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1. 发明授权

US08309960B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08309960B2
公开(公告)日：2012-11-13
申请号：US12702900
申请日：2010-02-09
申请人： Yoshiaki Toyota , Mieko Matsumura , Masatoshi Wakagi
发明人： Yoshiaki Toyota , Mieko Matsumura , Masatoshi Wakagi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1214 , H01L29/04 , H01L29/42384 , H01L29/78618
摘要： A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film.
摘要翻译：显示装置包括形成在其上形成有显示区域的基板上的多个薄膜晶体管。多个薄膜晶体管中的至少一个包括形成为覆盖栅电极的栅电极，玛瑙绝缘膜，形成在栅极绝缘膜的上表面上的层间绝缘膜，并且具有形成在在平面图中形成栅极电极，一对重掺杂半导体膜布置在层间绝缘膜的上表面上，其间插入有开口，多个半导体膜形成在该开口两边形成在该区域中，多晶半导体膜电连接到一对重掺杂半导体膜，以及一对电极，分别与一对重掺杂半导体膜重叠，而不与多晶半导体膜重叠。

2. 发明申请

US20100200858A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100200858A1
公开(公告)日：2010-08-12
申请号：US12702900
申请日：2010-02-09
申请人： Yoshiaki Toyota , Mieko Matsumura , Masatoshi Wakagi
发明人： Yoshiaki Toyota , Mieko Matsumura , Masatoshi Wakagi
IPC分类号： H01L33/16 , H01L33/08 , H01L27/15
CPC分类号： H01L27/1214 , H01L29/04 , H01L29/42384 , H01L29/78618
摘要： A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film.
摘要翻译：显示装置包括形成在其上形成有显示区域的基板上的多个薄膜晶体管。多个薄膜晶体管中的至少一个包括形成为覆盖栅电极的栅电极，玛瑙绝缘膜，形成在栅极绝缘膜的上表面上的层间绝缘膜，并且具有形成在在平面图中形成栅极电极，一对重掺杂半导体膜布置在层间绝缘膜的上表面上，其间插入有开口，多个半导体膜形成在该开口两边形成在该区域中，多晶半导体膜电连接到一对重掺杂半导体膜，以及一对电极，分别与一对重掺杂半导体膜重叠，而不与多晶半导体膜重叠。

3. 发明授权

US08344382B2 Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device 失效
标题翻译：半导体装置及其制造方法以及使用该半导体装置的显示装置
公开(公告)号：US08344382B2
公开(公告)日：2013-01-01
申请号：US13001428
申请日：2009-06-26
申请人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
发明人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L27/1277 , H01L27/1281 , H01L27/3262 , H01L29/66742 , H01L29/78687
摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.
摘要翻译：提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边通过蚀刻去除。此后，使用半导体晶体核作为晶种形成第二半导体膜。

4. 发明申请

US20110108841A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件及其制造方法以及使用半导体器件的显示器件
公开(公告)号：US20110108841A1
公开(公告)日：2011-05-12
申请号：US13001428
申请日：2009-06-26
申请人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
发明人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L27/1277 , H01L27/1281 , H01L27/3262 , H01L29/66742 , H01L29/78687
摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.
摘要翻译：提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边通过蚀刻去除。此后，使用半导体晶体核作为晶种形成第二半导体膜。

5. 发明申请

US20090146930A1 ORGANIC ELECTRO-LUMINESCENT DISPLAY APPARATUS 失效
标题翻译：有机电致发光显示装置
公开(公告)号：US20090146930A1
公开(公告)日：2009-06-11
申请号：US12275414
申请日：2008-11-21
申请人： Etsuko NISHIMURA , Masatoshi Wakagi , Kenichi Onisawa , Mieko Matsumura
发明人： Etsuko NISHIMURA , Masatoshi Wakagi , Kenichi Onisawa , Mieko Matsumura
IPC分类号： G09G3/30
CPC分类号： H01L27/3262 , H01L27/3276 , H01L2227/323
摘要： Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.
摘要翻译：用于驱动以矩阵状配置排列的多个像素中的每一个的每个TFT使用交错型多晶硅TFT来构成。与形成多晶硅膜形成时的耐高温材料的高电阻材料相比，形成沟道的多晶Si层的栅电极配置在下层 TFT。与多晶硅层相比，由低电阻材料构成的栅极线设置在上层。栅电极和栅极线通过在栅极绝缘膜中钻孔的通孔彼此连接。每个有机电致发光元件的各个配置组件在线形成时被部分地共同使用，从而抑制了步骤，处理和配置组件的增加。

