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    • 6. 发明申请
    • BATTERY DEVICE AND ELECTRONIC APPARATUS
    • 电池设备和电子设备
    • US20080057355A1
    • 2008-03-06
    • US11842548
    • 2007-08-21
    • Yoshiharu AJIKI
    • Yoshiharu AJIKI
    • H01M14/00H01L31/04
    • H01M14/005H01G9/2031H01G9/2059H01G9/2068Y02E10/542Y02P70/521
    • A battery device includes a photoelectric conversion device and a secondary battery. The photoelectric conversion device includes a first positive electrode, a first negative electrode, and a photoelectric conversion layer provided between the first positive electrode and the first negative electrode, the photoelectric conversion layer including an inorganic semiconductor and a pigment. The secondary battery includes a second positive electrode, a second negative electrode, and an electrolyte layer provided between the second positive electrode and the second negative electrode. Here, one of a first electrode pair and a second electrode pair is adhered directly, the first electrode pair including the first and the second positive electrodes, and the second electrode pair including the first and the second negative electrodes.
    • 电池装置包括光电转换装置和二次电池。 光电转换装置包括第一正极,第一负极和设置在第一正极和第一负极之间的光电转换层,光电转换层包括无机半导体和颜料。 二次电池包括第二正极,第二负极和设置在第二正极和第二负极之间的电解质层。 这里,第一电极对和第二电极对中的一个直接粘附,第一电极对包括第一和第二正极,第二电极对包括第一和第二负极。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND BOOSTER CIRCUIT
    • 半导体器件和升压电路
    • US20060290413A1
    • 2006-12-28
    • US11426153
    • 2006-06-23
    • Yoshiharu AJIKI
    • Yoshiharu AJIKI
    • G05F1/10
    • H02M3/07
    • A semiconductor device, comprises: a semiconductor substrate; a buried oxide (BOX) layer formed on the semiconductor substrate; a semiconductor layer formed on the BOX layer; a plurality of metal oxide semiconductor (MOS) capacitors formed on the semiconductor layer; and a switching element formed on the semiconductor substrate, wherein the switching element switches a first condition in which the plurality of MOS capacitors are connected parallel so that a direct current voltage is applied in common to the plurality of MOS capacitors, and a second condition in which the plurality of MOS capacitors connected parallel is connected in series.
    • 一种半导体器件,包括:半导体衬底; 形成在半导体衬底上的掩埋氧化物(BOX)层; 形成在BOX层上的半导体层; 形成在所述半导体层上的多个金属氧化物半导体(MOS)电容器; 以及形成在所述半导体基板上的开关元件,其中,所述开关元件切换所述多个MOS电容并联连接的第一状态,使得向所述多个MOS电容器共同施加直流电压,并且将第二状态 并联连接的多个MOS电容器串联连接。