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1. 发明授权

US5153758A Driving method and apparatus for a pnpn semiconductor device 失效
标题翻译：用于PNPN半导体器件的驱动方法和装置
公开(公告)号：US5153758A
公开(公告)日：1992-10-06
申请号：US692850
申请日：1991-04-29
申请人： Yoshiharu Tashiro , Kenichi Kasahara , Takahiro Numai
发明人： Yoshiharu Tashiro , Kenichi Kasahara , Takahiro Numai
IPC分类号： H01L33/00 , H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/22 , H01S5/40
CPC分类号： H01S5/0608 , H01L33/0016 , H01S5/06203 , H01S5/0028 , H01S5/042 , H01S5/22 , H01S5/40
摘要： A driving method for a pnpn semiconductor device includes the steps of applying a voltage higher than a holding voltage of the pnpn semiconductor device to an anode electrode thereof, supplying a control signal light to the pnpn semiconductor device to set the pnpn semiconductor device into an ON state, and supplying an information signal light to the pnpn semiconductor device to emit an output light. The control signal light and the information signal light are time-sequentially supplied to the pnpn semiconductor device under the voltage applied thereto. An apparatus for carrying out the driving method includes a light information transmission input line that is branched into a plurality of lines, where a light detection circuit is coupled to at least one of the lines. A synchronous driving circuit applies voltage to the pnpn semiconductor device which is coupled to one of the other lines of the information transmission input line. The pnpn semiconductor device is driven by receiving light from the input line when the light detection circuit detects an address of the pnpn semiconductor device included in a light supplied from the light information transmission input line.

2. 发明授权

US5065044A Method for driving a pnpn semiconductor device 失效
标题翻译：驱动PNPN半导体器件的方法
公开(公告)号：US5065044A
公开(公告)日：1991-11-12
申请号：US426303
申请日：1989-10-24
申请人： Kenichi Kasahara , Ichiro Ogura , Yoshiharu Tashiro
发明人： Kenichi Kasahara , Ichiro Ogura , Yoshiharu Tashiro
IPC分类号： G02F1/015 , G02F3/02 , G11C11/39 , H01L29/74 , H01L31/111 , H03K17/78 , H03K19/14
CPC分类号： G11C11/39 , Y10S359/90
摘要： At least one electric pulse having a predetermined voltage which is higher than a switching voltage for a pnpn semiconductor device and a predetermined width is applied across the pnpn semiconductor device. The electric pulse width is set not to turn the pnpn semiconductor device on. Consequently, a predetermined amount of carriers are accumulated in the pnpn semiconductor device. In this circumstance, a trigger light is supplied to the pnpn semiconductor device to be turned on. As a result, an energy of the trigger light is largely decreased as compared to a conventional method.

3. 发明授权

US5059788A Optical logic device with PNPN detection and laser diode output 失效
标题翻译：具有PNPN检测和激光二极管输出的光学逻辑器件
公开(公告)号：US5059788A
公开(公告)日：1991-10-22
申请号：US489990
申请日：1990-03-07
申请人： Yoshiharu Tashiro , Kenichi Kasahara
发明人： Yoshiharu Tashiro , Kenichi Kasahara
IPC分类号： G02F3/00 , H03K19/14
CPC分类号： H03K19/14
摘要： A laser diode and an optical switching device are connected in parallel relative to a power supply. The optical switching device is turned on by receiving an input light, and stores the ON state, so that the laser device is turned off. As a result, an electric power consumption is decreased, the structure is simplified, and the adjustment becomes easy.
摘要翻译：激光二极管和光开关器件相对于电源并联连接。通过接收输入光来接通光学开关装置，并且存储导通状态，使得激光装置关闭。结果，电力消耗减少，结构简化，调整变得容易。

4. 发明授权

US5093875A Optical interconnection apparatus 失效
标题翻译：光学互连装置
公开(公告)号：US5093875A
公开(公告)日：1992-03-03
申请号：US578973
申请日：1990-09-07
申请人： Ichiro Ogura , Yoshiharu Tashiro , Kenichi Kasahara , Shigeru Kawai
发明人： Ichiro Ogura , Yoshiharu Tashiro , Kenichi Kasahara , Shigeru Kawai
IPC分类号： G01J1/44 , G06E3/00 , G06F15/18 , G06N3/02 , G06N99/00 , H04Q3/52
CPC分类号： H01L33/0016 , G06E3/00 , H01L33/0004
摘要： A matrix of optical functional devices are divided into plural device units. Each of the device units includes at least two optical functional devices having light transmitting coatings. The coatings have transmission factors which are different from each other. Light signals emitted through the coatings from the at least two optical functional devices in each unit are received by a corresponding light receiving device among light receiving devices arranged in a one-dimensional pattern. In each device unit optical functional devices to be driven are selected, so that a coupling degree between each device unit and the corresponding light receiving device is changed.
摘要翻译：光功能器件的矩阵被分成多个器件单元。每个设备单元包括具有透光涂层的至少两个光学功能器件。涂层具有彼此不同的传输因子。通过来自每个单元中的至少两个光学功能器件的涂层发射的光信号由在一维图案中布置的光接收装置中的对应的光接收装置接收。在每个设备单元中，选择要驱动的光功能器件，使得每个器件单元和相应的光接收器件之间的耦合度改变。

