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1. 发明申请

US20100090107A1 METHOD AND HANDLING APPARATUS FOR PLACING PATTERNING DEVICE ON SUPPORT MEMBER FOR CHARGED PARTICLE BEAM IMAGING 有权
标题翻译：用于放置装载成像装置的装载装置的方法和处理装置
公开(公告)号：US20100090107A1
公开(公告)日：2010-04-15
申请号：US12249640
申请日：2008-10-10
申请人： You-Jin WANG , Hsuan-Bin HUANG , Chung-Shih PAN
发明人： You-Jin WANG , Hsuan-Bin HUANG , Chung-Shih PAN
IPC分类号： G21K5/10 , G01N23/00
CPC分类号： H01L21/68707 , H01J2237/204
摘要： A patterning device handling apparatus for use in charged particle beam imaging is disclosed. The disclosed patterning device handling apparatus comprises a first gripping member and a second gripping member. The first gripping member is equipped with a plurality of first positioning projections, and the second gripping member is equipped with a plurality of second positioning projections. When the patterning device is held at one angle, the first positioning projections abut against one edge of the patterning device and the second positioning projections abut against the opposite edge of the patterning device. When the patterning device is held at another angle, the first positioning projections abut against two neighboring edges of the patterning device, and the second positioning projections abut against the other two neighboring edges of the patterning device. Therefore, the disclosed patterning device handling apparatus can hold the pattering device at different angles.
摘要翻译：公开了一种用于带电粒子束成像的图案形成装置处理装置。所公开的图案形成装置处理装置包括第一夹持构件和第二夹持构件。第一夹持构件配备有多个第一定位突起，并且第二夹持构件配备有多个第二定位突起。当图案形成装置保持一角度时，第一定位突起抵靠图案形成装置的一个边缘，并且第二定位突起抵靠图案形成装置的相对边缘。当图案形成装置保持在另一个角度时，第一定位突起邻接图案形成装置的两个相邻边缘，并且第二定位突起抵靠图案形成装置的另外两个相邻的边缘。因此，所公开的图案形成装置处理装置可以以不同的角度保持图案装置。

2. 发明申请

US20120292509A1 STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 有权
标题翻译：用于排放超极本超薄膜的结构
公开(公告)号：US20120292509A1
公开(公告)日：2012-11-22
申请号：US13112536
申请日：2011-05-20
申请人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
发明人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
IPC分类号： H01J37/26 , H05F3/02
CPC分类号： H05F3/02 , G01N23/2251 , H01J37/026 , H01J37/20 , H01J2237/0041 , H01J2237/0044 , H01J2237/2008 , H01J2237/2811
摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
摘要翻译：提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

3. 发明申请

US20120006984A1 METHOD OF CONTROLLING PARTICLE ABSORPTION ON A WAFER SAMPLE BEING INSPECTED BY A CHARGED PARTICLE BEAM IMAGING SYSTEM 有权
标题翻译：通过充电颗粒光束成像系统检测的波形样品控制颗粒吸收的方法
公开(公告)号：US20120006984A1
公开(公告)日：2012-01-12
申请号：US13236108
申请日：2011-09-19
申请人： You-Jin WANG , Chung-Shih PAN
发明人： You-Jin WANG , Chung-Shih PAN
IPC分类号： H01J37/26 , H01J37/20
CPC分类号： H01L22/12 , H01J2237/204 , H01J2237/2817 , H01L2924/0002 , H01L2924/00
摘要： A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.
摘要翻译：控制晶片样品和带电粒子束成像系统上的颗粒吸收的方法通过在晶片样品中接地而防止颗粒吸收，并在转移和转移过程中保持电中性。

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