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1. 发明授权

US09153746B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09153746B2
公开(公告)日：2015-10-06
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/52 , H01L33/00 , H01L33/38 , H01L21/50
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译：根据实施例，半导体发光器件包括具有发光层的半导体层。该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

2. 发明申请

US20130285091A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130285091A1
公开(公告)日：2013-10-31
申请号：US13599892
申请日：2012-08-30
申请人： Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Hideyuki Tomizawa , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Hideyuki Tomizawa , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/50
CPC分类号： H01L33/44 , H01L33/005 , H01L33/0079 , H01L33/46 , H01L33/505 , H01L2933/0016
摘要： According to an embodiment, a method for manufacturing a semiconductor light emitting device includes steps for forming a fluorescent substance layer on a first face of a semiconductor layer and forming a light shielding film on the side face of the fluorescent substance layer. The fluorescent substance layer includes a resin and fluorescent substances dispersed in the resin, and have a light emitting face on a side opposite to the first face of the semiconductor layer and a side face connecting to the light emitting face with an angle of 90 degree or more between the light emitting face and the side face. The light shielding film shields a light emitted from a light emitting layer included in the semiconductor layer and a light radiated from the fluorescent substances.
摘要翻译：根据实施例，半导体发光器件的制造方法包括在半导体层的第一面上形成荧光体层并在荧光物质层的侧面形成遮光膜的工序。荧光物质层包括分散在树脂中的树脂和荧光物质，并且在与半导体层的第一面相反的一侧具有发光面，以及以90度的角连接到发光面的侧面，更多地在发光面和侧面之间。遮光膜屏蔽从半导体层中包含的发光层发射的光和从荧光物质辐射的光。

3. 发明授权

US08994030B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08994030B2
公开(公告)日：2015-03-31
申请号：US13598504
申请日：2012-08-29
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa , Yoshiaki Sugizaki
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/486 , H01L33/50
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，荧光体层和透明膜。半导体层具有第一面，与第一面相反的第二面和发光层。 p侧电极设置在包括发光层的区域的第二面上。 n侧电极设置在不包括发光层的区域的第二面上。磷光体层设置在第一面上。荧光体层包括分散在透明树脂中的透明树脂和荧光体。透明膜设置在荧光体层上，粘合性低于透明树脂的粘合性。

4. 发明授权

US08648375B2 Semiconductor light emitting device and light emitting module 失效
标题翻译：半导体发光器件和发光模块
公开(公告)号：US08648375B2
公开(公告)日：2014-02-11
申请号：US13601336
申请日：2012-08-31
申请人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L33/00
CPC分类号： H01L33/505
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

5. 发明授权

US08907357B2 Light emitting module 有权
标题翻译：发光模块
公开(公告)号：US08907357B2
公开(公告)日：2014-12-09
申请号：US13597055
申请日：2012-08-28
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L29/18
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/486 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/62 , H01L2224/16 , H01L2933/0091
摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.
摘要翻译：根据一个实施例，发光模块包括安装基板，多个发光芯片，透明层和荧光体层。透明层设置在安装面上的多个发光芯片和发光芯片之间。透明层具有至少分散在多个发光芯片之间的第一透明体中的第一透明体和散射剂。散射剂具有与第一透明体的折射率不同的折射率。荧光体层设置在透明层上。发光芯片包括半导体层，p侧电极，n侧电极，p侧外部端子和n侧外部端子。

6. 发明授权

US08872210B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08872210B2
公开(公告)日：2014-10-28
申请号：US13598393
申请日：2012-08-29
申请人： Hideto Furuyama , Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Yoshiaki Sugizaki
发明人： Hideto Furuyama , Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/40
CPC分类号： H01L33/504 , H01L24/97 , H01L33/46 , H01L33/501 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0091 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.
摘要翻译：根据一个实施例，半导体发光器件包括发光元件，荧光体层和荧光反射膜。荧光体层具有透明介质，分散在透明介质中的荧光体和分散在透明介质中的粒子。荧光体被激发光激发，从而发出荧光。粒子的大小不大于激发光的波长的1/10。该颗粒具有与透明介质的折射率不同的折射率。荧光反射膜设置在发光元件和荧光体层之间。荧光反射膜相对于荧光体的荧光波长具有比相对于激发光的波长的反射率更高的反射率。

7. 发明申请

US20130313581A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE 失效
标题翻译：半导体发光器件和发光模块
公开(公告)号：US20130313581A1
公开(公告)日：2013-11-28
申请号：US13601336
申请日：2012-08-31
申请人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L33/50 , H01L33/08
CPC分类号： H01L33/505
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

8. 发明授权

US08957402B2 Semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08957402B2
公开(公告)日：2015-02-17
申请号：US13597096
申请日：2012-08-28
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
IPC分类号： H01L29/06
CPC分类号： H01L33/12 , H01L33/0025 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/54
摘要： According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一氮化物半导体层，氮化物半导体发光层，第二氮化物半导体层，p侧电极和n侧电极。氮化物半导体发光层设置在第一氮化物半导体层的第二面的p侧区域上。第二氮化物半导体层设置在氮化物半导体发光层上。 p侧电极设置在第二氮化物半导体层上。 n侧电极设置在第一氮化物半导体层的第二面的n侧区域上。氮化物半导体发光层在第一氮化物半导体层的一侧具有第一凹凸面，在第二氮化物半导体层的侧面具有第二凹凸面。

9. 发明申请

US20130285011A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
公开(公告)号：US20130285011A1
公开(公告)日：2013-10-31
申请号：US13597096
申请日：2012-08-28
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/12 , H01L33/0025 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/54
摘要： According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.

10. 发明申请

US20130248904A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130248904A1
公开(公告)日：2013-09-26
申请号：US13601487
申请日：2012-08-31
申请人： Yoshiaki SUGIZAKI , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
发明人： Yoshiaki SUGIZAKI , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
IPC分类号： H01L33/50
CPC分类号： H01L33/647 , H01L25/0753 , H01L33/0095 , H01L33/20 , H01L33/385 , H01L33/502 , H01L33/505 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一面，第二面，侧面和发光层的半导体层; 设置在所述第二面上的p侧电极; 设置在所述侧面上的n侧电极; 设置在p侧电极上的第一p侧金属层; 设置在n侧电极的周围的第一n侧金属层; 设置在第一n侧金属层的第二面侧的面上的第一绝缘层; 第二p侧金属层，与第一p侧金属层上的第一p侧金属层连接，并且从第一p侧金属层延伸到第一绝缘层; 以及设置在半导体层的周边区域中的第一n侧金属层的第二面侧的面上的第二n侧金属层。

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