5. 发明授权

US5084748A Semiconductor optical memory having a low switching voltage 失效
标题翻译：具有低开关电压的半导体光学存储器
公开(公告)号：US5084748A
公开(公告)日：1992-01-28
申请号：US676476
申请日：1991-03-27
申请人： Kenichi Kasahara , Ichiro Ogura , Yoshiharu Tashiro , Mitsunori Sugimoto
发明人： Kenichi Kasahara , Ichiro Ogura , Yoshiharu Tashiro , Mitsunori Sugimoto
IPC分类号： G11C11/42 , H01L27/06 , H01L27/10 , H01L27/144
CPC分类号： H01L27/1443 , H01L27/0605
摘要： A semiconductor optical memory includes a gate layer composed of a p- first semiconductor layer, a p- or n- second semiconductor layer, and an n- third semiconductor layer provided between a cathode layer and an anode layer. Where the second layer is of n- type, an impurity concentration of the n- second semiconductor layer is lower than an impurity concentration of the n- third semiconductor layer, and a bandgap eneray of the n- third semiconductor layer is lower than bandgap energies of the cathode and anode layers. Where the second layer is of p- type, an impurity concentration of the p- second semiconductor layer is lower than an impurity concentration of the p- first semiconductor layer, and a bandgap energy of the p- first semiconductor layer is lower than bandgap energies of the cathode and anode layers. As a result, a response speed becomes as fast as several 100 Mb/s.
摘要翻译：半导体光学存储器包括由p-第一半导体层，p-或n-第二半导体层构成的栅极层以及设置在阴极层和阳极层之间的第三 - 第三半导体层。在第二层为n型的情况下，第n半导体层的杂质浓度低于第n-n半导体层的杂质浓度，并且n - 第3半导体层的带隙能量低于带隙能量的阴极和阳极层。在第二层为p型的情况下，p型第二半导体层的杂质浓度低于p型第一半导体层的杂质浓度，p型第一半导体层的带隙能量低于带隙能量的阴极和阳极层。结果，响应速度变成几百兆比特/秒。

6. 发明授权

US5028969A Semiconductor device for a space modulation matrix and method for driving a space modulation matrix 失效
标题翻译：用于空间调制矩阵的半导体器件和用于驱动空间调制矩阵的方法
公开(公告)号：US5028969A
公开(公告)日：1991-07-02
申请号：US406472
申请日：1989-09-13
申请人： Kenichi Kasahara , Yoshiharu Tashiro , Mitsunori Sugimoto , Keiichi Kubota , Shigeru Kawai , Ichiro Ogura
发明人： Kenichi Kasahara , Yoshiharu Tashiro , Mitsunori Sugimoto , Keiichi Kubota , Shigeru Kawai , Ichiro Ogura
IPC分类号： G02F1/015 , G02F1/017 , G02F1/31 , G06N3/063 , G06N3/067 , G11C7/00
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/31 , G06N3/063 , G06N3/0675 , G11C7/005 , G02F1/015 , G02F2203/12
摘要： A space modulation matrix is composed of semiconductor transmittivity modulation elements arranged in a matrix pattern. A transmittivity of the transmittivity modulation elements is changed by supplying a light or applying a voltage greater than a switching voltage of the transmittivity modulation elements to a selected number of the transmittivity modulation elements, so that a space modulation is provided on the space modulation matrix, and is renewed by any number of times.
摘要翻译：空间调制矩阵由以矩阵图案排列的半导体透射率调制元件组成。通过向选定数量的透射率调制元件供给光或施加大于透射率调制元件的开关电压的电压来改变透射率调制元件的透射率，从而在空间调制矩阵上提供空间调制，并重新任意多次。

7. 发明授权

US4910571A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US4910571A
公开(公告)日：1990-03-20
申请号：US184565
申请日：1988-04-21
申请人： Kenichi Kasahara , Yoshiharu Tashiro
发明人： Kenichi Kasahara , Yoshiharu Tashiro
IPC分类号： G11C7/00 , G11C11/39 , H01L31/12 , H01L33/00
CPC分类号： H01L33/0025 , G11C11/39 , G11C7/005 , H01L31/125
摘要： An optical semiconductor device comprises cathode and anode regions, and a gate region having a forbidden band gap narrower than those of the cathode and anode regions. The gate region is sandwiched by the cathode and anode regions. The optical semiconductor device further comprises a plurality of windows for receiving and radiating lights so that the alignment of light axes can be easily performed for a plurality of input and output lights.

