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1. 发明授权

US06239468B1 Sensor thin film transistor for an optical detecting sensor 有权
标题翻译：用于光学检测传感器的传感器薄膜晶体管
公开(公告)号：US06239468B1
公开(公告)日：2001-05-29
申请号：US09456389
申请日：1999-12-08
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
IPC分类号： H01L2701
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/458
摘要： A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.
摘要翻译：传感器TFT包括基板，形成在基板上的栅极电极，在绝缘层上图案化的半导体层，使用接收的光产生光电流，形成在半导体层上的源极和漏极，源极和漏极间隔开以及由源极和漏极之间的区域限定的导电沟道，其中导电沟道不是矩形的，使得沟道宽度在固定沟道长度上增加。

2. 发明授权

US06242769B1 Thin film transistor type photo sensor 有权
标题翻译：薄膜晶体管型光电传感器
公开(公告)号：US06242769B1
公开(公告)日：2001-06-05
申请号：US09453299
申请日：1999-12-03
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee , Jong Hoon Yi
IPC分类号： H01L31062
CPC分类号： H01L27/14678 , H01L29/78633
摘要： A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.
摘要翻译： TFT型光检测传感器包括用于通过检测从物体反射的光产生光电流的传感器TFT，用于存储光电流的电荷的存储电容器，以及用于控制存储在存储电容器中的电荷释放的开关TFT。存储电容器由透明导电材料制成，使得光从光源通过存储电容器传输到物体。

3. 发明授权

US06445003B1 Thin film transistor (TFT) type optical detecting sensor 有权
标题翻译：薄膜晶体管（TFT）型光学检测传感器
公开(公告)号：US06445003B1
公开(公告)日：2002-09-03
申请号：US09562446
申请日：2000-05-01
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim , Jae Kyun Lee
IPC分类号： H01L2904
CPC分类号： H01L29/78696 , H01L27/14609 , H01L27/14623 , H01L27/14692
摘要： A TFT type optical detecting sensor includes a capacitor, a sensor TFT, and a switching TFT each having an active layer with a channel having an elongated width. The width of the channel of the sensor TFT is substantially defined by a distance of a side of the pixel excluding the switching source wire and sensor drain wire. The first electrode of the capacitor of the optical detecting sensor is electrically connected to the sensor gate electrode of the sensor TFT.
摘要翻译： TFT型光检测传感器包括电容器，传感器TFT和开关TFT，每个TFT具有具有细长宽度的通道的有源层。传感器TFT的通道的宽度基本上由除开关源极线和传感器漏极线之外的像素的一侧的距离限定。光检测传感器的电容器的第一电极电连接到传感器TFT的传感器栅电极。

4. 发明授权

US06774396B1 Thin film transistor type optical sensor 有权
标题翻译：薄膜晶体管型光学传感器
公开(公告)号：US06774396B1
公开(公告)日：2004-08-10
申请号：US09487173
申请日：2000-01-19
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
IPC分类号： H01L2904
CPC分类号： G06K9/00107 , G06K9/0004 , G06K9/0012 , H01L31/1136
摘要： A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor, a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.
摘要翻译：图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管，用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗口的绝缘层，薄膜光电晶体管，存储电容器和薄膜开关晶体管，形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案，以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

