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1. 发明申请

US20090036687A1 MULTINUCLEAR COMPLEX AND CONDENSATION PRODUCT THEREOF 审中-公开
标题翻译：多功能复合物和凝结产品
公开(公告)号：US20090036687A1
公开(公告)日：2009-02-05
申请号：US12278415
申请日：2007-02-08
申请人： Yoshiyuki Sugahara , Takeshi Ishiyama , Hideyuki Higashimura
发明人： Yoshiyuki Sugahara , Takeshi Ishiyama , Hideyuki Higashimura
IPC分类号： C07D403/14 , C07F7/10
CPC分类号： C07F15/025 , B01J31/183 , B01J31/2243 , B01J2231/62 , B01J2531/0216 , B01J2531/0258 , B01J2531/16 , B01J2531/72 , B01J2531/842 , B01J2531/845 , B01J2531/847 , C07F7/1804
摘要： A multinuclear complex comprising a plurality of metal atoms and a ligand L coordinating to the metal atoms, and satisfying the following conditions (i), (ii), (iii) and (iv):(i) The ligand L has a monovalent group represented by the following general formula (1) and/or a divalent group represented by the following general formula (2), (ii) The ligand L has at least 5 coordination atoms bonding to the metal atom, (iii) At least one of the coordination atoms bonds to two of the metal atoms, or the minimum number of covalent bonds between any two selected coordination atoms is 1-5, and (iv) The ligand L is soluble in the solvent.
摘要翻译：包含多个金属原子的多核络合物和与金属原子配位的配位体L，并满足下列条件（i），（ii），（iii）和（iv）：（i）配体L具有一价基团由下述通式（1）表示的化合物和/或由以下通式（2）表示的二价基团，（ii）配体L具有至少5个与金属原子键合的配位原子，（iii）至少一个配位原子与两个金属原子键合，或任意两个选定的配位原子之间的最小共价键数为1-5，和（ⅳ）配体L可溶于溶剂中。

2. 发明授权

US07554886B2 Disk access device 有权
标题翻译：磁盘访问设备
公开(公告)号：US07554886B2
公开(公告)日：2009-06-30
申请号：US11707270
申请日：2007-02-16
申请人： Kiyoshi Masaki , Kazuhiko Miyazaki , Yoshiyuki Sugahara
发明人： Kiyoshi Masaki , Kazuhiko Miyazaki , Yoshiyuki Sugahara
IPC分类号： G11B17/22
CPC分类号： G11B7/08505 , G11B7/0079
摘要： A disk access device records to and plays back from a disk on which data recording is performed according to the ZCLV format, and includes a head that reads/writes data from/to the disk. The disk access device calculates a deferment time period that begins upon completion of data reading/writing in the user area of a currently accessed zone and ends when the head enters a predetermined area of the guard track zone following the user area, and a setting time period for performing settings for data reading/writing in the zone to be accessed next. If the deferment time period is shorter than the setting time period, the disk access device moves the head back, when data reading or writing in the currently accessed zone ends, to a position such that the setting time period ends before the head advancing from the position arrives at the predetermined area.
摘要翻译：磁盘访问设备根据ZCLV格式从执行数据记录的磁盘记录到并重放，并且包括从/向磁盘读取/写入数据的磁头。磁盘访问装置计算在当前访问区域的用户区域中完成数据读取/写入之后开始的延迟时间段，并且当头部进入跟随用户区域的保护轨道区域的预定区域结束时，用于执行下一个要访问的区域中的数据读取/写入设置的周期。如果延迟时间段比设定时间段短，则在当前访问区域的数据读取或写入结束时，磁盘存取装置将头部移回到使头部从头部前进开始的结束位置位置到达预定区域。

3. 发明申请

US20070184617A1 Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20070184617A1
公开(公告)日：2007-08-09
申请号：US10599747
申请日：2005-03-04
申请人： Masaaki Ogino , Yoshiyuki Sugahara
发明人： Masaaki Ogino , Yoshiyuki Sugahara
IPC分类号： H01L21/336 , H01L21/76 , H01L21/31
CPC分类号： H01L29/513 , H01L21/28194 , H01L21/28211 , H01L29/66181 , H01L29/66704
摘要： There is provided a semiconductor device having a high breakdown voltage and a high reliability in which a gate insulating film having a film thickness of good uniformity is formed inside a trench. An HTO is formed on an inner wall of a trench in an Si substrate by a reduced pressure CVD method and, thereafter, a thermally oxidized film is formed on an interface between the HTO and the Si substrate by performing a thermal oxidation treatment (Samples A and C). By performing these procedures as described above, the gate insulating film in which local thinning of the film is suppressed, film thickness is of good uniformity and an interface state density is low can be formed inside the trench. A semiconductor device, which has a trench gate structure, of a high quality and a high reliability having no reduction in the breakdown voltage in which a lifetime comes to be substantially longer compared with that (Sample B) in which the gate insulating film is formed only with a thermally oxidized film can be realized.
摘要翻译：提供了具有高击穿电压和高可靠性的半导体器件，其中在沟槽内形成具有良好均匀性的膜厚度的栅极绝缘膜。通过减压CVD法在Si衬底中的沟槽的内壁上形成HTO，然后通过进行热氧化处理（样品A（A））在HTO和Si衬底之间的界面上形成热氧化膜和C）。通过进行如上所述的工序，能够在沟槽内部形成抑制膜的局部变薄，膜厚均匀性高，界面态密度低的栅极绝缘膜。与形成栅极绝缘膜的（样品B）相比，具有沟槽栅极结构的半导体器件具有高质量和高可靠性，其寿命没有降低，其中寿命变得更长，只能使用热氧化膜。

