专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110233510A1 NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件
公开(公告)号：US20110233510A1
公开(公告)日：2011-09-29
申请号：US13132058
申请日：2009-12-01
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103); a second electrode (109); and a resistance variable layer (106) disposed between the first electrode and the second electrode, resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the first electrode and the second electrode; at least one of the first electrode and the second electrode including a platinum-containing layer (107) comprising platinum; the resistance variable layer including at least a first oxygen-deficient transition metal oxide layer (104) which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer (105) which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer; x
摘要翻译：本发明的非易失性存储元件包括第一电极（103）第二电极（109）; 以及设置在所述第一电极和所述第二电极之间的电阻变化层（106），所述电阻变化层的电阻值响应于施加在所述第一电极和所述第二电极之间的电信号而可逆地变化; 所述第一电极和所述第二电极中的至少一个包括含铂的含铂层（107）所述电阻变化层至少包括不与所述含铂层物理接触的第一缺氧过渡金属氧化物层（104）和第二缺氧过渡金属氧化物层（105），所述第二缺氧过渡金属氧化物层（105）设置在所述第一氧缺陷型过渡金属氧化物层和含铂层，并且与含铂层物理接触; 当第一缺氧过渡金属氧化物层中包含的缺氧过渡金属氧化物被表示为MOx时，x

2. 发明申请

US20100207094A1 NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储器元件和非易失性存储器元件的非线性半导体器件
公开(公告)号：US20100207094A1
公开(公告)日：2010-08-19
申请号：US12682676
申请日：2008-03-31
申请人： Yoshihiko Kanzawa , Shunsaku Muraoka , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
发明人： Yoshihiko Kanzawa , Shunsaku Muraoka , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
IPC分类号： H01L45/00 , H01L27/08
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (503); a second electrode (505); and a resistance variable layer (504) which is disposed between the first electrode (503) and the second electrode (505), a resistance value of the resistance variable layer being changeable in response to electric signals which are applied between the first electrode (503) and the second electrode (505), wherein the first electrode and the second electrode comprise materials which are made of different elements.
摘要翻译：本发明的非易失性存储元件包括第一电极（503）; 第二电极（505）; 以及设置在第一电极（503）和第二电极（505）之间的电阻变化层（504），电阻变化层的电阻值根据施加在第一电极（503）和第二电极）和第二电极（505），其中第一电极和第二电极包括由不同元件制成的材料。

3. 发明授权

US08179713B2 Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device 有权
标题翻译：非易失性存储元件，非易失性存储器件和非易失性半导体器件
公开(公告)号：US08179713B2
公开(公告)日：2012-05-15
申请号：US12671162
申请日：2009-05-18
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) which is provided between the first electrode and the second electrode, and is configured to reversibly switch an interelectrode resistance value which is a resistance value between the first electrode and the second electrode, in response to an interelectrode voltage which is an electric potential of the second electrode on the basis of the first electrode, the resistance variable layer includes an oxygen-deficient transition metal oxide, the first electrode side and the second electrode side have an asymmetric structure, a portion of the resistance variable layer which is located at the first electrode side and a portion of the resistance variable layer which is located at the second electrode side are each configured to be selectively placed into one of a low-resistance state and a high-resistance state, so as to attain a stable state in three or more different interelectrode resistance values, the stable state being a state in which the interelectrode resistance value is invariable regardless of a change in the interelectrode voltage within a specified range.
摘要翻译：非易失性存储元件包括设置在第一电极和第二电极之间的第一电极（103），第二电极（105）和电阻变化层（104），并且被配置为可逆地切换电极间电阻值，是第一电极和第二电极之间的电阻值，响应于基于第一电极的第二电极的电位的电极间电压，电阻变化层包括缺氧过渡金属氧化物，第一电极侧和第二电极侧具有不对称结构，位于第一电极侧的电阻变化层的一部分和位于第二电极侧的电阻变化层的一部分分别构成为选择性地放置成低电阻状态和高电阻状态之一，以达到三个或更多个差异的稳定状态出现电极间电阻值，稳定状态是不管电极间电压在规定范围内的变化如何，电极间电阻值不变的状态。

4. 发明授权

US08445885B2 Nonvolatile memory element having a thin platinum containing electrode 有权
标题翻译：具有薄铂电极的非易失性存储元件
公开(公告)号：US08445885B2
公开(公告)日：2013-05-21
申请号：US13132058
申请日：2009-12-01
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element includes first and second electrodes, and a resistance variable layer disposed therebetween. At least one of the first and second electrodes includes a platinum-containing layer. The resistance variable layer includes a first oxygen-deficient transition metal oxide layer which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer. When oxygen-deficient transition metal oxides included in the first and second oxygen-deficient transition metal oxide layers are expressed as MOx, and MOy, respectively, x
摘要翻译：非易失性存储元件包括第一和第二电极以及设置在它们之间的电阻变化层。第一和第二电极中的至少一个包括含铂层。电阻变化层包括不与含铂层物理接触的第一缺氧过渡金属氧化物层和设置在第一缺氧过渡金属氧化物层和第二缺氧过渡金属氧化物层之间的第二缺氧过渡金属氧化物层所述含铂层并且与所述含铂层物理接触。包含在第一和第二缺氧过渡金属氧化物层中的缺氧过渡金属氧化物分别表示为MOx，MOy分别表示为x