5. 发明授权

US06906342B1 Thin film transistor type optical detecting sensor 有权
标题翻译：薄膜晶体管型光检测传感器
公开(公告)号：US06906342B1
公开(公告)日：2005-06-14
申请号：US09466961
申请日：1999-12-20
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Jae Kyun Lee
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Jae Kyun Lee
IPC分类号： H01L29/786 , H01L27/12 , H01L27/146 , H01L29/417 , H01L29/45 , H01L29/04
CPC分类号： H01L27/14601 , H01L27/12 , H01L27/14643 , H01L29/41733 , H01L29/458
摘要： An optical detecting sensor includes a sensor thin film transistor generating an optical current in response to incident light reflected from an object; a storage capacitor storing charges of the optical current generated in the sensor thin film transistor; and a switch thin film transistor controlling release of the stored charges of the storage capacitor to an outer circuit for display of image of the object, having dual-layered source and drain electrodes of transparent conducting material and metal material, an active layer and a gate electrode. The switch thin film transistor further includes an ohmic contact layer on the active layer through which the dual-layered drain and source electrodes contact the active layer.
摘要翻译：光检测传感器包括响应于从物体反射的入射光而产生光电流的传感器薄膜晶体管; 存储电容器，其存储在所述传感器薄膜晶体管中产生的光电流的电荷; 以及开关薄膜晶体管，其控制存储电容器的存储电荷释放到用于显示对象的图像的外部电路，具有透明导电材料和金属材料的双层源极和漏极，活性层和栅极电极。开关薄膜晶体管还包括有源层上的欧姆接触层，双层漏极和源电极通过该接触层与有源层接触。

6. 发明授权

US06953978B2 Thin film transistor type optical sensor 有权
标题翻译：薄膜晶体管型光学传感器
公开(公告)号：US06953978B2
公开(公告)日：2005-10-11
申请号：US10867823
申请日：2004-06-16
申请人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
发明人： Youn Gyoung Chang , Jeong Hyun Kim , Se June Kim
IPC分类号： G01J1/02 , G06K9/00 , H01L29/04 , H01L31/0232 , H01L31/036 , H01L31/113
CPC分类号： G06K9/00107 , G06K9/0004 , G06K9/0012 , H01L31/1136
摘要： A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor; a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.
摘要翻译：图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管，用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗户的绝缘层，薄膜光电晶体管，存储电容器和薄膜开关晶体管; 形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案，以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

7. 发明授权

US06512196B1 Laser cutting device and method for cutting glass substrate by using the same 有权
标题翻译：激光切割装置及其使用方法
公开(公告)号：US06512196B1
公开(公告)日：2003-01-28
申请号：US09665118
申请日：2000-09-20
申请人： Tae Hwan Yoon , Jeong Hyun Kim , Youn Gyoung Chang
发明人： Tae Hwan Yoon , Jeong Hyun Kim , Youn Gyoung Chang
IPC分类号： B23K2614
CPC分类号： C03B33/076 , B23K26/0823 , B23K26/16 , B23K26/364 , B23K26/40 , B23K2103/50 , B65G2249/04 , C03B33/03 , C03B33/091 , G02F1/1333 , Y02P40/57
摘要： Laser cutting device for cutting a glass substrate of a liquid crystal display, and methods for cutting a glass substrate using that device. The device includes a vacuum chuck rotatably mounted for securing bonded first and second substrates, a rotating member for rotating the vacuum chuck, and a laser for directing a laser beam onto the first and second substrates into cut the substrates held by the vacuum chuck.
摘要翻译：用于切割液晶显示器的玻璃基板的激光切割装置，以及使用该装置切割玻璃基板的方法。该装置包括可旋转地安装用于固定结合的第一和第二基板的真空卡盘，用于旋转真空卡盘的旋转构件和用于将激光束引导到第一和第二基板上的激光，以切割由真空卡盘保持的基板。

