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    • 3. 发明授权
    • Surface acoustic wave device and communication device
    • 声表面波装置及通讯装置
    • US06847154B2
    • 2005-01-25
    • US10255968
    • 2002-09-27
    • Yoshihiro ItoMichio KadotaKoji Fujimoto
    • Yoshihiro ItoMichio KadotaKoji Fujimoto
    • H03H9/145H03H9/02H03H9/25H03H9/64
    • H03H9/14552H03H9/02543H03H9/6496
    • A Shear Horizontal-type end-surface-reflection-type surface acoustic wave device includes a piezoelectric substrate having end surfaces. The most appropriate positions of the end surfaces of the piezoelectric substrate are determined. Interdigital transducers are disposed on the main surface of the piezoelectric substrate having a comparatively low relative dielectric constant ∈11T (for example, a relative dielectric constant of about 40 or less). The positions of the end surfaces are determined so that the distance from the center of the second electrode finger, counting from the outermost side in the surface acoustic wave propagation direction among the interdigital transducers, to the end surfaces (end surfaces for reflecting the surface acoustic wave) of the piezoelectric substrate satisfy the relationship (N+⅝)λs≦L≦(N+⅞)λs, where λs is the wavelength of the surface acoustic wave, and N is 0 or a positive integer.
    • 剪切水平型端面反射型表面声波装置包括具有端面的压电基板。 确定压电基片的端面最合适的位置。 叉指换能器设置在压电基片的相对介电常数ε11(例如相对介电常数约为40或更小)的主表面上。 端面的位置被确定为使得从叉指式换能器之间的表面声波传播方向上的最外侧的第二电极指的中心到端面(用于反射表面声学的端面) (N + 5/8)lambdas <= L <=(N + 7/8)lambdas,其中lambdas是表面声波的波长,N是0或正整数 。
    • 5. 发明授权
    • Image forming apparatus
    • 图像形成装置
    • US08731418B2
    • 2014-05-20
    • US13300350
    • 2011-11-18
    • Kazuhiro HosoharaYoshihiro Ito
    • Kazuhiro HosoharaYoshihiro Ito
    • G03G15/00
    • G03G15/5054G03G15/0131G03G15/0194G03G21/1633G03G2215/0132G03G2221/1684
    • An image forming apparatus includes a rotatable belt, a detection unit configured to detect, at a detecting position, an object on the belt, a cartridge that is attachable to and detachable from a main body of the apparatus independently of the belt, and an openable and closable member that is openable and closable relative to the body to attach and detach the cartridge to and from the body. When the detection unit is at the detecting position, at least a part of the detection unit is located in a space used for attachment and detachment of the cartridge, and, when the detection unit is at a retracted position, which is outside of a space used for attachment and detachment of the cartridge, at least a part of the detection unit is located in a space that is formed by opening the openable and closable member relative to the body.
    • 图像形成装置包括可旋转的皮带,检测单元,其被配置为在检测位置处检测皮带上的物体,独立于皮带可附接到装置的主体并且可拆卸的卡盒,以及可打开的 以及相对于所述主体可开启和关闭的可关闭构件,以将所述盒与身体相连和分离。 当检测单元处于检测位置时,检测单元的至少一部分位于用于盒的安装和拆卸的空间中,并且当检测单元处于位于空间外的缩回位置时 用于盒的附接和拆卸,所述检测单元的至少一部分位于通过相对于所述主体打开所述可打开和可关闭构件而形成的空间中。
    • 6. 发明授权
    • Ultraviolet sensor
    • 紫外线传感器
    • US08372681B2
    • 2013-02-12
    • US13569422
    • 2012-08-08
    • Kazutaka NakamuraYoshihiro Ito
    • Kazutaka NakamuraYoshihiro Ito
    • H01L21/00
    • H01L31/109H01L31/18
    • A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.
    • 一种二极管型紫外线传感器,具有层叠结构体,其包括由具有导电性的烧结陶瓷体构成的导电层和由包含ZnO的氧化物半导体构成的半导体层。 半导体层设置在导电层的主表面上并与导电层形成异质结。 紫外线传感器在半导体层位于受紫外线照射的受光面的状态下使用。 半导体层优选由烧结体构成。 用作导电层的烧结体和用作半导体层的烧结体优选通过共烧成形。 端子电极分别设置在分层结构体的主表面和另一个主表面上。