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1. 发明授权

US07619292B2 Semiconductor integrated device having solid-state image sensor packaged within and production method for same 有权
标题翻译：具有固态图像传感器的半导体集成器件封装在其内部及其制造方法中
公开(公告)号：US07619292B2
公开(公告)日：2009-11-17
申请号：US12041530
申请日：2008-03-03
申请人： Yoshihiro Okada , Takahiko Ogo , Kaoru Sasaki
发明人： Yoshihiro Okada , Takahiko Ogo , Kaoru Sasaki
IPC分类号： H01L31/02
CPC分类号： H01L27/14683 , H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.
摘要翻译：半导体集成器件包括：遮光半导体集成器件的转印部分的至少一部分光的遮光膜; 形成在与所述遮光膜相同的层中的第一布线，其一端连接到焊盘电极，另一端延伸到所述半导体衬底的侧边缘; 布置成绕着半导体衬底的侧面并连接到第一布线的第二布线; 以及密封固态图像传感器的密封构件。

2. 发明申请

US20080203513A1 Semiconductor Integrated Device Having Solid-State Image Sensor Packaged Within and Production Method for Same 有权
标题翻译：封装固态图像传感器的半导体集成器件及其制作方法
公开(公告)号：US20080203513A1
公开(公告)日：2008-08-28
申请号：US12041530
申请日：2008-03-03
申请人： Yoshihiro Okada , Takahiko Ogo , Kaoru Sasaki
发明人： Yoshihiro Okada , Takahiko Ogo , Kaoru Sasaki
IPC分类号： H01L31/0224
CPC分类号： H01L27/14683 , H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.
摘要翻译：半导体集成器件包括：遮光半导体集成器件的转印部分的至少一部分光的遮光膜; 形成在与所述遮光膜相同的层中的第一布线，其一端连接到焊盘电极，另一端延伸到所述半导体基板的侧边缘; 布置成绕着半导体衬底的侧面并连接到第一布线的第二布线; 以及密封固态图像传感器的密封构件。

3. 发明申请

US20060022288A1 Semiconductor integrate device and method for manufacturing same 有权
标题翻译：半导体集成装置及其制造方法
公开(公告)号：US20060022288A1
公开(公告)日：2006-02-02
申请号：US10530095
申请日：2003-11-14
申请人： Yoshihiro Okada , Takahiko Ogo , Kaoru Sasaki
发明人： Yoshihiro Okada , Takahiko Ogo , Kaoru Sasaki
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： H01L27/14683 , H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.
摘要翻译：半导体集成器件包括：遮光半导体集成器件的转印部分的至少一部分光的遮光膜; 形成在与所述遮光膜相同的层中的第一布线，其一端连接到焊盘电极，另一端延伸到所述半导体基板的侧边缘; 布置成绕着半导体衬底的侧面并连接到第一布线的第二布线; 以及密封固态图像传感器的密封构件。

4. 发明授权

US07361525B2 Semiconductor integrated device having solid-state image sensor packaged within and production method for same 有权
标题翻译：具有固态图像传感器的半导体集成器件封装在其内部及其制造方法中
公开(公告)号：US07361525B2
公开(公告)日：2008-04-22
申请号：US10530095
申请日：2003-11-14
申请人： Yoshiro Okada , Takahiko Ogo , Kaoru Sasaki
发明人： Yoshiro Okada , Takahiko Ogo , Kaoru Sasaki
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.
摘要翻译：半导体集成器件包括：遮光半导体集成器件的转印部分的至少一部分光的遮光膜; 形成在与所述遮光膜相同的层中的第一布线，其一端连接到焊盘电极，另一端延伸到所述半导体基板的侧边缘; 布置成绕着半导体衬底的侧面并连接到第一布线的第二布线; 以及密封固态图像传感器的密封构件。

5. 发明申请

US20060028570A1 Solid state image capturing device and control method thereof 审中-公开
标题翻译：固体摄像装置及其控制方法
公开(公告)号：US20060028570A1
公开(公告)日：2006-02-09
申请号：US11190584
申请日：2005-07-27
申请人： Yoshihiro Okada , Shinichiro Izawa , Hideki Takahashi , Takashi Tanimoto , Takahiko Ogo
发明人： Yoshihiro Okada , Shinichiro Izawa , Hideki Takahashi , Takashi Tanimoto , Takahiko Ogo
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H04N5/347 , H04N5/3725
摘要： A solid state image capturing device comprises a vertical transfer section including a plurality of vertical shift registers which vertically transfer information charges generated in a plurality of light-receiving pixels arranged in a matrix form, and a horizontal transfer section including a horizontal shift register in which each bit thereof is coupled to each of the vertical shift registers of the vertical transfer section, wherein the information charges corresponding to a plurality of light-receiving pixels transferred by the horizontal shift register are added and then horizontally transferred. Thus, transfer time of the information charges during horizontal transfer can be reduced.
摘要翻译：固态图像捕获装置包括：垂直传输部分，包括垂直传输以矩阵形式布置的多个光接收像素中生成的信息电荷的多个垂直移位寄存器;以及水平传送部分，包括水平移位寄存器，其中其每一位耦合到垂直传送部分的每个垂直移位寄存器，其中对应于由水平移位寄存器传送的多个光接收像素的信息电荷被相加，然后水平传送。因此，可以减少在水平传送期间的信息费用的传送时间。

