专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06844263B2 LSI device polishing composition and method for producing LSI device 失效
标题翻译： LSI器件抛光组合物和LSI器件的制造方法
公开(公告)号：US06844263B2
公开(公告)日：2005-01-18
申请号：US10370603
申请日：2003-02-24
申请人： Yoshitomo Shimazu , Takanori Kido , Nobuo Uotani
发明人： Yoshitomo Shimazu , Takanori Kido , Nobuo Uotani
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/302 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
摘要翻译：本发明提供一种含有水，磨粒，有机酸，氧化剂，pH值为5.5〜10.0的碱性物质的LSI装置研磨用组合物，所述LSI装置用研磨用组合物用于研磨铜 - 其中通过由Ta或TaN形成的阻挡金属将铜沉积在绝缘膜上的含金属布线层; 以及通过使用该研磨用组合物来制造LSI器件的方法。在对Ta，TaN等阻挡金属和铜布线层进行研磨的过程中，可以提高Ta，TaN的研磨速度，从而防止凹陷和侵蚀。

2. 发明授权

US06547843B2 LSI device polishing composition and method for producing LSI device 有权
公开(公告)号：US06547843B2
公开(公告)日：2003-04-15
申请号：US09775611
申请日：2001-07-02
申请人： Yoshitomo Shimazu , Takanori Kido , Nobuo Uotani
发明人： Yoshitomo Shimazu , Takanori Kido , Nobuo Uotani
IPC分类号： C09G102
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.

3. 发明授权

US07901474B2 Polishing composition and polishing method 有权
标题翻译：抛光组合物和抛光方法
公开(公告)号：US07901474B2
公开(公告)日：2011-03-08
申请号：US11793347
申请日：2005-12-22
申请人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
发明人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： The present invention provide a chemical-mechanical polishing composition for inhibiting dishing and erosion as well as rapidly polishing an insulating film and barrier film at the same time while maintaining the flatness of the substrate surface polished. The present chemical-mechanical polishing composition comprises methanesulfonic acid, an alkali metal ion, an oxidizing agent, a silica abrasive and water, and has a pH of 8 to 12.
摘要翻译：本发明提供了一种用于抑制凹陷和侵蚀的化学机械抛光组合物，同时在保持衬底表面的平整度的同时同时快速抛光绝缘膜和阻挡膜。本发明的化学机械抛光组合物包含甲磺酸，碱金属离子，氧化剂，二氧化硅磨料和水，并且具有8至12的pH。

4. 发明申请

US20080138990A1 Polishing Composition and Polishing Method 有权
标题翻译：抛光组合和抛光方法
公开(公告)号：US20080138990A1
公开(公告)日：2008-06-12
申请号：US11793347
申请日：2005-12-22
申请人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
发明人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
IPC分类号： H01L21/306 , C09K13/00 , C09K13/06
CPC分类号： C09G1/02 , H01L21/3212
摘要： The present invention provide a chemical-mechanical polishing composition for inhibiting dishing and erosion as well as rapidly polishing an insulating film and barrier film at the same time while maintaining the flatness of the substrate surface polished. The present chemical-mechanical polishing composition comprises methanesulfonic acid, an alkali metal ion, an oxidizing agent, a silica abrasive and water, and has a pH of 8 to 12.
摘要翻译：本发明提供了一种用于抑制凹陷和侵蚀的化学机械抛光组合物，同时在保持衬底表面的平整度的同时同时快速抛光绝缘膜和阻挡膜。本发明的化学机械抛光组合物包含甲磺酸，碱金属离子，氧化剂，二氧化硅磨料和水，并且具有8至12的pH。

