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1. 发明授权

US07094276B2 Hydrogen storage material and hydrogen storage apparatus 失效
标题翻译：储氢材料及储氢装置
公开(公告)号：US07094276B2
公开(公告)日：2006-08-22
申请号：US10255955
申请日：2002-09-27
申请人： Yoshitsugu Kojima , Yasuaki Kawai
发明人： Yoshitsugu Kojima , Yasuaki Kawai
IPC分类号： C01B3/00 , B01J20/20 , F17C11/00
CPC分类号： B82Y30/00 , B01J20/02 , B01J20/20 , B01J20/2803 , B01J20/28057 , B01J20/2808 , B01J2220/42 , C01B3/0021 , Y02E60/325 , Y10S420/90 , Y10S502/526
摘要： The present invention involves a carbon-based hydrogen storage material which includes a carbon material, exhibiting a specific surface area, being 1,000 m2/g or more, and a bulk density, being from 0.4 g/cm3 or more to 1 g/cm3 or less. The carbon-based hydrogen storage material is such that the hydrogen storage capacity per unit volume is large. The invention also provides for a hydrogen storage apparatus whose hydrogen storage capacity per unit volume is large. The hydrogen storage apparatus is constituted so as to include a container and a hydrogen absorbing material accommodated in the container, and the hydrogen absorbing material is arranged to include a porous carbon material whose specific surface area is 1,000 m2/g or more, and a hydrogen absorbing alloy.
摘要翻译：本发明涉及碳基储氢材料，其包含比表面积为1000m 2 / g以上的碳材料，堆积密度为0.4g / cm 3 3以上至1g / cm 3以下。碳基储氢材料使得每单位体积的储氢容量大。本发明还提供了每单位体积的氢存储容量大的氢存储装置。氢存储装置构成为包括容纳在容器中的容器和吸氢材料，吸氢材料配置成包含比表面积为1000μm2以上的多孔碳材料， g以上，以及吸氢合金。

2. 发明授权

US06750123B2 Method of manufacturing CMOS device with implantation shielding layer 失效
标题翻译：制造具有植入屏蔽层的CMOS器件的方法
公开(公告)号：US06750123B2
公开(公告)日：2004-06-15
申请号：US09847288
申请日：2001-05-03
申请人： Yasuaki Kawai
发明人： Yasuaki Kawai
IPC分类号： H01L21425
CPC分类号： H01L29/66772 , H01L29/78618
摘要： A shielding layer 23 is selectively formed on a single crystal silicon layer, an active area 25 is formed in the single crystal silicon layer by using the shielding layer 23 as a mask and an impurity layer 26 is formed at the edges at the sides of the active area 25 by using the shielding layer 23 as a mask and implanting an impurity diagonally from above. As a result, since an impurity layer can be formed by implanting ions of the impurity at the edges at the sides of the active area even when the size of the active area is reduced to the absolute limit, the occurrence of the parasitic transistor phenomenon or the edge transistor phenomenon along the edges at the sides of the active area can be prevented.
摘要翻译：在单晶硅层上选择性地形成屏蔽层23，通过使用屏蔽层23作为掩模在单晶硅层中形成有源区25，并且在该层的边的边缘处形成杂质层26 通过使用屏蔽层23作为掩模并且从上方对角地注入杂质来生成有源区25。结果，由于可以通过在有源区的侧面的边缘处注入杂质的离子来形成杂质层，即使当有源区的尺寸减小到绝对极限时，发生寄生晶体管现象或可以防止沿着有效区域的边缘的边缘的边缘晶体管现象。

3. 发明授权

US09754709B2 Nanoheterostructured permanent magnet and method for producing the same 有权
公开(公告)号：US09754709B2
公开(公告)日：2017-09-05
申请号：US14345069
申请日：2012-09-14
申请人： Hiroaki Wakayama , Hirotaka Yonekura , Yasuaki Kawai
发明人： Hiroaki Wakayama , Hirotaka Yonekura , Yasuaki Kawai
IPC分类号： H01F1/03 , H01F1/057 , H01F41/02 , H01F1/06 , H01F1/055 , H01F1/08
CPC分类号： H01F1/0306 , H01F1/0558 , H01F1/0579 , H01F1/068 , H01F1/083 , H01F41/0266 , Y10T428/12 , Y10T428/24802 , Y10T428/24942
摘要： A nanoheterostructured permanent magnet includes a hard magnetic material and a soft magnetic material of which one inorganic component is a matrix, and of which the other inorganic component is three-dimensionally and periodically arranged in the matrix, in a shape selected from the group consisting of a spherical shape, a columnar shape, and a gyroid shape, the nanoheterostructured permanent magnet having a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.

