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1. 发明授权

US06479408B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06479408B2
公开(公告)日：2002-11-12
申请号：US09843725
申请日：2001-04-30
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/76801 , H01L21/76802 , H01L21/76834 , H01L21/76838
摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.
摘要翻译：本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。半导体器件制造方法包括从衬底21暴露的表面制备衬底21，并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤，其中层间绝缘膜由多包括与铜布线23接触的绝缘膜24的绝缘膜，绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成，该含氧气体选自由流动相等于或小于硅氧烷流量的N2O，H2O和CO2组成的组相互反应。

2. 发明授权

US06642157B2 Film forming method and semiconductor device 有权
标题翻译：成膜方法和半导体器件
公开(公告)号：US06642157B2
公开(公告)日：2003-11-04
申请号：US09742242
申请日：2000-12-22
申请人： Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
发明人： Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/02274 , C23C16/308 , C23C16/402 , H01L21/02126 , H01L21/02216 , H01L21/31116 , H01L21/3122 , H01L21/3145 , H01L21/31612 , H01L21/31695 , H01L21/76802
摘要： There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
摘要翻译：提供了通过使具有硅氧烷键的化合物和氧化气体通过等离子体反应而在衬底103上形成含有硅的绝缘膜204的成膜方法。

3. 发明授权

US06630412B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06630412B2
公开(公告)日：2003-10-07
申请号：US09897069
申请日：2001-07-03
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/308 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76834
摘要： In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

4. 发明授权

US06479409B2 Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent 有权
标题翻译：具有由没有氧化剂的等离子体形成的层间绝缘膜的半导体器件的制造
公开(公告)号：US06479409B2
公开(公告)日：2002-11-12
申请号：US09790568
申请日：2001-02-23
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto , Yuichiro Kotake , Shoji Ohgawara , Makoto Kurotobi
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto , Yuichiro Kotake , Shoji Ohgawara , Makoto Kurotobi
IPC分类号： H01L2131
CPC分类号： H01L21/02115 , C23C16/30 , C23C16/5096 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/31116 , H01L21/31633 , H01L21/76802 , H01L21/76829 , H01L21/76832 , H01L21/76837 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.
摘要翻译：公开了一种制造半导体器件的方法，其中通过涂覆布线形成具有低介电常数的层间绝缘膜，并且在层间绝缘膜中形成通孔或接触孔。制造具有形成在膜形成基板21上的层间绝缘膜25与暴露布线23的半导体器件的方法包括将仅含有Si，O，C和H的硅化合物转化成等离子体气体的步骤，使等离子体气体反应的成膜气体，从而在布线23和层间绝缘膜25之间形成含有硅（Si），氧（O），碳（C）和氢（H）的嵌段绝缘膜24。

5. 发明授权

US06673725B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06673725B2
公开(公告)日：2004-01-06
申请号：US09843726
申请日：2001-04-30
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/3122 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76832 , H01L21/76834
摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N2O, H2O, or CO2, ammonia (NH3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3).
摘要翻译：本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。低介电常数绝缘膜是通过含有N 2 O，H 2 O或CO 2的含氧气体，氨（NH 3）和至少一种具有硅氧烷键的烷基化合物的成膜气体的等离子体和甲基硅烷（SiHn（CH 3）4-n：n = 0,1,2,3）。

6. 发明授权

US06645883B2 Film forming method, semiconductor device and manufacturing method of the same 有权
标题翻译：成膜方法，半导体装置及其制造方法
公开(公告)号：US06645883B2
公开(公告)日：2003-11-11
申请号：US09863382
申请日：2001-05-24
申请人： Youichi Yamamoto , Hiroshi Ikakura , Tomomi Suzuki , Yuichiro Kotake , Yoshimi Shioya , Kouichi Ohira , Shoji Ohgawara , Kazuo Maeda
发明人： Youichi Yamamoto , Hiroshi Ikakura , Tomomi Suzuki , Yuichiro Kotake , Yoshimi Shioya , Kouichi Ohira , Shoji Ohgawara , Kazuo Maeda
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612
摘要： The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
摘要翻译：本发明公开了一种形成具有低介电常数的绝缘膜的成膜方法。该方法包括以下步骤：将惰性气体和氮气（N 2）的至少一种稀释气体添加到由硅氧烷和N 2 O组成的主要沉积气体组分中，将所得沉积气体转化成等离子体，引起等离子体中的反应，以及在用于成膜的基板上形成绝缘膜25,27或28。

