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1. 发明申请

US20100151043A1 PREPARATION FOR STERILIZATION OR DISINFECTION OF TISSUE 审中-公开
标题翻译：制剂灭菌或消毒组织
公开(公告)号：US20100151043A1
公开(公告)日：2010-06-17
申请号：US12518974
申请日：2007-12-10
申请人： Yoshihiro Mano , Shinichi Arakawa , Kaneo Chiba
发明人： Yoshihiro Mano , Shinichi Arakawa , Kaneo Chiba
IPC分类号： A61K33/00
CPC分类号： A61K33/40 , A01N59/00 , A61K9/0063 , A61K33/00 , A01N25/02 , A01N25/34 , A01N2300/00
摘要： The present invention relates to a preparation for sterilizing or disinfecting a tissue which has an excellent tissue sterilizing or disinfecting ability and is suitable for therapeutic or prophylactic treatment of various diseases caused by a microorganism such as a bacterium or a virus and a method for sterilizing or disinfecting a tissue. The present invention relates to a preparation for sterilizing or disinfecting a tissue and an agent for therapeutic or prophylactic treatment of a periodontal disease, characterized by containing a gas in a nanobubble state. Furthermore, the present invention relates to the above-mentioned preparation for sterilizing or disinfecting a tissue, characterized in that the above-mentioned gas in a nanobubble state is ozone. Furthermore, the present invention relates to a liquid preparation for sterilizing or disinfecting a tissue, characterized by comprising ozone-nanobubble water.
摘要翻译：本发明涉及一种具有优异的组织消毒或消毒能力的组织的消毒或消毒的制剂，适用于治疗或预防由细菌或病毒等微生物引起的各种疾病的治疗或预防性治疗，消毒组织。本发明涉及一种用于消毒或消毒组织的药剂和用于治疗或预防牙周病的药剂，其特征在于包含纳米气泡状态的气体。此外，本发明涉及上述用于对组织进行灭菌或消毒的制剂，其特征在于，上述的纳米气泡状态的气体是臭氧。此外，本发明涉及一种用于消毒或消毒组织的液体制剂，其特征在于包括臭氧 - 纳米气泡水。

2. 发明授权

US08691637B2 Solid-state image pickup device and method of manufacturing same 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08691637B2
公开(公告)日：2014-04-08
申请号：US13335030
申请日：2011-12-22
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H01L21/82
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L31/02 , H01L31/18
摘要： Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.
摘要翻译：本文公开了一种固态图像拾取装置，包括：光电转换部，被配置为将入射光转换成信号电荷; 传输晶体管，被配置为从光电转换部读取信号电荷并传送信号电荷; 以及放大晶体管，被配置为放大由所述转移晶体管读取的信号电荷，其中在所述放大晶体管上形成具有压缩应力的压缩应力膜。

3. 发明申请

US20060125100A1 Method of manufacturing semiconductor device, and semiconductor device 有权
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：US20060125100A1
公开(公告)日：2006-06-15
申请号：US11287532
申请日：2005-11-22
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H01L23/52
CPC分类号： H01L21/76886 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76834 , H01L21/76844 , H01L21/76847 , H01L21/76849 , H01L21/76864 , H01L21/76865 , H01L21/76868 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, comprising a first step of forming a layer insulation film on a lower layer wiring provided on a substrate and forming a connection hole in the layer insulation film, a second step of forming an alloy layer composed of a first metallic material constituting the lower layer wiring and a second metallic material different from the first metallic material, on the surface side of the lower layer wiring in the region to be a bottom portion of the connection hole, a third step of sputter-etching the alloy layer, and a fourth step of forming a via in the connection hole in the state of reaching the lower layer wiring; and the semiconductor device.
摘要翻译：一种制造半导体器件的方法，包括：在设置在基板上的下层布线上形成层间绝缘膜并在层间绝缘膜形成连接孔的第一工序;形成由第一构成下层布线的金属材料和与第一金属材料不同的第二金属材料，在作为连接孔底部的区域中的下层布线的表面侧，溅射蚀刻合金的第三步骤以及在到达下层布线的状态下在连接孔中形成通孔的第四步骤; 和半导体器件。

4. 发明授权

US09077186B2 Power supply device 有权
标题翻译：电源设备
公开(公告)号：US09077186B2
公开(公告)日：2015-07-07
申请号：US13455880
申请日：2012-04-25
申请人： Shinichi Arakawa , Yasumichi Ohnuki
发明人： Shinichi Arakawa , Yasumichi Ohnuki
IPC分类号： H02J7/00 , H01M10/42 , H01M10/46 , H01M10/48 , H01M2/34 , G01R31/36
CPC分类号： H02J7/0016 , G01R31/3658 , H01M2/34 , H01M10/4207 , H01M10/425 , H01M10/46 , H01M10/482 , H01M2010/4271 , H02J7/0031 , Y10T307/696
摘要： A power supply device includes a plurality of power supply units connected in parallel, and includes a positive electrode-side junction formed by the joining of positive electrode-side terminals of the plurality of power supply units and a negative electrode-side junction formed by the joining of negative electrode-side terminals of the plurality of power supply units. Each of the plurality of power supply units includes a battery unit, and a first relay that is provided between one of the positive and negative electrode-side junctions and the battery unit and is electrically disconnectably connected in series to the battery unit. Each of the plurality of power supply units includes a resistive element of which one end is connected between the first relay, which is connected to one of a positive electrode terminal and a negative electrode terminal of the battery unit, and the battery unit.
摘要翻译：电源装置包括并联连接的多个电源单元，并且包括通过多个电源单元的正极侧端子的接合而形成的正极侧接点和由多个电源单元的负极侧端子的接合。多个电源单元中的每一个包括电池单元和设置在正极和负极侧接合部中的一个与电池单元之间并与电池单元电连接地串联连接的第一继电器。多个电源单元中的每一个包括电阻元件，其一端连接在连接到电池单元的正极端子和负极端子中的一个的第一继电器和电池单元之间。

