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    • 9. 发明授权
    • DCDC converter, semiconductor device, and power generation device
    • DCDC转换器,半导体器件和发电装置
    • US09362820B2
    • 2016-06-07
    • US13239515
    • 2011-09-22
    • Yoshiaki ItoKei Takahashi
    • Yoshiaki ItoKei Takahashi
    • G05F1/00H02M3/156
    • H02M3/156
    • A DCDC converter includes a control circuit, a transistor in which switching is controlled by being supplied voltage output from the control circuit to a gate electrode of the transistor, a voltage conversion portion in which supply of input voltage is controlled by the switching of the transistor and output power commensurate with duty ratio of the switching of the transistor, and a detection circuit detecting the output power. Further, the control circuit includes a control signal generation circuit generating a control signal with a pulse voltage waveform and a selection circuit applying voltage of the control signal to the gate electrode in the case where current detected by the detection circuit is the same as or exceeds the threshold value and applying voltage for turning on the transistor to the gate electrode in the case where the current detected by the detection circuit falls below the threshold value.
    • DCDC转换器包括控制电路,通过从控制电路向晶体管的栅电极输出的电压来控制开关的晶体管,通过晶体管的开关来控制输入电压的供给的电压转换部分 以及与晶体管的开关的占空比相当的输出功率,以及检测输出功率的检测电路。 此外,控制电路包括控制信号产生电路,在由检测电路检测到的电流相同或超过的情况下,产生具有脉冲电压波形的控制信号和选择电路将施加控制信号的电压施加到栅电极 在由检测电路检测到的电流低于阈值的情况下,将阈值和用于将晶体管接通至栅电极的施加电压。
    • 10. 发明授权
    • DC-DC converter and manufacturing method thereof
    • DC-DC转换器及其制造方法
    • US09224757B2
    • 2015-12-29
    • US13307084
    • 2011-11-30
    • Kei TakahashiYoshiaki Ito
    • Kei TakahashiYoshiaki Ito
    • G05F1/569H01L27/12H02M3/158H02M3/335H02M1/00
    • H01L27/1225H01L27/1251H02M3/158H02M3/33523H02M2001/0006
    • A DC-DC converter is driven by single high input voltage, and includes a voltage converter circuit and a control circuit. The increase of the occupied area of the DC-DC converter is suppressed. The DC-DC converter includes an input terminal to which input voltage is applied; a voltage converter circuit connected to the input terminal, and including a first transistor; a control circuit configured to control the voltage converter circuit, and including a second transistor including a silicon material in a channel formation region; and a third transistor provided between the input terminal and the control circuit, and configured to convert the input voltage into power supply voltage that is lower than the input voltage. The first transistor and the third transistor include an oxide semiconductor material in channel formation regions. The first transistor and the third transistor are stacked over the second transistor with an insulating film provided therebetween.
    • DC-DC转换器由单个高输入电压驱动,并且包括电压转换器电路和控制电路。 DC-DC转换器的占用面积的增加被抑制。 DC-DC转换器包括施加输入电压的输入端子; 连接到所述输入端子的电压转换器电路,并且包括第一晶体管; 控制电路,被配置为控制所述电压转换器电路,并且包括在沟道形成区域中包括硅材料的第二晶体管; 以及第三晶体管,其设置在所述输入端子和所述控制电路之间,并且被配置为将所述输入电压转换为低于所述输入电压的电源电压。 第一晶体管和第三晶体管包括沟道形成区域中的氧化物半导体材料。 第一晶体管和第三晶体管堆叠在第二晶体管上,其间设置有绝缘膜。