5. 发明授权

US08425276B2 Polishing composition 有权
标题翻译：抛光组成
公开(公告)号：US08425276B2
公开(公告)日：2013-04-23
申请号：US12741177
申请日：2008-11-12
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
IPC分类号： B24B1/00
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.)
摘要翻译：本发明提供一种用于抛光铜或铜合金的抛光组合物，包括：氧化剂（A）; 至少一种选自氨基酸的酸（B），8个或更少碳原子的羧酸或无机酸; 具有8个或更多个碳原子的烷基的磺酸（C）; 具有8个以上碳原子的烷基的脂肪酸（D）和由以下通式（1）表示的N-取代咪唑（E）。（式（1）中，Ra，Rb，Rc表示H或碳原子数1〜4的烷基，Rd表示选自苄基，乙烯基，乙烯基， 1〜4个碳原子的基团，以及这些基团的一部分H被OH或NH 2取代的基团。

6. 发明申请

US20090289217A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20090289217A1
公开(公告)日：2009-11-26
申请号：US12375325
申请日：2007-07-26
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
IPC分类号： C09G1/00 , C09G1/02
CPC分类号： C09K3/1463 , C09G1/02 , C23F3/06 , C23F11/149 , H01L21/3212
摘要： A polishing composition which achieves surfaces with high planarity and the reduction of corrosions in the wiring metal surface at the same time is provided.Such compositions include (A) an oxidizing agent; (B) at least one acid selected from an amino acid, a carboxylic acid of no more than 8 carbon atoms, and an inorganic acid; (C) a sulfonic acid having a concentration of 0.01% by mass or more and having an alkyl group of 8 or more carbon atoms; (D) a fatty acid having a concentration of 0.001% by mass or more and having an alkyl group of 8 or more carbon atoms; and (E) at least one compound selected from a pyridine carbonyl compound, a nonionic water-soluble polymer, 2-pyrrolidone, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, gramine, adenine, N,N′-diisopropylethylenediamine, N,N′-bis(2-hydroxyethyl)ethylenediamine, N,N′-dibenzylethylenediamine, and N,N′-diphenylethylenediamine.
摘要翻译：提供了一种能够同时实现高平坦度的表面和布线金属表面的腐蚀降低的抛光组合物。这样的组合物包括（A）氧化剂; （B）选自氨基酸，不超过8个碳原子的羧酸和无机酸中的至少一种酸; （C）浓度为0.01质量％以上且具有8个以上碳原子的烷基的磺酸; （D）浓度为0.001质量％以上且具有8个以上碳原子的烷基的脂肪酸; 和（E）选自吡啶羰基化合物，非离子水溶性聚合物，2-吡咯烷酮，N-甲基吡咯烷酮，1,3-二甲基-2-咪唑烷酮，格列胺，腺嘌呤，N，N'-二异丙基乙二胺中的至少一种化合物，N，N'-双（2-羟乙基）乙二胺，N，N'-二苄基乙二胺和N，N'-二苯基乙二胺。

7. 发明申请

US20090194504A1 METHOD FOR PRODUCING ABRASIVE COMPOSITION 审中-公开
标题翻译：生产磨料组合物的方法
公开(公告)号：US20090194504A1
公开(公告)日：2009-08-06
申请号：US12300762
申请日：2007-05-14
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
IPC分类号： C09K13/00 , B44C1/22 , C09K13/04 , C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1454 , C23F3/04 , H01L21/7684
摘要： The present invention provides a method for producing an abrasive composition, which can control dishing, a method for polishing a substrate using the abrasive composition, and a method for producing a substrate. In the method for producing an abrasive composition, two kinds of preliminary compositions (A) and (B) having different compositions are mixed in different mixing ratios to produce plural kinds of abrasive compositions, wherein a composition containing (a) an abrasive grain, (b) an oxidizing agent, (c) one or more acids selected from the group consisting of amino acids, organic acids and inorganic acids, and (d) a surfactant is used as the preliminary composition (A); and a composition containing (a) an abrasive grain and (b) an oxidizing agent is used as the preliminary composition (B). The preliminary composition (B) may contain the foregoing acid (c) and surfactant (d). In this case, at least one of (a), (b), (c) and (d) in the preliminary composition (A) has a different concentration from that in the preliminary composition (B).
摘要翻译：本发明提供一种可以控制凹陷的研磨组合物的制造方法，使用该研磨剂组合物的基板的研磨方法及其制造方法。在制造研磨剂组合物的方法中，以不同的混合比例混合两种具有不同组成的预备组合物（A）和（B），以制备多种磨料组合物，其中含有（a）磨粒，（ b）氧化剂，（c）一种或多种选自氨基酸，有机酸和无机酸的酸，和（d）表面活性剂用作初步组合物（A）; 并且使用含有（a）磨粒的组合物和（b）氧化剂作为初步组合物（B）。初步组合物（B）可以含有上述酸（c）和表面活性剂（d）。在这种情况下，初步组合物（A）中的（a），（b），（c）和（d）中的至少一种与初步组合物（B）的浓度不同。