5. 发明授权

US08120684B2 Solid-state image pickup device and method of manufacturing same 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08120684B2
公开(公告)日：2012-02-21
申请号：US12372857
申请日：2009-02-18
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H04N3/14
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L31/02 , H01L31/18
摘要： Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.
摘要翻译：本文公开了一种固态图像拾取装置，包括：光电转换部，被配置为将入射光转换成信号电荷; 转移晶体管，被配置为从光电转换部读取信号电荷并传送信号电荷; 以及放大晶体管，被配置为放大由所述转移晶体管读取的信号电荷，其中在所述放大晶体管上形成具有压缩应力的压缩应力膜。

6. 发明授权

US08035230B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08035230B2
公开(公告)日：2011-10-11
申请号：US11561590
申请日：2006-11-20
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , H01L21/76808 , H01L21/76831 , H01L21/76834 , H01L21/76849 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76877 , H01L21/76886 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： This invention discloses a semiconductor device including an insulating film having a recess therein; an electric conductor formed inside the recess; a manganese silicate film formed on an upper surface of the conductor, the manganese silicate film being formed of a reaction product of a manganese with a silicon oxide insulating film. A method for manufacturing such a semiconductor device is also described.
摘要翻译：本发明公开了一种半导体器件，包括其中具有凹槽的绝缘膜; 形成在凹部内的电导体; 形成在导体的上表面上的硅酸锰膜，所述硅酸锰膜由锰与氧化硅绝缘膜的反应产物形成。还描述了制造这种半导体器件的方法。

7. 发明申请

US20090225209A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：US20090225209A1
公开(公告)日：2009-09-10
申请号：US12372857
申请日：2009-02-18
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L31/02 , H01L31/18
摘要： Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.
摘要翻译：本文公开了一种固态图像拾取装置，包括：光电转换部，被配置为将入射光转换成信号电荷; 转移晶体管，被配置为从光电转换部读取信号电荷并传送信号电荷; 以及放大晶体管，被配置为放大由所述转移晶体管读取的信号电荷，其中在所述放大晶体管上形成具有压缩应力的压缩应力膜。

8. 发明授权

US07416974B2 Method of manufacturing semiconductor device, and semiconductor device 有权
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：US07416974B2
公开(公告)日：2008-08-26
申请号：US11287532
申请日：2005-11-22
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76886 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76834 , H01L21/76844 , H01L21/76847 , H01L21/76849 , H01L21/76864 , H01L21/76865 , H01L21/76868 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, comprising a first step of forming a layer insulation film on a lower layer wiring provided on a substrate and forming a connection hole in the layer insulation film, a second step of forming an alloy layer composed of a first metallic material constituting the lower layer wiring and a second metallic material different from the first metallic material, on the surface side of the lower layer wiring in the region to be a bottom portion of the connection hole, a third step of sputter-etching the alloy layer, and a fourth step of forming a via in the connection hole in the state of reaching the lower layer wiring; and the semiconductor device.
摘要翻译：一种制造半导体器件的方法，包括：在设置在基板上的下层布线上形成层间绝缘膜并在层间绝缘膜形成连接孔的第一工序;形成由第一构成下层布线的金属材料和与第一金属材料不同的第二金属材料，在作为连接孔底部的区域中的下层布线的表面侧，溅射蚀刻合金的第三步骤以及在到达下层布线的状态下在连接孔中形成通孔的第四步骤; 和半导体器件。

9. 发明申请

US20080081468A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080081468A1
公开(公告)日：2008-04-03
申请号：US11858516
申请日：2007-09-20
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H01L21/44
CPC分类号： H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76831 , H01L21/76835
摘要： A method of manufacturing a semiconductor device includes the steps of: forming recesses (a via hole and wiring grooves) in a insulation film; forming a seal layer on inside surfaces of the recesses by using a gas based on a silane having an alkyl group as a precursor; applying EB-cure or UV-cure to the seal layer; and filling up the recesses with a conductor.
摘要翻译：制造半导体器件的方法包括以下步骤：在绝缘膜中形成凹槽（通孔和布线槽）; 通过使用基于具有烷基的硅烷作为前体的气体在凹部的内表面上形成密封层; 对密封层施加EB固化或UV固化; 并用导体填充凹槽。

10. 发明申请

US20120115270A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：US20120115270A1
公开(公告)日：2012-05-10
申请号：US13335030
申请日：2011-12-22
申请人： Shinichi Arakawa
发明人： Shinichi Arakawa
IPC分类号： H01L31/18
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L31/02 , H01L31/18
摘要： Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.
摘要翻译：本文公开了一种固态图像拾取装置，包括：光电转换部，被配置为将入射光转换成信号电荷; 转移晶体管，被配置为从光电转换部读取信号电荷并传送信号电荷; 以及放大晶体管，被配置为放大由所述转移晶体管读取的信号电荷，其中在所述放大晶体管上形成具有压缩应力的压缩应力膜。

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