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1. 发明授权

US08203193B2 Magnetic random access memory and manufacturing method of the same 有权
标题翻译：磁性随机存取存储器及其制造方法相同
公开(公告)号：US08203193B2
公开(公告)日：2012-06-19
申请号：US13163349
申请日：2011-06-17
申请人： Takeshi Kajiyama , Yoshiaki Asao , Akihiro Nitayama
发明人： Takeshi Kajiyama , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L29/82 , G11C11/00 , G11C11/14
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228
摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.
摘要翻译：磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻。

2. 发明申请

US20110248365A1 MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20110248365A1
公开(公告)日：2011-10-13
申请号：US13163349
申请日：2011-06-17
申请人： Takeshi KAJIYAMA , Yoshiaki Asao , Akihiro Nitayama
发明人： Takeshi KAJIYAMA , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228
摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.
摘要翻译：磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻。

3. 发明申请

US20070091673A1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US20070091673A1
公开(公告)日：2007-04-26
申请号：US11313847
申请日：2005-12-22
申请人： Yoshiaki Asao , Akihiro Nitayama
发明人： Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A semiconductor memory device includes a memory cell block including a plurality of memory cells connected in series between first node and second node, the memory cells including a magnetoresistive element and a switching transistor, which are connected in parallel, the magnetoresistive element being a spin injection type and including a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction changes, and a non-magnetic layer interposed between the fixed layer and the recording layer, a bit line connected to the first node via a selection transistor, a word line connected to a gate of the switching transistor, and a write line connected to the second node.
摘要翻译：半导体存储器件包括存储单元块，其包括串联连接在第一节点和第二节点之间的多个存储器单元，存储单元包括并联连接的磁阻元件和开关晶体管，磁阻元件是自旋注入并且包括其磁化方向固定的固定层，其磁化方向改变的记录层和介于固定层和记录层之间的非磁性层，经由选择晶体管连接到第一结点的位线，连接到开关晶体管的栅极的字线和连接到第二节点的写入线。

4. 发明授权

US07920412B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US07920412B2
公开(公告)日：2011-04-05
申请号：US12605072
申请日：2009-10-23
申请人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
发明人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
摘要翻译：磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接连接磁阻效应元件和第一触点。

5. 发明申请

US20070187801A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070187801A1
公开(公告)日：2007-08-16
申请号：US11397726
申请日：2006-04-05
申请人： Yoshiaki Asao , Akihiro Nitayama
发明人： Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L29/12 , H01L31/117
CPC分类号： H01L45/144 , H01L27/2436 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1286
摘要： A semiconductor device comprising a semiconductor substrate, a switching element which is provided on the semiconductor substrate, a first interconnect layer which is provided above the semiconductor substrate, a plurality of phase-change memory devices which have phase-change material whose resistance changes by a phase-change due to a temperature change, being stacked, and being connected in series to the first interconnect layer and the switching element, a plurality of first heating elements which are connected in series to the respective phase-change memory devices, and a plurality of second heating elements which are connected to second interconnect layers different from the first interconnect layer, and which are provided so as to correspond to the respective phase-change memory devices.
摘要翻译：一种半导体器件，包括半导体衬底，设置在所述半导体衬底上的开关元件，设置在所述半导体衬底上方的第一互连层，具有相变材料的多个相变存储器件，所述相变材料的电阻改变为由于温度变化引起的相变，被堆叠并串联连接到第一互连层和开关元件，多个第一加热元件串联连接到各个相变存储器件，以及多个第二加热元件连接到与第一互连层不同的第二互连层，并且被设置为对应于各个相变存储器件。

6. 发明授权

US07706175B2 Magnetic random access memory and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US07706175B2
公开(公告)日：2010-04-27
申请号：US11839265
申请日：2007-08-15
申请人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
发明人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
摘要翻译：磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接连接磁阻效应元件和第一触点。

7. 发明申请

US20100047930A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20100047930A1
公开(公告)日：2010-02-25
申请号：US12605072
申请日：2009-10-23
申请人： Keiji HOSOTANI , Yoshiaki Asao , Akihiro Nitayama
发明人： Keiji HOSOTANI , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
摘要翻译：磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接连接磁阻效应元件和第一触点。

8. 发明授权

US07414879B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07414879B2
公开(公告)日：2008-08-19
申请号：US11313847
申请日：2005-12-22
申请人： Yoshiaki Asao , Akihiro Nitayama
发明人： Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A semiconductor memory device includes a memory cell block including a plurality of memory cells connected in series between first node and second node, the memory cells including a magnetoresistive element and a switching transistor, which are connected in parallel, the magnetoresistive element being a spin injection type and including a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction changes, and a non-magnetic layer interposed between the fixed layer and the recording layer, a bit line connected to the first node via a selection transistor, a word line connected to a gate of the switching transistor, and a write line connected to the second node.
摘要翻译：半导体存储器件包括存储单元块，其包括串联连接在第一节点和第二节点之间的多个存储器单元，存储单元包括并联连接的磁阻元件和开关晶体管，磁阻元件是自旋注入并且包括其磁化方向固定的固定层，其磁化方向改变的记录层和介于固定层和记录层之间的非磁性层，经由选择晶体管连接到第一结点的位线，连接到开关晶体管的栅极的字线和连接到第二节点的写入线。

9. 发明申请

US20080135958A1 MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20080135958A1
公开(公告)日：2008-06-12
申请号：US11943112
申请日：2007-11-20
申请人： Takeshi KAJIYAMA , Yoshiaki Asao , Akihiro Nitayama
发明人： Takeshi KAJIYAMA , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228
摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.
摘要翻译：磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻。

10. 发明申请

US20080080233A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20080080233A1
公开(公告)日：2008-04-03
申请号：US11839265
申请日：2007-08-15
申请人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
发明人： Keiji Hosotani , Yoshiaki Asao , Akihiro Nitayama
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： H01L27/228 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
摘要翻译：磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接连接磁阻效应元件和第一触点。

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