4. 发明授权

US08294231B2 Optical sensing device including visible and UV sensors 有权
标题翻译：光学感测装置包括可见光和紫外线传感器
公开(公告)号：US08294231B2
公开(公告)日：2012-10-23
申请号：US12407805
申请日：2009-03-20
申请人： Yasuaki Kawai
发明人： Yasuaki Kawai
IPC分类号： H01L31/00
CPC分类号： H01L31/03529 , G01J1/4228 , G01J1/429 , H01L27/14609 , H01L27/14647 , H01L31/028 , H01L31/103 , Y02E10/547
摘要： An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.
摘要翻译：光学传感器件包括绝缘体上硅（SOI）衬底，半导体支撑衬底，位于半导体支撑衬底上的绝缘层和位于绝缘层上的半导体层。光学传感装置还包括位于半导体支撑衬底中的可见光传感器和位于半导体层中的紫外线传感器。

5. 发明授权

US09130214B2 Electrode material for lithium secondary battery, method for producing the same, and lithium secondary battery including the same 有权
标题翻译：锂二次电池用电极材料及其制造方法以及包含该锂二次电池的锂二次电池
公开(公告)号：US09130214B2
公开(公告)日：2015-09-08
申请号：US13618626
申请日：2012-09-14
申请人： Hiroaki Wakayama , Hirotaka Yonekura , Yasuaki Kawai
发明人： Hiroaki Wakayama , Hirotaka Yonekura , Yasuaki Kawai
IPC分类号： H01M4/133 , H01M4/1397 , H01M4/13 , H01M4/139 , H01M4/62 , H01M4/485 , H01M4/525 , H01M4/58
CPC分类号： H01M4/1397 , H01M4/13 , H01M4/133 , H01M4/139 , H01M4/485 , H01M4/525 , H01M4/5825 , H01M4/62 , Y02E60/122
摘要： An electrode material for lithium secondary battery comprises a nanoheterostructure which contains a lithium-ion conductor and an electrode active substance of which one inorganic component is a matrix, and of which the other inorganic component is three-dimensionally and periodically arranged in the matrix, and has a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.
摘要翻译：用于锂二次电池的电极材料包括含有锂离子导体和一种无机组分为基质的电极活性物质，并且其它无机组分三维和周期性地排列在基质中的纳米结构，具有重复结构的一个单位长度的平均值为1nm至100nm的三维周期性结构。

6. 发明申请

US20090243019A1 OPTICAL SENSING DEVICE INCLUDING VISIBLE AND UV SENSORS 有权
标题翻译：包括可见和紫外线传感器的光学感应装置
公开(公告)号：US20090243019A1
公开(公告)日：2009-10-01
申请号：US12407805
申请日：2009-03-20
申请人： Yasuaki Kawai
发明人： Yasuaki Kawai
IPC分类号： H01L31/02 , H01L31/0352
CPC分类号： H01L31/03529 , G01J1/4228 , G01J1/429 , H01L27/14609 , H01L27/14647 , H01L31/028 , H01L31/103 , Y02E10/547
摘要： An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.
摘要翻译：光学传感器件包括绝缘体上硅（SOI）衬底，半导体支撑衬底，位于半导体支撑衬底上的绝缘层和位于绝缘层上的半导体层。光学传感装置还包括位于半导体支撑衬底中的可见光传感器和位于半导体层中的紫外线传感器。

7. 发明授权

US06554053B2 Method of minimizing the size of primary silicon in Al-Si alloy 失效
标题翻译：使Al-Si合金中一次硅的尺寸最小化的方法
公开(公告)号：US06554053B2
公开(公告)日：2003-04-29
申请号：US10090676
申请日：2002-03-05
申请人： Kazuhiko Takata , Yasuaki Kawai , Mayuki Morinaka
发明人： Kazuhiko Takata , Yasuaki Kawai , Mayuki Morinaka
IPC分类号： B22D2700
CPC分类号： C22C1/026 , C22C1/03 , C22C21/04
摘要： A method of minimizing the size of primary Si in Al—Si alloy which includes a step of adding P to molten Al—Si alloy, a step of contacting a metal substrate plated with Zn or a copper substrate, and a step of removing the substrate from the molten Al—Si alloy.
摘要翻译：一种使Al-Si合金中的初级Si的尺寸最小化的方法，其包括将P添加到熔融的Al-Si合金中的步骤，使镀有Zn或铜基底的金属基板接触的步骤和除去基板的步骤从熔融的Al-Si合金。