5. 发明授权

US08338816B2 Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element 有权
标题翻译：非易失性存储元件和使用非易失性存储元件的非易失性半导体器件
公开(公告)号：US08338816B2
公开(公告)日：2012-12-25
申请号：US12682676
申请日：2008-03-31
申请人： Yoshihiko Kanzawa , Shunsaku Muraoka , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
发明人： Yoshihiko Kanzawa , Shunsaku Muraoka , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
IPC分类号： H01L47/00 , H01L29/02 , H01L29/66
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (503); a second electrode (505); and a resistance variable layer (504) which is disposed between the first electrode (503) and the second electrode (505), a resistance value of the resistance variable layer being changeable in response to electric signals which are applied between the first electrode (503) and the second electrode (505), wherein the first electrode and the second electrode comprise materials which are made of different elements.
摘要翻译：本发明的非易失性存储元件包括第一电极（503）; 第二电极（505）; 以及设置在第一电极（503）和第二电极（505）之间的电阻变化层（504），电阻变化层的电阻值根据施加在第一电极（503）和第二电极）和第二电极（505），其中第一电极和第二电极包括由不同元件制成的材料。

6. 发明申请

US20100259966A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND NONVOLATILE SEMICONDUCTOR APPARATUS 有权
标题翻译：非易失性存储元件，非易失性存储器件和非易失性半导体器件
公开(公告)号：US20100259966A1
公开(公告)日：2010-10-14
申请号：US12671162
申请日：2009-05-18
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L27/101 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) which is provided between the first electrode and the second electrode, and is configured to reversibly switch an interelectrode resistance value which is a resistance value between the first electrode and the second electrode, in response to an interelectrode voltage which is an electric potential of the second electrode on the basis of the first electrode, the resistance variable layer includes an oxygen-deficient transition metal oxide, the first electrode side and the second electrode side have an asymmetric structure, a portion of the resistance variable layer which is located at the first electrode side and a portion of the resistance variable layer which is located at the second electrode side are each configured to be selectively placed into one of a low-resistance state and a high-resistance state, so as to attain a stable state in three or more different interelectrode resistance values, the stable state being a state in which the interelectrode resistance value is invariable regardless of a change in the interelectrode voltage within a specified range.
摘要翻译：非易失性存储元件包括设置在第一电极和第二电极之间的第一电极（103），第二电极（105）和电阻变化层（104），并且被配置为可逆地切换电极间电阻值，是第一电极和第二电极之间的电阻值，响应于基于第一电极的第二电极的电位的电极间电压，电阻变化层包括缺氧过渡金属氧化物，第一电极侧和第二电极侧具有不对称结构，位于第一电极侧的电阻变化层的一部分和位于第二电极侧的电阻变化层的一部分分别构成为选择性地放置成低电阻状态和高电阻状态之一，以达到三个或更多个差异的稳定状态出现电极间电阻值，稳定状态是不管电极间电压在规定范围内的变化如何，电极间电阻值不变的状态。

7. 发明申请

US20100188884A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY ELEMENT 审中-公开
标题翻译：非易失性存储器元件，非易失性存储器件以及将数据写入非易失性存储器元件的方法
公开(公告)号：US20100188884A1
公开(公告)日：2010-07-29
申请号：US12667856
申请日：2009-04-13
申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Zhiqiang Wei , Takeshi Takagi
发明人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Zhiqiang Wei , Takeshi Takagi
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element comprises a first electrode (503), a second electrode (505), and a resistance variable layer (504) disposed between the first electrode and the second electrode, a resistance value between the first electrode and the second electrode being switchable reversibly in response to positive and negative electric signals applied between the first electrode and the second electrode; wherein the resistance variable layer includes an oxygen-deficient hafnium oxide; wherein the first electrode and the second electrode comprise elements which are different from each other; and wherein a standard electrode potential V1 of an element forming the first electrode, a standard electrode potential V2 of an element forming the second electrode and a standard electrode potential V0 of hafnium satisfy a relationship of V1
摘要翻译：非易失性存储元件包括第一电极（503），第二电极（505）和设置在第一电极和第二电极之间的电阻变化层（504），第一电极和第二电极之间的电阻值可切换响应于施加在第一电极和第二电极之间的正和负电信号而可逆地反转; 其中所述电阻变化层包括缺氧氧化铪; 其中所述第一电极和所述第二电极包括彼此不同的元件; 并且其中形成第一电极的元件的标准电极电位V1，形成第二电极的元件的标准电极电位V2和铪的标准电极电位V0满足V1

8. 发明授权

US08553446B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element 有权
标题翻译：非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
公开(公告)号：US08553446B2
公开(公告)日：2013-10-08
申请号：US13567646
申请日：2012-08-06
申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
发明人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8
摘要翻译：本发明的非易失性存储元件包括第一电极（103），第二电极（108）介于第一电极（103）和第二电极（107）之间的电阻变化层（107），其被配置为响应于施加在电极（103）和（108）之间的电信号可逆地切换电阻值，，并且电阻变化层（107）具有至少多层结构，其中具有表示为HfO x（0.9 @ x @ 1.6）的组成的第一含铪层和具有表达的组成的第二含铪层因为HfOy（1.8

9. 发明授权

US08264865B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element 有权
标题翻译：非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
公开(公告)号：US08264865B2
公开(公告)日：2012-09-11
申请号：US12677404
申请日：2009-07-01
申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
发明人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8
摘要翻译：本发明的非易失性存储元件包括第一电极（103），第二电极（108）介于第一电极（103）和第二电极（107）之间的电阻变化层（107），其被配置为响应于施加在电极（103）和（108）之间的电信号可逆地切换电阻值，，并且电阻变化层（107）具有至少多层结构，其中具有表示为HfO x（0.9＆nlE; x＆nlE; 1.6）的组成的第一含铪层和具有组成的第二含铪层表示为HfOy（1.8

10. 发明申请

US20110294259A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件
公开(公告)号：US20110294259A1
公开(公告)日：2011-12-01
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L21/36
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式