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1. 发明申请

US20130022743A1 VAPOR GROWTH APPARATUS AND VAPOR GROWTH METHOD 审中-公开
标题翻译：蒸气生长装置和蒸汽生长方法
公开(公告)号：US20130022743A1
公开(公告)日：2013-01-24
申请号：US13551795
申请日：2012-07-18
申请人： Yoshikazu MORIYAMA , Yuusuke Sato
发明人： Yoshikazu MORIYAMA , Yuusuke Sato
IPC分类号： C23C16/52
CPC分类号： C23C16/4412 , C23C16/45557
摘要： A vapor growth apparatus according to an aspect of the present invention includes a reaction chamber into which a wafer is loaded, a first valve which is connected to the reaction chamber and controls a flow rate of a first exhaust gas discharged from the reaction chamber, a first pump which is provided on a downstream side of the first valve and discharges the first exhaust gas, a first pressure gauge which detects a first pressure that is a pressure of the reaction chamber, a first pressure control unit which controls the first valve based on the first pressure, a second pressure gauge which detects a second pressure that is a pressure between the first valve and the first pump, and a second pressure control unit which controls an operation volume of the first pump based on the first pressure and the second pressure.
摘要翻译：根据本发明的一个方面的气相生长装置包括：反应室，加载有晶片的反应室;与反应室连接并控制从反应室排出的第一废气的流量的第一阀，第一泵，其设置在第一阀的下游侧并排出第一废气，第一压力计，其检测作为反应室的压力的第一压力;第一压力控制单元，其基于第一压力，第二压力计，其检测作为第一阀和第一泵之间的压力的第二压力;以及第二压力控制单元，其基于第一压力和第二压力来控制第一泵的操作体积。

2. 发明申请

US20100021631A1 COATING APPARATUS AND COATING METHOD 有权
标题翻译：涂装和涂装方法
公开(公告)号：US20100021631A1
公开(公告)日：2010-01-28
申请号：US12508012
申请日：2009-07-23
申请人： Yoshikazu MORIYAMA , Kunihiko SUZUKI , Hironobu HIRATA
发明人： Yoshikazu MORIYAMA , Kunihiko SUZUKI , Hironobu HIRATA
IPC分类号： C23C16/52 , C23C16/00 , C23C16/44
CPC分类号： C23C16/45572 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/46 , C30B25/14 , C30B29/06
摘要： In a coating apparatus, a distributor plate 104 is disposed upstream of a silicon wafer 101 relative to the direction of flow of reactive gas. The distributor plate 104 has therein first through-holes 104a and second through-holes 104b arranged so as not to meet the first through-holes 104a. The reactive gas passes through the first through-holes 104a and flows down toward the silicon wafer 101. Further, a cooling gas passes through the second through-holes 104b.
摘要翻译：在涂布装置中，分配器板104相对于反应气体的流动方向设置在硅晶片101的上游。分配板104在其中具有布置成不与第一通孔104a相交的第一通孔104a和第二通孔104b。反应气体通过第一通孔104a并朝向硅晶片101向下流动。此外，冷却气体通过第二通孔104b。

3. 发明申请

US20090269490A1 COATING APPARATUS AND COATING METHOD 审中-公开
标题翻译：涂装和涂装方法
公开(公告)号：US20090269490A1
公开(公告)日：2009-10-29
申请号：US12425148
申请日：2009-04-16
申请人： Yoshikazu MORIYAMA , Hideaki NISHIKAWA , Masayoshi YAJIMA , Hiroshi FURUTANI , Shinichi MITANI , Michio NISHIBAYASHI
发明人： Yoshikazu MORIYAMA , Hideaki NISHIKAWA , Masayoshi YAJIMA , Hiroshi FURUTANI , Shinichi MITANI , Michio NISHIBAYASHI
IPC分类号： C23C16/44 , B05C11/00 , B05D3/12
CPC分类号： H01L21/68785 , C23C16/4412 , C23C16/4584 , C23C16/4586 , H01L21/67109 , H01L21/6838 , H01L21/68735
摘要： An object of the present invention is to provide a coating apparatus in which the substrate can be reliably rotated at high speed. Another object of the invention is to provide a coating method of forming a coating on a substrate while reliably rotating it at high speed. A coating apparatus includes a susceptor for supporting a silicon wafer, and a rotating portion for rotating the susceptor. The rotating portion is covered on top with the susceptor to form a P2 region. The contact surface of the susceptor with the silicon wafer has a plurality of holes therein. The silicon wafer is attached to the susceptor by evacuating gas from the P2 region.
摘要翻译：本发明的目的在于提供一种能够高速可靠地旋转基板的涂布装置。本发明的另一个目的是提供一种在可靠地高速旋转基板的同时在基板上形成涂层的涂布方法。涂覆装置包括用于支撑硅晶片的基座和用于旋转基座的旋转部分。旋转部分在顶部被基座覆盖以形成P2区域。具有硅晶片的基座的接触面在其中具有多个孔。通过从P2区域排出气体将硅晶片附接到基座。

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