4. 发明授权

US5607875A Method of separating a semiconductor wafer with dielectrics 失效
标题翻译：用电介质分离半导体晶片的方法
公开(公告)号：US5607875A
公开(公告)日：1997-03-04
申请号：US454918
申请日：1995-05-31
申请人： Masato Nishizawa , Shinichi Hashimoto , Yoshiyuki Sugahara
发明人： Masato Nishizawa , Shinichi Hashimoto , Yoshiyuki Sugahara
IPC分类号： H01L21/02 , H01L21/76 , H01L21/762 , H01L21/763 , H01L27/12
CPC分类号： H01L21/763 , H01L21/76264 , H01L21/76275 , H01L21/76286 , Y10S148/05
摘要： A method for separating a joined substrate type wafer, which wafer is composed of a pair of semiconductor substrates joined through an insulation film, utilizes dielectrics through simple processing steps. Trenches for separating a semiconductor substrate with dielectrics are dug from the surface of the substrate and a dielectrics film is deposited on the surface of the substrate including the trenches. Then poly-crystalline silicon is grown by CVD to a thickness of about 0.5 .mu.m, which is deep enough to fill the trenches. The process time for growing poly-crystalline silicon is shortened, and the processing step for removing the poly-crystalline silicon deposited on the unwanted areas is eliminated by growing the poly-crystalline silicon in the trenches but not on the crystalline surface of semiconductor regions based on the growth rate dependence of the poly-crystalline silicon on the crystallinity of the surface on which the poly-crystalline silicon is grown.
摘要翻译：用于分离由通过绝缘膜连接的一对半导体基板构成的晶片的接合基板型晶片的方法通过简单的处理步骤来利用电介质。用于从电介质表面分离半导体衬底的沟槽从衬底的表面被挖出，并且在包括沟槽的衬底的表面上沉积电介质膜。然后通过CVD将多晶硅生长至约0.5μm的厚度，其足够深以填充沟槽。缩短生长多晶硅的处理时间，并且通过在沟槽中生长多晶硅而不是在半导体区域的晶体表面上生长多晶硅以消除沉积在不想要的区域上的多晶硅的处理步骤关于多晶硅对生长多晶硅的表面的结晶度的生长速率依赖性。

5. 发明申请

US20100110536A1 OPTICAL AMPLIFIER AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：光放大器及其生产方法
公开(公告)号：US20100110536A1
公开(公告)日：2010-05-06
申请号：US12525813
申请日：2008-02-05
申请人： Keiichi Nashimoto , Yoshiyuki Sugahara
发明人： Keiichi Nashimoto , Yoshiyuki Sugahara
IPC分类号： H01S3/00 , G02B6/10 , H01L33/00
CPC分类号： H01S3/0632 , H01S3/1608 , H01S3/1618 , H01S3/163 , H01S3/1675
摘要： A small-sized, highly efficient optical amplifier having a PLZT optical waveguide layer to which a rare earth element is added, and a method for manufacturing the same are provided. Disclosed is an optical amplifier including an optical waveguide layer, the optical waveguide layer including Pb1-xLax(ZryTi1-y)1-x/4 O3 (PLZT: 0
摘要翻译：提供了具有添加有稀土元素的PLZT光波导层的小型高效光放大器及其制造方法。公开了一种光放大器，包括光波导层，包括Pb1-xLax（ZryTi1-y）1-x / 4O3（PLZT：0

6. 发明授权

US07526176B2 Optical amplifier and fabrication method thereof 失效
标题翻译：光放大器及其制造方法
公开(公告)号：US07526176B2
公开(公告)日：2009-04-28
申请号：US11726711
申请日：2007-03-22
申请人： Keiichi Nashimoto , Yoshiyuki Sugahara
发明人： Keiichi Nashimoto , Yoshiyuki Sugahara
IPC分类号： G02B6/00
CPC分类号： H01S3/063 , H01S3/1608 , H01S3/1685
摘要： An optical amplifier including an optical waveguide layer (for example channel-shaped optical waveguide layer) including Pb1−xLax(ZryTi1−y)1−x/4O3(PLZT: 0
摘要翻译：包括掺杂有Pb1-xLax（ZryTi1-y）1-x / 4O3（PLZT：0

