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    • 1. 发明授权
    • Hybrid light emitting diode chip and light emitting diode device having the same, and manufacturing method thereof
    • 混合发光二极管芯片和具有这种发光二极管的发光二极管装置及其制造方法
    • US08816365B2
    • 2014-08-26
    • US12972584
    • 2010-12-20
    • Young Gi HongSeung Ho JangWon Ho Kim
    • Young Gi HongSeung Ho JangWon Ho Kim
    • H01L33/58
    • H01L33/382H01L33/0079H01L33/22H01L33/486H01L33/62H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/49107H01L2933/0016H01L2924/00014H01L2924/00
    • Disclosed is a hybrid LED chip: comprising a first clad layer of P-type semiconductor material; a second clad layer of N-type semiconductor material; an active layer between the first and second clad layers; a first bonding metal layer on the first clad layer; a second bonding metal layer on the second clad layer; a ceramic substrate positioned on and bonded to the first and second bonding metal layers, wherein the ceramic substrate includes at least one first via hole to expose the first bonding metal layer, and at least one second via hole to expose the second bonding metal layer; a P-type electrode formed by burying a conductive material in the at least one first via hole; and an N-type electrode formed by burying a conductive material in the at least one second via hole, wherein the first and second via holes in the ceramic substrate are formed in cylindrical shapes, and the circumferential surface of each cylindrical shape is provided with an intaglio pattern.
    • 公开了一种混合LED芯片:包括P型半导体材料的第一覆盖层; N型半导体材料的第二覆盖层; 在第一和第二包层之间的有源层; 在所述第一包层上的第一接合金属层; 在所述第二包覆层上的第二接合金属层; 位于第一和第二接合金属层上并结合到陶瓷衬底上的陶瓷衬底,其中陶瓷衬底包括至少一个用于暴露第一接合金属层的第一通孔和至少一个第二通孔以暴露第二接合金属层; 通过在所述至少一个第一通孔中埋入导电材料形成的P型电极; 以及通过在至少一个第二通孔中埋入导电材料形成的N型电极,其中陶瓷基板中的第一和第二通孔形成为圆柱形,并且每个圆柱形的圆周表面设置有 凹版图案
    • 7. 发明申请
    • Method of preparing rhenium-tricarbonyl complex and its precursor
    • 制备铼三羰基络合物及其前体的方法
    • US20070140959A1
    • 2007-06-21
    • US11471910
    • 2006-06-20
    • Sang Hyun ParkSeung Ho JangMyung Woo Byun
    • Sang Hyun ParkSeung Ho JangMyung Woo Byun
    • A61K51/00C07F13/00
    • C01G47/00A61K51/0402A61K51/0474A61K51/0476A61K51/1282C01G47/003C01P2002/87
    • Disclosed herein is a method of preparing a 188Re-tricarbonyl complex for radiopharmaceutical use and of preparing a precursor thereof, and a contrast agent using the same. Particularly, this invention provides a method of preparing a 188Re-tricarbonyl precursor by reacting perrhenate with borane-ammonia (BH3.NH3), potassium boranocarbonate (K2[H3BCO2]) and phosphate in the presence of borohydride exchange resin as a reducing agent, and a method of preparing a 188Re-tricarbonyl complex by reacting the 188Re-tricarbonyl precursor with a ligand. According to the method of this invention, the borohydride exchange resin is used as a reducing agent and as an anion scavenger, thereby obtaining the 188Re-tricarbonyl precursor and complex having high radiolabeling yield and high purity. In addition, the 188Re-tricarbonyl complex can be used as a contrast agent having excellent plasma stability.
    • 本发明公开了一种制备用于放射性药物使用的188重复三羰基络合物和制备其前体的方法,以及使用其的造影剂。 特别地,本发明提供了一种通过使高铼酸盐与硼烷 - 氨(BH 3 N,NH 3)反应制备188重复三羰基前体的方法, 硼酸氢钾(K 2 H 3 BCO 2))和磷酸盐在硼氢化物交换树脂作为还原剂存在下反应,和 通过使188重复三羰基前体与配体反应制备188重复三羰基络合物的方法。 根据本发明的方法,使用硼氢化物交换树脂作为还原剂和阴离子清除剂,从而获得具有高放射性标记产率和高纯度的重氮三羰基前体和复合物。 另外,重复三羰基复合物可用作具有优异的等离子体稳定性的造影剂。