6. 发明授权

US08093585B2 Organic electro-luminescent display apparatus 失效
标题翻译：有机电致发光显示装置
公开(公告)号：US08093585B2
公开(公告)日：2012-01-10
申请号：US12275414
申请日：2008-11-21
申请人： Etsuko Nishimura , Masatoshi Wakagi , Kenichi Onisawa , Mieko Matsumura
发明人： Etsuko Nishimura , Masatoshi Wakagi , Kenichi Onisawa , Mieko Matsumura
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L27/3262 , H01L27/3276 , H01L2227/323
摘要： Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.
摘要翻译：用于驱动以矩阵状配置排列的多个像素中的每一个的每个TFT使用交错型多晶硅TFT来构成。与形成多晶硅膜形成时的耐高温材料的高电阻材料相比，形成沟道的多晶Si层的栅电极配置在下层 TFT。与多晶硅层相比，由低电阻材料构成的栅极线设置在上层。栅电极和栅极线通过在栅极绝缘膜中钻孔的通孔彼此连接。每个有机电致发光元件的各个配置组件在线形成时被部分地共同使用，从而抑制了步骤，处理和配置组件的增加。

7. 发明授权

US08482003B2 Image display unit 有权
标题翻译：图像显示单元
公开(公告)号：US08482003B2
公开(公告)日：2013-07-09
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.
摘要翻译：提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。

8. 发明授权

US08258024B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08258024B2
公开(公告)日：2012-09-04
申请号：US12606284
申请日：2009-10-27
申请人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
发明人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

9. 发明授权

US07550772B2 Image display device and manufacturing method thereof 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07550772B2
公开(公告)日：2009-06-23
申请号：US11741272
申请日：2007-04-27
申请人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
发明人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L29/4908 , H01L2227/323
摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要翻译：提供了一种降低成本的图像显示装置。多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。

10. 发明申请

US20080093602A1 IMAGE DISPLAY UNIT AND METHOD FOR MANUFACUTRE THE SAME 有权
标题翻译：图像显示单元及其制造方法
公开(公告)号：US20080093602A1
公开(公告)日：2008-04-24
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L33/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： The present invention provides an image display unit, which can be manufactured in shorter time by designing a thin-film transistor, by which it is possible to reduce the number of processes of ion implantation and photolithographic processes. A gate electrode GT is designed in a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT, and a top electrode of a storage capacitor Cst is designed to have only the bottom layer metal film GMB. Ion implanter for the bottom electrode of the storage capacitor Cst is passed through the thin bottom layer metal film GMB, and ion implantation is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of PMOSTFT has also only the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist. By designing the thin-film transistor and the storage capacitor in such structure, one process each can be reduced in the photolithographic process and in the ion implantation process, and an active matrix substrate for an image display unit can be manufactured in shorter time and at lower cost.
摘要翻译：本发明提供了一种图像显示单元，其可以通过设计薄膜晶体管在较短时间内制造，由此可以减少离子注入和光刻工艺的处理次数。栅电极GT被设计成薄底层金属膜GMB和顶层金属膜GMT的层叠结构，并且存储电容器Cst的顶电极被设计为仅具有底层金属膜GMB。用于存储电容器Cst的底部电极的离子注入机通过薄的底层金属膜GMB，并且在与源极 - 漏极电极的离子注入同时进行离子注入。 PMOSTFT的栅极也仅具有底层金属GMB，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。通过在这种结构中设计薄膜晶体管和存储电容器，可以在光刻工艺和离子注入工艺中减少一个工艺，并且可以在更短的时间和更短的时间内制造用于图像显示单元的有源矩阵基板降低成本。

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