： G02B13/18 , B29D11/00019
摘要： An aspheric plastic lens comprises a spherical surface portion having upper and lower portions at the center thereof, the upper and lower portions having curved surfaces with a different curvature, respectively; a rib formed in a circular plate shape so as to extend from the peripheral edge of the spherical surface portion to the outside, the rib having burrs formed to project on the edges of the upper and lower surfaces thereof; and a pair of two-stage step portions formed on the upper and lower surfaces of the rib, the two-stage step portions being formed symmetrically with each other.
摘要翻译：非球面塑料透镜包括在其中心具有上部和下部的球形表面部分，上部和下部分别具有不同曲率的曲面; 形成为从球面部的周缘延伸到外侧的圆板状的肋，所述肋具有形成为突出在其上表面和下表面的边缘的毛刺; 以及形成在所述肋的上表面和下表面上的一对两级台阶部，所述两级台阶部彼此对称地形成。

2. 发明申请

US20220314261A1 ULTRASONIC SPRAY APPARATUS THAT BLOCKS AIR CONTACT TO PREVENT CHANGES IN PROPERTIES OF IONIZED WATER 有权
公开(公告)号：US20220314261A1
公开(公告)日：2022-10-06
申请号：US17641572
申请日：2019-12-18
申请人： Sung Ho LEE , Young Ho LEE
发明人： Sung Ho LEE , Young Ho LEE
IPC分类号： B05B17/06 , C02F1/461 , C02F1/467
摘要： An ultrasonic spray apparatus is configured to minimize contact between bubbles, which are generated due to ultrasonic excitation, and ionized water when the bubbles are discharged. The ultrasonic spray apparatus is configured so that a discharge pipe is installed to start from a bottom or a side surface of an accommodation space storing ionized water and protrude above the ionized water filled in the accommodation space. The bubbles are able to be discharged into the accommodation space through the discharge pipe. Changes in properties of the ionized water may be prevented. The properties of the ionized water may be utilized as they are. The discharge of the bubbles is possible even when anyone of the branched portions is blocked, and interference with a flow of the bubbles is prevented in advance even when water drops or the like generated inside the accommodation space block any one of the branched portions.

3. 发明申请

US20120305876A1 SCHOTTKY DIODE, RESISTIVE MEMORY DEVICE HAVING SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：肖特基二极管，具有肖特基二极管的电阻式存储器件及其制造方法
公开(公告)号：US20120305876A1
公开(公告)日：2012-12-06
申请号：US13331698
申请日：2011-12-20
申请人： Seung Beom BAEK , Young Ho LEE , Jin Ku LEE , Mi Ri LEE
发明人： Seung Beom BAEK , Young Ho LEE , Jin Ku LEE , Mi Ri LEE
IPC分类号： H01L45/00 , H01L29/872 , H01L21/02 , H01L29/04
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2409 , H01L29/872 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1683
摘要： A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer.
摘要翻译：肖特基二极管，包括肖特基二极管的电阻式存储器件及其制造方法。电阻式存储器件包括一个包括字线，形成在字线上的肖特基二极管和形成在肖特基二极管上的存储层的半导体衬底。肖特基二极管包括第一半导体层，形成在第一半导体层上并具有比第一半导体层低的功函数的导电层和形成在导电层上的第二半导体层。

4. 发明申请

US20080242030A1 METHOD FOR MANUFACTURING FIN TRANSISTOR THAT PREVENTS ETCHING LOSS OF A SPIN-ON-GLASS INSULATION LAYER 失效
标题翻译：用于制造防止旋转玻璃绝缘层损失的FIN晶体管的方法
公开(公告)号：US20080242030A1
公开(公告)日：2008-10-02
申请号：US11965835
申请日：2007-12-28
申请人： Dong Sun SHEEN , Seok Pyo SONG , Young Ho LEE
发明人： Dong Sun SHEEN , Seok Pyo SONG , Young Ho LEE
IPC分类号： H01L21/336
CPC分类号： H01L29/66795 , H01L29/7851
摘要： A method for manufacturing a fin transistor includes forming a trench by etching a semiconductor substrate. A flowable insulation layer is filled in the trench to form a field insulation layer defining an active region. The portion of the flowable insulation layer coming into contact with a gate forming region is etched so as to protrude the gate forming region in the active region. A protective layer over the semiconductor substrate is formed to fill the portion of the etched flowable insulation layer. The portion of the protective layer formed over the active region is removed to expose the active region of the semiconductor substrate. The exposed active region of the semiconductor substrate is cleaned. The protective layer remaining on the portion of the etched flowable insulation layer is removed. Gates are formed over the protruded gate forming regions in the active region.
摘要翻译：一种制造鳍式晶体管的方法包括：通过蚀刻半导体衬底形成沟槽。可流动的绝缘层填充在沟槽中以形成限定有源区的场绝缘层。与栅极形成区域接触的可流动绝缘层的部分被蚀刻以便在有源区域中突出栅极形成区域。形成半导体衬底上方的保护层以填充该可蚀刻的可流动绝缘层的部分。在有源区上形成的保护层的部分被去除以暴露半导体衬底的有源区。清洁半导体衬底的暴露的有源区。残留在可蚀刻的可流动绝缘层的部分上的保护层被去除。在活性区域中的突出的栅极形成区域上形成栅极。

5. 发明申请

US20080185663A1 SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL LENGTH AND WIDTH AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：具有增加的通道长度和宽度的半导体器件及其制造方法
公开(公告)号：US20080185663A1
公开(公告)日：2008-08-07
申请号：US11941194
申请日：2007-11-16
申请人： Seok Pyo SONG , Dong Sun SHEEN , Young Ho LEE
发明人： Seok Pyo SONG , Dong Sun SHEEN , Young Ho LEE
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66621 , H01L29/4236
摘要： A semiconductor device includes a semiconductor substrate having an active region including a channel portion. An isolation layer is formed in the semiconductor substrate to define the active region, and a gate is formed over the channel portion in the active region. The active region of the semiconductor substrate is etched to such that the entire active region is below an upper surface of the isolation layer. A U-shaped groove is formed in the channel portion of the active region, except the edges in a direction of the channel width thereof, in order to increase the channel width. In the semiconductor device, there is an increase in channel length and channel width leading to a reduction in leakage current and on increase in operation current.
摘要翻译：半导体器件包括具有包括沟道部分的有源区的半导体衬底。在半导体衬底中形成隔离层以限定有源区，并且在有源区中的沟道部分之上形成栅极。蚀刻半导体衬底的有源区，使得整个有源区在隔离层的上表面下方。为了增加通道宽度，在活性区域的通道部分中形成U形槽，除了其通道宽度方向上的边缘之外。在半导体器件中，通道长度和通道宽度增加，导致漏电流的减小和工作电流的增加。

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