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    • 1. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US06479408B2
    • 2002-11-12
    • US09843725
    • 2001-04-30
    • Yoshimi ShioyaKouichi OhiraKazuo Maeda
    • Yoshimi ShioyaKouichi OhiraKazuo Maeda
    • H01L2131
    • H01L21/02126C23C16/30H01L21/02216H01L21/02274H01L21/3122H01L21/76801H01L21/76802H01L21/76834H01L21/76838
    • The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.
    • 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 半导体器件制造方法包括从衬底21暴露的表面制备衬底21,并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤,其中层间绝缘膜由多 包括与铜布线23接触的绝缘膜24的绝缘膜,绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成,该含氧气体选自 由流动相等于或小于硅氧烷流量的N2O,H2O和CO2组成的组相互反应。