8. 发明授权

US4864168A Process for controlling an optical pnpn thyristor to be driven 失效
标题翻译：用于控制要驱动的光学pnpn晶闸管的工艺
公开(公告)号：US4864168A
公开(公告)日：1989-09-05
申请号：US223600
申请日：1988-07-25
申请人： Kenichi Kasahara , Yoshiharu Tashiro
发明人： Kenichi Kasahara , Yoshiharu Tashiro
IPC分类号： G02F3/00 , G02F1/015 , G02F3/02 , G11C7/00 , G11C11/39 , G11C11/42 , H01L29/74 , H01L31/12 , H03K17/78 , H03K19/14
CPC分类号： H01L33/0016 , G11C11/39 , G11C7/005 , H01L31/125
摘要： A process for controlling an optical pnpn thyristor to be driven comprises a step of applying a train of pulses to maintain a low impedance state of an optical pnpn thyristor which is shifted beforehand to be in the low impedance state by a positive set pulse. Each of the train of pulses is less than in its level than the positive set pulse. When light emission is required for the reading of an information, a positive set pulse is applied to the optical pnpn thyristor. As a result, electric power consumption is reduced during a time storing the information.

9. 发明授权

US5394423A Surface emitting semiconductor laser 失效
标题翻译：表面发射半导体激光器
公开(公告)号：US5394423A
公开(公告)日：1995-02-28
申请号：US186649
申请日：1994-01-26
申请人： Kenichi Kasahara
发明人： Kenichi Kasahara
IPC分类号： H01S5/00 , H01S5/06 , H01S5/183 , H01S5/22 , H01S5/227 , H01S5/32 , H01S3/19
CPC分类号： H01S5/18355 , H01S2301/176 , H01S5/18341 , H01S5/18347 , H01S5/1835 , H01S5/18352 , H01S5/3201
摘要： A first insulation film is provided on the x axis side surfaces of a mesa on a substrate of a surface emitting semiconductor laser, and a second insulation film is provided on the y axis side surfaces of the mesa. The x and y axes are orthogonal to each other. The first and second insulation films are formed at different temperatures, so that stress applied to an active layer is different between the x and y axis directions. Consequently, the polarization of an output light is controlled to be on a selected axis from the x and y axis directions.
摘要翻译：第一绝缘膜设置在表面发射半导体激光器的基板的台面的x轴侧表面上，并且在台面的y轴侧表面上设置第二绝缘膜。 x和y轴彼此正交。在不同的温度下形成第一和第二绝缘膜，使得施加到有源层的应力在x和y轴方向之间是不同的。因此，输出光的偏振从x轴方向和y轴方向控制在选定的轴上。

10. 发明申请

US20050207608A1 Gasket for speaker 审中-公开
标题翻译：扬声器垫圈
公开(公告)号：US20050207608A1
公开(公告)日：2005-09-22
申请号：US11081590
申请日：2005-03-17
申请人： Hiroyuki Kobayashi , Kenichi Kasahara , Shinichi Hayasaka , Toshihiro Hikichi
发明人： Hiroyuki Kobayashi , Kenichi Kasahara , Shinichi Hayasaka , Toshihiro Hikichi
IPC分类号： H04R1/02 , H04R1/00 , H04R7/22 , H04R25/00
CPC分类号： H04R7/22
摘要： A speaker gasket formed in a required shape out of elastic materials such as rubber has a plurality of bolt-through holes formed at regular intervals. The speaker gasket is formed with varying thicknesses, for example, in a such manner that the central portion in the width direction is formed with thickness greater or smaller than that of the portions on either side of the central portion; a plurality of recesses are formed; or the surfaces of the speaker gasket has a sawtooth waveform in the width direction.
摘要翻译：由诸如橡胶的弹性材料形成为所需形状的扬声器垫圈具有以规则间隔形成的多个螺栓穿孔。扬声器垫圈形成为具有变化的厚度，例如以宽度方向的中心部分形成的厚度大于或小于中心部分两侧的部分的厚度; 形成多个凹部; 或者扬声器垫圈的表面在宽度方向上具有锯齿波形。

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