8. 发明授权

US08263442B2 Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof 有权
标题翻译：水平电场型液晶显示装置薄膜晶体管基板及其制造方法
公开(公告)号：US08263442B2
公开(公告)日：2012-09-11
申请号：US13289824
申请日：2011-11-04
申请人： Youn Gyoung Chang , Heung Lyul Cho
发明人： Youn Gyoung Chang , Heung Lyul Cho
IPC分类号： H01L21/82
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2001/136231
摘要： A thin film transistor substrate of horizontal electric field type liquid crystal display device includes: a gate line and a common line arranged in parallel on a substrate; a data line crossing the gate line and the common line to define a pixel area; a thin film transistor having a gate connected to the gate line and a source electrode connected to the data line; a common electrode extending from the common line into the pixel area; a protective film for covering a plurality of signal lines and electrodes and the thin film transistor; a pixel hole in the protective film having an elongated shape that parallels the common electrode; and a pixel electrode connected to a side surface of a drain electrode of the thin film transistor within the pixel hole.
摘要翻译：一种水平电场型液晶显示装置的薄膜晶体管基板，包括：平行布置在基板上的栅极线和公共线; 穿过所述栅极线和所述公共线以限定像素区域的数据线; 具有连接到栅极线的栅极和连接到数据线的源电极的薄膜晶体管; 从公共线延伸到像素区域中的公共电极; 用于覆盖多个信号线和电极的保护膜和薄膜晶体管; 保护膜中的像素孔具有与公共电极平行的细长形状; 以及与像素孔内的薄膜晶体管的漏电极的侧面连接的像素电极。

9. 发明授权

US08071984B2 Thin film transistor substrate for display device and fabricating method thereof 有权
标题翻译：用于显示装置的薄膜晶体管基板及其制造方法
公开(公告)号：US08071984B2
公开(公告)日：2011-12-06
申请号：US11588312
申请日：2006-10-27
申请人： Youn Gyoung Chang , Heung Lyul Cho
发明人： Youn Gyoung Chang , Heung Lyul Cho
IPC分类号： H01L31/00
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L27/1214 , H01L27/124 , H01L29/66765
摘要： A thin film transistor substrate for a display device having a plurality of thin film transistors and pixel electrodes connected to the thin film transistors, said thin film transistor substrate includes: a plurality of pad electrodes in a non-display area of the display device for applying signals to the plurality of thin film transistors in a non-display area of the display device; a protective film covering the pad electrodes in the non-display area; and a slit in the protective film adjacent to at least one of the plurality of pad electrodes.
摘要翻译：一种用于显示装置的薄膜晶体管基板，具有连接到所述薄膜晶体管的多个薄膜晶体管和像素电极，所述薄膜晶体管基板包括：在显示装置的非显示区域中的多个焊盘电极，用于施加信号到显示装置的非显示区域中的多个薄膜晶体管; 覆盖非显示区域中的焊盘电极的保护膜; 以及与所述多个焊盘电极中的至少一个相邻的保护膜中的狭缝。

10. 发明授权

US07816223B2 Alignment key, method for fabricating the alignment key, and method for fabricating thin film transistor substrate using the alignment key 有权
标题翻译：对准键，用于制造对准键的方法以及使用对准键制造薄膜晶体管衬底的方法
公开(公告)号：US07816223B2
公开(公告)日：2010-10-19
申请号：US12216064
申请日：2008-06-27
申请人： Youn Gyoung Chang , Seung Hee Nam , Nam Kook Kim , Soon Sung Yoo
发明人： Youn Gyoung Chang , Seung Hee Nam , Nam Kook Kim , Soon Sung Yoo
IPC分类号： H01L21/76 , H01L21/00
CPC分类号： H01L27/1288 , H01L23/544 , H01L27/1214 , H01L2223/5442 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： Provided are an alignment key, a method for fabricating the alignment key, and a method for fabricating a thin film transistor substrate using the alignment key. The method for fabricating the alignment key includes forming a first metal layer on a base substrate, forming a first alignment key and a first mark portion of a second alignment key by selectively patterning the first metal layer, forming a dielectric on the first metal layer, forming a second metal layer on the dielectric, and forming a second mark portion of the second alignment key on the dielectric by selectively patterning the second metal layer.
摘要翻译：提供了对准键，制造对准键的方法以及使用对准键制造薄膜晶体管基板的方法。制造对准键的方法包括在基底基板上形成第一金属层，通过选择性地图案化第一金属层形成第一对准键和第二对准键的第一标记部分，在第一金属层上形成电介质，在所述电介质上形成第二金属层，并且通过选择性地图案化所述第二金属层，在所述电介质上形成所述第二对准键的第二标记部分。

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