6. 发明申请

US20070224723A1 SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置及制造固态成像装置的方法
公开(公告)号：US20070224723A1
公开(公告)日：2007-09-27
申请号：US11754885
申请日：2007-05-29
申请人： Hidetaka Nishimura , Takahiko Ogo
发明人： Hidetaka Nishimura , Takahiko Ogo
IPC分类号： H01L21/00
CPC分类号： H01L27/14818 , H01L27/14806 , H01L27/14831
摘要： A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.
摘要翻译：一种固态成像装置及其制造方法，其防止光学图像的再现特性受到半导体衬底表面上的对角线光的影响。 CCD图像传感器包括半导体衬底，形成在半导体衬底上的受光像素和布置在光接收像素上方的滤色器，并且包括透射具有不同波长的光的滤光器。屏蔽穿过滤色器并与时钟导线电隔离的光的虚拟导线被布置在与限定一个光接收像素的区域边界对应的位置处。

7. 发明申请

US20060163620A1 Charge coupled device and solid-state imaging apparatus 有权
标题翻译：电荷耦合器件和固态成像设备
公开(公告)号：US20060163620A1
公开(公告)日：2006-07-27
申请号：US11334364
申请日：2006-01-19
申请人： Takahiko Ogo
发明人： Takahiko Ogo
IPC分类号： H01L27/148
CPC分类号： H01L27/14812 , H01L27/14636
摘要： When capacity coupling between an output gate electrode (OG) and a last-stage transfer electrode is large at an output end of a CCD shift register, an electric potential of the OG is varied according to transfer clocks with the result that noise is liable to generate in an output signal. As measures for this, convex portions projecting horizontally are formed in those positions of the last-stage transfer electrode and the OG, which correspond to a channel region, and overlap between the both electrodes is caused only on the portions. A clearance is formed between the OG and the transfer electrode except those locations, in which the convex portions are provided. In particular, in that location, in which the OG and the transfer electrode, respectively, are extended relatively lengthily toward wirings, the both electrodes do not overlap each other. In this manner, capacity coupling between the both electrodes is reduced.
摘要翻译：当在CCD移位寄存器的输出端输出栅电极（OG）和最后级转移电极之间的电容耦合较大时，OG的电位根据转移时钟而变化，结果是噪声易于在输出信号中产生。作为其措施，水平突出的凸部形成在与沟道区域相对应的最后级转移电极和OG的那些位置处，并且仅在这两个部分之间产生两个电极之间的重叠。除了设置有凸部的那些位置之外，在OG和转印电极之间形成间隙。特别地，在分别将OG和转移电极相对于配线相对长度延伸的位置中，两个电极彼此不重叠。以这种方式，减小了两个电极之间的电容耦合。

8. 发明申请

US20050185080A1 Solid state imaging device and method for manufacturing solid state imaging device 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20050185080A1
公开(公告)日：2005-08-25
申请号：US11064538
申请日：2005-02-23
申请人： Hidetaka Nishimura , Takahiko Ogo
发明人： Hidetaka Nishimura , Takahiko Ogo
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335
CPC分类号： H01L27/14818 , H01L27/14806 , H01L27/14831
摘要： A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.
摘要翻译：一种固态成像装置及其制造方法，其防止光学图像的再现特性受到半导体衬底表面上的对角线光的影响。 CCD图像传感器包括半导体衬底，形成在半导体衬底上的受光像素和布置在光接收像素上方的滤色器，并且包括透射具有不同波长的光的滤光器。屏蔽穿过滤色器并与时钟导线电隔离的光的虚拟导线被布置在与限定一个光接收像素的区域边界对应的位置处。

9. 发明授权

US07537957B2 Solid state imaging device and method for manufacturing solid state imaging device 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07537957B2
公开(公告)日：2009-05-26
申请号：US11754885
申请日：2007-05-29
申请人： Hidetaka Nishimura , Takahiko Ogo
发明人： Hidetaka Nishimura , Takahiko Ogo
IPC分类号： H01L21/00
CPC分类号： H01L27/14818 , H01L27/14806 , H01L27/14831
摘要： A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.
摘要翻译：一种固态成像装置及其制造方法，其防止光学图像的再现特性受到半导体衬底表面上的对角线光的影响。 CCD图像传感器包括半导体衬底，形成在半导体衬底上的受光像素和布置在光接收像素上方的滤色器，并且包括透射具有不同波长的光的滤光器。屏蔽穿过滤色器并与时钟导线电隔离的光的虚拟导线被布置在与限定一个光接收像素的区域边界对应的位置处。

10. 发明授权

US07244978B2 Solid state imaging device and method for manufacturing solid state imaging device 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07244978B2
公开(公告)日：2007-07-17
申请号：US11064538
申请日：2005-02-23
申请人： Hidetaka Nishimura , Takahiko Ogo
发明人： Hidetaka Nishimura , Takahiko Ogo
IPC分类号： H01L31/062
CPC分类号： H01L27/14818 , H01L27/14806 , H01L27/14831
摘要： A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.
摘要翻译：一种固态成像装置及其制造方法，其防止光学图像的再现特性受到半导体衬底表面上的对角线光的影响。 CCD图像传感器包括半导体衬底，形成在半导体衬底上的受光像素和布置在光接收像素上方的滤色器，并且包括透射具有不同波长的光的滤光器。屏蔽穿过滤色器并与时钟导线电隔离的光的虚拟导线被布置在与限定一个光接收像素的区域边界对应的位置处。

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