7. 发明申请

US20070201318A1 Disk access device 有权
标题翻译：磁盘访问设备
公开(公告)号：US20070201318A1
公开(公告)日：2007-08-30
申请号：US11707270
申请日：2007-02-16
申请人： Kiyoshi Masaki , Kazuhiko Miyazaki , Yoshiyuki Sugahara
发明人： Kiyoshi Masaki , Kazuhiko Miyazaki , Yoshiyuki Sugahara
IPC分类号： G11B7/085
CPC分类号： G11B7/08505 , G11B7/0079
摘要： A disk access device records to and plays back from a disk on which data recording is performed according to the ZCLV format, and includes a head that reads/writes data from/to the disk. The disk access device calculates a deferment time period that begins upon completion of data reading/writing in the user area of a currently accessed zone and ends when the head enters a predetermined area of the guard track zone following the user area, and a setting time period for performing settings for data reading/writing in the zone to be accessed next. If the deferment time period is shorter than the setting time period, the disk access device moves the head back, when data reading or writing in the currently accessed zone ends, to a position such that the setting time period ends before the head advancing from the position arrives at the predetermined area.
摘要翻译：磁盘访问设备根据ZCLV格式从执行数据记录的磁盘记录到并重放，并且包括从/向磁盘读取/写入数据的磁头。磁盘访问装置计算在当前访问区域的用户区域中完成数据读取/写入之后开始的延迟时间段，并且当头部进入跟随用户区域的保护轨道区域的预定区域结束时，用于执行下一个要访问的区域中的数据读取/写入设置的周期。如果延迟时间比设定时间短，则在当前访问区域的数据读取或写入结束时，磁盘访问装置将磁头返回到使头部从头部前进开始的结束位置位置到达预定区域。

8. 外观设计

USD407409S Rodless cylinder 失效
公开(公告)号：USD407409S
公开(公告)日：1999-03-30
申请号：US48609
申请日：1996-01-05
申请人： Mitsuo Masuda , Yoshiyuki Sugahara
设计人： Mitsuo Masuda , Yoshiyuki Sugahara

9. 发明申请

US20070237483A1 Optical amplifier and fabrication method thereof 失效
标题翻译：光放大器及其制造方法
公开(公告)号：US20070237483A1
公开(公告)日：2007-10-11
申请号：US11726711
申请日：2007-03-22
申请人： Keiichi Nashimoto , Yoshiyuki Sugahara
发明人： Keiichi Nashimoto , Yoshiyuki Sugahara
IPC分类号： G02B6/10
CPC分类号： H01S3/063 , H01S3/1608 , H01S3/1685
摘要： An optical amplifier including an optical waveguide layer (for example channel-shaped optical waveguide layer) including Pb1-xLax(ZryTi1-y)1-x/4 O3 (PLZT: 0
摘要翻译：一种光放大器，包括包括Pb 1-x La x Ti（Zr y y Ti）的光波导层（例如沟道形光波导层） 1-x / 4 O 3（PLZT：0 0.2mol％〜11.0mol％的稀土元素，通过固相外延生长形成为单晶膜的光波导层（例如通道形光波导层）。

10. 发明申请

US20070104042A1 Media drive, computer system, and media drive control method 审中-公开
标题翻译：媒体驱动器，计算机系统和媒体驱动器控制方法
公开(公告)号：US20070104042A1
公开(公告)日：2007-05-10
申请号：US10587083
申请日：2005-01-19
申请人： Yoshiyuki Sugahara , Keiichi Osaka , Taisuke Miyoshi
发明人： Yoshiyuki Sugahara , Keiichi Osaka , Taisuke Miyoshi
IPC分类号： G11B17/22
CPC分类号： G11B19/20 , G06F1/3221 , G06F1/325 , G11B19/10 , Y02D10/154 , Y02D50/20
摘要： A media drive, a computer system, and a media drive control method, in which insertion/ejection of a removable medium into/from a media drive being in a sleep mode that is a power saving mode of operation can be detected, and the power consumptions of the media drive and host computer can be still more saved. When a CD-ROM drive (2) being in the sleep mode detects a change of status of a CD-ROM, such as insertion or ejection thereof, it notifies a personal computer (1) of the CD-ROM status change by using a hardware interrupt signal without polling. Thus, the status of CD-ROM insertion/ejection into/from the CD-ROM drive (2) can be grasped from the personal computer (1) to place the CD-ROM drive (2) in the sleep mode when the CD-ROM needs not be driven or in a normal mode of operation when it needs to be driven.
摘要翻译：可以检测介质驱动器，计算机系统和介质驱动器控制方法，其中可移除介质插入/从介质驱动器处于处于休眠模式的作为省电操作模式的媒体驱动器，并且功率媒体驱动器和主机的消耗可以更加节省。当处于睡眠模式的CD-ROM驱动器（2）检测到CD-ROM的状态改变（例如插入或弹出）时，它通过使用一个或多个CD-ROM通知个人计算机（1）CD-ROM状态改变硬件中断信号无轮询。因此，当CD-ROM驱动器（2）进入/从CD-ROM驱动器（2）进入/从CD-ROM驱动器（2）的状态被CD-ROM驱动器（2）置于睡眠模式时，当需要驱动时，ROM不需要被驱动或处于正常的操作模式。

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