8. 发明申请

US20140370321A1 NANOHETEROSTRUCTURED PERMANENT MAGNET AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：纳米结构永久磁铁及其制造方法
公开(公告)号：US20140370321A1
公开(公告)日：2014-12-18
申请号：US14345069
申请日：2012-09-14
申请人： Hiroaki Wakayama , Hirotaka Yonekura , Yasuaki Kawai
发明人： Hiroaki Wakayama , Hirotaka Yonekura , Yasuaki Kawai
IPC分类号： H01F1/03 , H01F41/02
CPC分类号： H01F1/0306 , H01F1/0558 , H01F1/0579 , H01F1/068 , H01F1/083 , H01F41/0266 , Y10T428/12 , Y10T428/24802 , Y10T428/24942
摘要： A nanoheterostructured permanent magnet includes a hard magnetic material and a soft magnetic material of which one inorganic component is a matrix, and of which the other inorganic component is three-dimensionally and periodically arranged in the matrix, in a shape selected from the group consisting of a spherical shape, a columnar shape, and a gyroid shape, the nanoheterostructured permanent magnet having a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.
摘要翻译：纳米结构永磁体包括硬磁性材料和一种无机组分为基质的软磁性材料，其中另一种无机组分以三维和周期性排列在基质中，其形状选自球形，圆柱形和旋转形状，具有三维周期性结构的纳米结构永磁体，其重复结构的平均值为一个单位长度为1nm至100nm。

9. 发明申请

US20100050519A1 Energy gas producing process and energy gas storage material 审中-公开
标题翻译：能源气生产过程和能源储气材料
公开(公告)号：US20100050519A1
公开(公告)日：2010-03-04
申请号：US12461729
申请日：2009-08-21
申请人： Yasuaki Kawai , Mitsuru Matsumoto , Shinichi Towata , Yoshiaki Fukushima , Qiwu Zhang , Fumio Saito
发明人： Yasuaki Kawai , Mitsuru Matsumoto , Shinichi Towata , Yoshiaki Fukushima , Qiwu Zhang , Fumio Saito
IPC分类号： C01B3/02
CPC分类号： C01B3/02 , C01B3/32 , C10L3/08 , F17C11/00 , Y02E50/30 , Y02E60/321
摘要： There is provided a process for producing an energy gas at a lower temperature and in a larger amount, as well as an energy gas storage material capable of easily taking out the energy gas. A process for producing an energy gas including a MG processing step of co-grinding a mixture of a carbon-, hydrogen-, and oxygen-containing compound, an alkali metal or compound thereof, and an alkaline earth metal or a compound thereof, thereby obtaining a MG processing product and a heating step of heating the MG processing product in an inert atmosphere, as well as an energy storage material obtained by the MG processing described above. The MG processing step preferably including adding a transition metal or a compound thereof to the mixture and co-grinding the mixture.
摘要翻译：提供了一种在较低温度和较大量下生产能量气体的方法，以及能够容易地取出能量气体的能量气体储存材料。一种能量气体的制造方法，其特征在于，包括：通过共混研磨含有碳，氢和氧的化合物，碱金属或其化合物，碱土金属或其化合物的混合物的MG处理工序，由此获得MG处理产品和在惰性气氛中加热MG处理产品的加热步骤，以及通过上述MG处理获得的储能材料。 MG加工步骤优选包括向混合物中加入过渡金属或其化合物并共混研磨该混合物。

10. 发明申请

US20090179241A1 Photosensor and photo IC equipped with same 审中-公开
标题翻译：光电传感器和照相IC配备相同
公开(公告)号：US20090179241A1
公开(公告)日：2009-07-16
申请号：US12318895
申请日：2009-01-12
申请人： Yasuaki Kawai
发明人： Yasuaki Kawai
IPC分类号： H01L31/08 , H01L31/09
CPC分类号： H01L31/103 , G01J1/02 , G01J1/0209 , G01J1/4228 , G01J1/429 , H01L27/1203 , H01L31/02019 , H01L31/028 , H01L31/03529 , Y02E10/547
摘要： The present invention provides a photosensor formed in a semiconductor substrate having a silicon substrate, an insulating layer formed over the silicon substrate, and a silicon semiconductor layer formed over the insulating layer, comprising an ultraviolet photosensitive element formed in the silicon semiconductor layer, and at least one visible light photosensitive element formed in the silicon substrate.
摘要翻译：本发明提供了一种形成在具有硅衬底，形成在硅衬底上的绝缘层和形成在绝缘层之上的硅半导体层的半导体衬底中的光电传感器，包括形成在硅半导体层中的紫外光敏元件，形成在硅衬底中的至少一个可见光感光元件。

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