7. 发明授权

US06911405B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06911405B2
公开(公告)日：2005-06-28
申请号：US09988685
申请日：2001-11-20
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Youichi Yamamoto , Yuichiro Kotake , Hiroshi Ikakura , Shoji Ohgawara
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Youichi Yamamoto , Yuichiro Kotake , Hiroshi Ikakura , Shoji Ohgawara
IPC分类号： H01L21/28 , H01L21/205 , H01L21/3105 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/3205 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L23/52 , H01L23/522 , H01L21/76 , H01L21/26 , H01L21/44
CPC分类号： H01L21/7685 , H01L21/3105 , H01L21/31116 , H01L21/3144 , H01L21/3185 , H01L21/321 , H01L21/32136 , H01L21/76826 , H01L21/76834 , H01L21/76838 , H01L21/76867 , H01L21/76886
摘要： A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.
摘要翻译：由N 2 N 2 N 2 O 2或其混合物之一组成的工艺气体被转化为等离子体，然后将铜布线层的表面暴露于等离子体的处理气体，由此将铜布线层的表面部分重整并制成铜扩散防止屏障。根据该方法，可以提供具有增加的操作速度和较少的铜扩散的贵金属半导体器件。

8. 发明授权

US06472334B2 Film forming method, semiconductor device manufacturing method, and semiconductor device 失效
标题翻译：成膜方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US06472334B2
公开(公告)日：2002-10-29
申请号：US09824106
申请日：2001-04-03
申请人： Hiroshi Ikakura , Tomomi Suzuki , Kazuo Maeda , Yoshimi Shioya , Kouichi Ohira
发明人： Hiroshi Ikakura , Tomomi Suzuki , Kazuo Maeda , Yoshimi Shioya , Kouichi Ohira
IPC分类号： H01L21469
CPC分类号： H01L21/02126 , C23C16/402 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612
摘要： There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.
摘要翻译：提供了通过使具有硅氧烷键的化合物和Si-R键（R为烷基）与含有氧化气体和H 2的质子化反应气体反应而在基板上形成含硅绝缘膜的方法。

9. 发明授权

US06649495B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06649495B2
公开(公告)日：2003-11-18
申请号：US10164709
申请日：2002-06-10
申请人： Yoshimi Shioya , Yuhko Nishimoto , Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda
发明人： Yoshimi Shioya , Yuhko Nishimoto , Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda
IPC分类号： H01L2120
CPC分类号： H01L21/76834 , C23C16/0272 , C23C16/401 , C23C16/5096 , H01L21/0214 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/76801 , H01L21/76807 , H01L2221/1036
摘要： The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film 35a on a substrate 21 subject to deposition, in which an electric power having a first frequency (f1) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film 35b having low relative dielectric constant on the barrier insulating film 35a, in which an electric power having a second frequency (f2) higher than the first frequency (f1) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.
摘要翻译：半导体器件的制造方法技术领域本发明涉及一种半导体器件的制造方法，其中，在主要由铜膜构成的布线被涂覆的同时依次形成具有低相对介电常数的阻挡绝缘膜和主绝缘膜。其结构包括以下步骤：在沉积的基板21上形成阻挡绝缘膜35a，其中具有第一频率（f1）的电力施加到至少含有含硅气体和氧气的第一成膜气体以将所述第一成膜气体转化为等离子体并引起反应; 并且在隔离绝缘膜35a上形成具有低相对介电常数的主绝缘膜35b，其中具有比第一频率（f1）高的第二频率（f2）的电力施加到至少包含至少含硅气体和含氧气体，以将第二成膜气体转化为等离子体并引起反应。

10. 发明授权

US06514855B1 Semiconductor device manufacturing method having a porous insulating film 失效
标题翻译：具有多孔绝缘膜的半导体器件制造方法
公开(公告)号：US06514855B1
公开(公告)日：2003-02-04
申请号：US09547852
申请日：2000-04-12
申请人： Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda , Yoshimi Shioya , Koichi Ohira
发明人： Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda , Yoshimi Shioya , Koichi Ohira
IPC分类号： H01L214763
CPC分类号： H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02321 , H01L21/02332 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3145 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76834
摘要： The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.
摘要翻译：本发明涉及在具有低介电常数的层间绝缘膜中形成通孔或接触孔的半导体器件制造方法。该方法包括在基板上形成含氮绝缘膜的步骤，在含氮绝缘膜上形成多孔绝缘膜，在下面的绝缘膜和多孔绝缘膜上形成开口，并形成含氮绝缘膜通过使这些表面与氨气，氮气和氮氧化物气体中的任一种的等离子体接触，在多孔绝缘膜的表面上和开口的表面上。

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