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    • 4. 发明授权
    • Solid-state image pickup device with discharge gate operable in an arbitrary timing
    • 具有放电门的固态图像拾取装置可在任意定时操作
    • US07053948B2
    • 2006-05-30
    • US09777314
    • 2001-02-05
    • Tomohiro Konishi
    • Tomohiro Konishi
    • H04N3/14H04N5/335
    • H01L27/14843H04N5/3456H04N5/3728
    • A solid-state image pickup device has a discharge gate and a discharge drain provided adjacent to a connection of a vertical CCD and a horizontal CCD so that charges accumulated for an arbitrary pixel can be completely depleted. Data can be read at an arbitrary decimation rate only by changing a drive condition of the discharge gate. An arbitrary decimation rate can be achieved and a frame rate, resolution or the like can easily changed while vertical transfer electrodes can keep the same wiring structure as in a still mode (normal reading) without making a complicated wiring structure of vertical transfer electrodes such as the prior art. Therefore, this solid-state image pickup device can achieve an arbitrary decimation rate and easily change a frame rate, resolution or the like only by changing drive conditions without making a complicated wiring structure of vertical transfer electrodes.
    • 固态摄像装置具有与垂直CCD和水平CCD的连接相邻设置的放电栅极和放电漏极,从而可以完全耗尽累积任意像素的电荷。 只有通过改变放电门的驱动条件,才能以任意的抽取率读取数据。 可以实现任意的抽取率,并且可以容易地改变帧率,分辨率等,而垂直传输电极可以保持与静止模式(正常读取)相同的布线结构,而不会形成垂直传输电极的复杂的布线结构,例如 现有技术 因此,该固体摄像装置可以通过改变驱动条件而不会产生垂直传输电极的复杂的布线结构,而能够实现任意的抽取率并容易地改变帧率,分辨率等。
    • 7. 发明授权
    • Solid-state image pickup device
    • 固态图像拾取装置
    • US07173298B2
    • 2007-02-06
    • US11065758
    • 2005-02-24
    • Tomohiro Konishi
    • Tomohiro Konishi
    • H01L31/062H01L31/113
    • H04N5/372H01L27/14812H04N5/3456
    • An imaging area is provided on a surface of a semiconductor substrate, and light-receiving portions and transfer channels are provided in the imaging area. A group of transfer electrodes extends in a direction crossing the transfer channels on the imaging area. A group of transfer signal lines, which are provided for every transfer signal of each phase along the periphery of the imaging area on the semiconductor substrate, is included. A transfer signal line connected to a transfer electrode having a large surface area on the transfer channel, of the group of the transfer electrodes, has an electrical resistance smaller than that of a transfer signal line connected to a transfer electrode having a small surface area on the transfer channel in the group of the transfer electrodes.
    • 在半导体衬底的表面上设置成像区域,并且在成像区域中设置有光接收部分和传送通道。 一组转移电极沿与成像区域上的输送通道交叉的方向延伸。 包括沿着半导体衬底上的成像区域的周边的每相的每个传送信号提供的一组传送信号线。 连接到转印电极组的传输通道上具有大的表面积的转印电极的转印信号线的电阻小于与表面积小的转印电极连接的转印信号线的电阻 转移电极组中的转移通道。
    • 8. 发明申请
    • Solid-state image pickup device
    • 固态图像拾取装置
    • US20060192203A1
    • 2006-08-31
    • US11065758
    • 2005-02-24
    • Tomohiro Konishi
    • Tomohiro Konishi
    • H01L29/04
    • H04N5/372H01L27/14812H04N5/3456
    • An imaging area is provided on a surface of a semiconductor substrate, and light-receiving portions and transfer channels are provided in the imaging area. A group of transfer electrodes extends in a direction crossing the transfer channels on the imaging area. A group of transfer signal lines, which are provided for every transfer signal of each phase along the periphery of the imaging area on the semiconductor substrate, is included. A transfer signal line connected to a transfer electrode having a large surface area on the transfer channel, of the group of the transfer electrodes, has an electrical resistance smaller than that of a transfer signal line connected to a transfer electrode having a small surface area on the transfer channel in the group of the transfer electrodes.
    • 在半导体衬底的表面上设置成像区域,并且在成像区域中设置有光接收部分和传送通道。 一组转移电极沿与成像区域上的输送通道交叉的方向延伸。 包括沿着半导体衬底上的成像区域的周边的每相的每个传送信号提供的一组传送信号线。 连接到转印电极组的传输通道上具有大的表面积的转印电极的转印信号线的电阻小于与表面积小的转印电极连接的转印信号线的电阻 转移电极组中的转移通道。