8. 发明授权

US08592314B2 Polishing composition and polishing method 有权
标题翻译：抛光组合物和抛光方法
公开(公告)号：US08592314B2
公开(公告)日：2013-11-26
申请号：US11794201
申请日：2006-01-24
申请人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
发明人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
IPC分类号： C09G1/02 , H01L21/3105
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： The present invention aims to provide a polishing composition which allows high-speed polishing of a barrier film and an inter-layer dielectric film along with a wiring metal at the same time, while preventing dishing and erosion, and particularly maintaining the flatness of metal film. The chemical-mechanical polishing composition of the present invention comprises a dicarboxylic acid having 7 to 13 carbon atoms, an oxidizing agent, an abrasive and water.
摘要翻译：本发明的目的在于提供一种抛光组合物，其能够同时防止凹陷和侵蚀，并且特别地保持金属膜的平坦度，同时能够同时与布线金属一起高速抛光阻挡膜和层间电介质膜。本发明的化学机械抛光组合物包括具有7至13个碳原子的二羧酸，氧化剂，研磨剂和水。

9. 发明申请

US20100267315A1 POLISHING COMPOSITION 有权
标题翻译：抛光组合物
公开(公告)号：US20100267315A1
公开(公告)日：2010-10-21
申请号：US12741177
申请日：2008-11-12
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
IPC分类号： B24B1/00 , C09K13/06 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.)
摘要翻译：本发明提供一种用于抛光铜或铜合金的抛光组合物，包括：氧化剂（A）; 至少一种选自氨基酸的酸（B），8个或更少碳原子的羧酸或无机酸; 具有8个或更多个碳原子的烷基的磺酸（C）; 具有8个以上碳原子的烷基的脂肪酸（D）和由以下通式（1）表示的N-取代咪唑（E）。（式（1）中，Ra，Rb，Rc表示H或碳原子数1〜4的烷基，Rd表示选自苄基，乙烯基，乙烯基， 1〜4个碳原子的基团，以及这些基团的一部分H被OH或NH 2取代的基团。

10. 发明申请

US20080087644A1 Polishing Composition And Polishing Method 有权
标题翻译：抛光组合和抛光方法
公开(公告)号：US20080087644A1
公开(公告)日：2008-04-17
申请号：US11794201
申请日：2006-01-24
申请人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
发明人： Ayako Nishioka , Yuji Itoh , Yoshitomo Shimazu
IPC分类号： C09K3/14 , C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： The present invention aims to provide a polishing composition which allows high-speed polishing of a barrier film and an inter-layer dielectric film along with a wiring metal at the same time, while preventing dishing and erosion, and particularly maintaining the flatness of metal film. The chemical-mechanical polishing composition of the present invention comprises a dicarboxylic acid having 7 to 13 carbon atoms, an oxidizing agent, an abrasive and water.
摘要翻译：本发明的目的在于提供一种抛光组合物，其能够同时防止凹陷和侵蚀，并且特别地保持金属膜的平坦度，同时能够同时与布线金属一起高速抛光阻挡膜和层间电介质膜。本发明的化学机械抛光组合物包括具有7至13个碳原子的二羧酸，氧化剂，研磨剂和水。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式